Bonded structures

Patent metadata

Field	Value
Publication number	US-11670615-B2
Application number	US-202017131588-A
Country	US
Kind code	B2
Filing date	Dec 22, 2020
Priority date	Dec 21, 2016
Publication date	Jun 6, 2023
Grant date	Jun 6, 2023

Abstract

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

First claim

What is claimed is:

1. A bonded structure comprising:
a first semiconductor element including first conductive features and first non-conductive features;
a second semiconductor element including second conductive features and second non-conductive features, the second semiconductor element comprising an integrated device, the first semiconductor element directly bonded to the second semiconductor element such that the first conductive features are directly bonded to corresponding second conductive features without an intervening adhesive layer and the first non-conductive features are directly bonded to corresponding second non-conductive features without an intervening adhesive; and
a crack stopper extending vertically through a portion of the second semiconductor element, the crack stopper including alternating wider and narrower segments.

2. The bonded structure of claim 1 , wherein the crack stopper is in contact with at least one of the second conductive features.

3. The bonded structure of claim 2 , wherein the first and second conductive features form an effectively closed profile around the integrated device, the effectively closed profile substantially sealing an interior region of the bonded structure including the integrated device from gas diffusion.

4. The bonded structure of claim 3 , wherein the first and second conductive features define a closed shape continuously surrounding the interior region.

5. The bonded structure of claim 1 , wherein the crack stopper extends around a perimeter of the second semiconductor element.

6. The bonded structure of claim 1 , wherein the second semiconductor element comprises a back-end-of-line interconnect structure that has a low K dielectric material, and wherein the crack stopper is formed within the low K dielectric material of the back-end-of-line interconnect structures.

7. The bonded structure of claim 1 , wherein the crack stopper comprises separate vertical segments formed of multiple metallization levels and connected to form a continuous vertical feature surrounding a central region of the second semiconductor element.

8. The bonded structure of claim 1 , wherein the first conductive features of the first semiconductor element further comprise a first closed annular conductive feature extending continuously around the integrated device.

9. The bonded structure of claim 8 , wherein the first closed annular conductive feature is directly bonded to a second closed annular conductive feature of the second semiconductor element without an intervening adhesive to form a directly bonded annular conductive feature.

10. The bonded structure of claim 8 , wherein the first semiconductor element comprises a plurality of first closed annular conductive features extending continuously around the integrated device.

11. The bonded structure of claim 1 , wherein the first and second conductive features include electrical interconnects to provide electrical connection between the first and second semiconductor elements.

12. The bonded structure of claim 1 , wherein the crack stopper is positioned around a perimeter of the second semiconductor element.

13. The bonded structure of claim 1 , wherein the crack stopper is positioned laterally between the integrated device and a side edge of the semiconductor element.

14. A bonded structure comprising:
a first semiconductor element including a first non-conductive feature, at least one first conductive feature extending vertically at least partially into the first non-conductive feature, and a first electrical component in an interior region of the bonded structure, the at least one first conductive feature including a conductive feature, the conductive feature of the at least one first conductive feature comprising an effectively closed profile around the first electrical component;
a second semiconductor element including a second non-conductive feature, and at least one second conductive feature extending vertically at least partially into the second non-conductive feature; and
a crack stopper extending vertically through a portion of the second semiconductor element, the crack stopper including alternating wider and narrower segments,
wherein the first semiconductor element is bonded to the second semiconductor element such that the at least one first conductive feature is bonded to the at least one second conductive feature and the first non-conductive feature is bonded to the second non-conductive feature; and
wherein a first electrical interconnect of the first semiconductor element and a second electrical interconnect of the second semiconductor element are bonded to one another within the interior region, the first and second electrical interconnects providing electrical connection between the first electrical component and the second semiconductor element.

15. The bonded structure of claim 14 , wherein the second semiconductor element comprises back-end-of-line interconnect structures, and the crack stopper extends vertically from the at least one second conductive feature through the back-end-of-line interconnect structures of the second semiconductor element.

16. The bonded structure of claim 15 , wherein the crack stopper extends around a perimeter of the second semiconductor element.

17. The bonded structure of claim 16 , wherein the first and second conductive features define a closed shape continuously surrounding the interior region.

18. The bonded structure of claim 14 , wherein the first semiconductor element comprises a first bonding layer including the at least one first conductive feature and the first non-conductive feature, and the second semiconductor element comprises a second bonding layer including the at least one second conductive feature and the second non-conductive feature.

19. The bonded structure of claim 18 , wherein the first and second bonding layers comprise nitrogen terminations at a bonding interface.

20. The bonded structure of claim 19 , wherein the first and second non-conductive features of the first and second bonding layers comprise silicon oxide, and the at least one first and second conductive features of the first and second bonding layers comprise metal.

21. The bonded structure of claim 14 , wherein the at least one first conductive feature comprises a plurality of laterally spaced apart first conductive feature portions with at least a portion of the first non-conductive feature disposed therebetween, and the at least one second conductive feature comprises a plurality of laterally spaced apart second conductive feature portions with at least a portion of the second non-conductive feature disposed therebetween.

22. The bonded structure of claim 14 , wherein:
the at least one first conductive feature is directly bonded to the at least one second conductive feature without an intervening adhesive and the first non-conductive feature is directly bonded to the second non-conductive feature without an intervening adhesive; and
the first electrical interconnect of the first semiconductor element and the second electrical interconnect of the second semiconductor element are directly bonded to one another within the interior region without an intervening adhesive.

23. The bonded structure of claim 14 , wherein the crack stopper is positioned so as to reduce cracking at an edge of the second semiconductor element.

Assignees

• Adeia Semiconductor Bonding Technologies Inc

Inventors

• Wang Liang
• Katkar Rajesh
• Delacruz Javier A
• Sitaram Arkalgud R

Classifications

• H10W90/794

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W80/701

  characterised by the pads after the direct bonding · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/037

  by mechanical treatment, e.g. by cutting, pressing or stamping · CPC title