Flow assisted dynamic seal for high-convection, continuous-rotation plating

Patent metadata

Field	Value
Publication number	US-11655556-B2
Application number	US-202016841597-A
Country	US
Kind code	B2
Filing date	Apr 6, 2020
Priority date	Feb 28, 2018
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

First claim

What is claimed is:

1. An electroplating apparatus for semiconductor wafer fabrication, comprising:
a cup member;
an insert member that circumscribes the cup member, the insert member disposed below an outer radial portion of a bottom surface of the cup member; and
a seal member having an annular-shaped structure, the seal member disposed on a top surface of the insert member such that an outer radial portion of the seal member conforms to an upward slope of the top surface of the insert member and an inner radial portion of the seal member projects inward from an apex of the top surface of the insert member, wherein the inner radial portion of the seal member is positioned below the outer radial portion of the bottom surface of the cup member such that the inner radial portion of the seal member contacts the outer radial portion of the bottom surface of the cup member when the cup member is moved downward to contact the seal member.

2. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the upward slope of the top surface of the insert member is present on an inner radial area of the top surface of the insert member, and wherein the upward slope slopes upward from an outer radial area of the top surface of the insert member toward a processing region circumscribed by the insert member.

3. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 2 , wherein the outer radial area of the top surface of the insert member is flat relative to the inner radial area of the top surface of the insert member.

4. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member has a coefficient of friction less than 0.5.

5. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member has a coefficient of friction less than 0.1.

6. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member is formed of polytetrafluoroethylene.

7. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member is formed of one or more of polyphenylene sulfide (PPS), polyether ether ketone (PEEK), polyamideimide (PAI), and ultra-high-molecular-weight polyethylene (UHMW).

8. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member is formed of an elastomer mixture including a friction reducing additive.

9. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 8 , wherein the friction reducing additive is one or more of polytetrafluoroethylene, molybdenum disulfide, and graphite.

10. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the seal member is configured to flex downward about the apex of the top surface of the insert member when downward pressure is applied to a top surface of the inner radial portion of the seal member.

11. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , wherein the upward slope of the top surface of the insert member is configured to cause the inner radial portion of the seal member to arc upward when the outer radial portion of the seal member is forced to conform to the contour of the top surface of the insert member.

12. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 1 , further comprising:
a clamp ring configured to hold the seal member against the top surface of the insert member.

13. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 12 , wherein the clamp ring is formed to fit over an outer radial area of the top surface of the insert member with part of the outer radial portion of the seal member disposed between the clamp ring and the top surface of the insert member.

14. The electroplating apparatus for semiconductor wafer fabrication as recited in claim 13 , wherein the clamp ring is configured to bolt to the insert member with a plurality of bolts distributed in a uniform manner around the clamp ring, each of the plurality of bolts extending through a respective hole formed in the seal member.

15. A sealing system for an electroplating apparatus for semiconductor wafer fabrication, comprising:
a seal member having an annular-shaped structure configured for installation on a top surface of an insert member of the electroplating apparatus, the seal member having an outer radial portion that contacts the top surface of the insert member, the seal member having flexibility to physically conform to a contour of the top surface of the insert member such that the outer radial portion of the seal member conforms to an upward slope of the top surface of the insert member, the seal member having an inner radial portion that projects inward from an apex of the top surface of the insert member when the seal member is installed on the top surface of the insert member; and
a backing member having a shape that is equivalent to the seal member, the backing member configured to be disposed between the seal member and the top surface of the insert member.

16. The sealing system as recited in claim 15 , wherein the backing member is configured to apply a resistive upward force through the seal member when downward pressure is applied to a top surface of the inner radial portion of the seal member.

17. The sealing system as recited in claim 15 , wherein the backing member is configured to prevent a flow of electroplating solution against a bottom surface of the inner radial portion of the seal member.

18. The sealing system as recited in claim 15 , wherein the backing member is formed of stainless steel.

Assignees

• Lam Res Corp

Inventors

• Berke Aaron
• Banik Stephen J
• Buckalew Bryan
• Rash Robert

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D5/08

  Electroplating with moving electrolyte e.g. jet electroplating {(using locally applied jets of electrolyte C25D5/026)} · CPC title

• C25D17/004 Primary

  Sealing devices · CPC title