Single crystal production apparatus

Patent metadata

Field	Value
Publication number	US-2018251908-A1
Application number	US-201815866952-A
Country	US
Kind code	A1
Filing date	Jan 10, 2018
Priority date	Mar 2, 2017
Publication date	Sep 6, 2018
Grant date	—

Abstract

To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

First claim

What is claimed is:

1 . A single crystal production apparatus for producing a single crystal of a metal oxide in an oxidative atmosphere, comprising: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater,
the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

2 . The single crystal production apparatus according to claim 1 , wherein the heater contains a Pt—Rh alloy.

3 . The single crystal production apparatus according to claim 2 , wherein the heater contains a Pt—Rh alloy having a Rh content of from 10 to 30 wt %.

4 . The single crystal production apparatus according to claim 1 , wherein the heater has a cylindrical shape and has a notch at a lower part of the heater.

5 . The single crystal production apparatus according to claim 1 , wherein the heater has a cylindrical shape and has a lower part that has a smaller thickness than the other parts.

6 . The single crystal production apparatus according to claim 1 , wherein the furnace body has an inner wall that is formed as a heat resistant wall containing plural ring shaped heat resistant members each having a prescribed height that are accumulated on each other, and the ring shaped heat resistant members each may contain plural divided pieces that are joined to each other in a ring shape.

7 . The single crystal production apparatus according to claim 1 , wherein the metal oxide is a material having a melting point that is higher than Pt.

8 . The single crystal production apparatus according to claim 2 , wherein the metal oxide is a material having a melting point that is higher than Pt.

9 . The single crystal production apparatus according to claim 3 , wherein the metal oxide is a material having a melting point that is higher than Pt.

10 . The single crystal production apparatus according to claim 1 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

11 . The single crystal production apparatus according to claim 2 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

12 . The single crystal production apparatus according to claim 3 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

13 . The single crystal production apparatus according to claim 7 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

14 . The single crystal production apparatus according to claim 8 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

15 . The single crystal production apparatus according to claim 9 , wherein the crucible contains a Pt—Rh alloy, and a single crystal of β-Ga 2 O 3 is produced.

16 . The single crystal production apparatus according to claim 10 , wherein the crucible contains a Pt—Rh alloy having a Rh content of from 10 to 30 wt %.

17 . The single crystal production apparatus according to claim 11 , wherein the crucible contains a Pt—Rh alloy having a Rh content of from 10 to 30 wt %.

18 . The single crystal production apparatus according to claim 12 , wherein the crucible contains a Pt—Rh alloy having a Rh content of from 10 to 30 wt %.

19 . The single crystal production apparatus according to claim 1 , wherein the crucible contains Pt, and a single crystal of LiTaO 3 is produced.

20 . The single crystal production apparatus according to claim 2 , wherein the crucible contains Pt, and a single crystal of LiTaO 3 is produced.

21 . The single crystal production apparatus according to claim 3 , wherein the crucible contains Pt, and a single crystal of LiTaO 3 is produced.

Assignees

• Fujikoshi Machinery Corp
• Univ Shinshu

Inventors

• Hoshikawa Keigo
• Fujiwara Yasuyuki
• Kohama Keiichi
• Nakanishi Shinji
• Kobayashi Takumi
• Ohba Etsuko

Classifications

• C30B11/002 Primary

  Crucibles or containers for supporting the melt · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• C30B29/16 Primary

  Oxides · CPC title

• C22C5/04

  Alloys based on a platinum group metal · CPC title

• C30B29/30

  Niobates; Vanadates; Tantalates · CPC title