Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Patent metadata

Field	Value
Publication number	US-11652194-B2
Application number	US-202117305808-A
Country	US
Kind code	B2
Filing date	Jul 14, 2021
Priority date	Feb 28, 2017
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

The invention claimed is:

1. A light conversion member comprising semiconductor nanoparticles and manganese-activated fluoride complex fluorescent material,
wherein the semiconductor nanoparticles comprises Ag, In, Ga, and S, wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less, and
wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less.

2. The semiconductor nanoparticles according to claim 1 , wherein the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.2 to 0.9.

3. The semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

4. The semiconductor nanoparticles according to claim 1 , wherein a ratio of the number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and
the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.5 to 0.9.

5. The semiconductor nanoparticles according to claim 1 , wherein a ratio of the number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.27, and
the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.25 to 0.75.

6. A light-emitting device, comprising:
the light conversion member according to claim 1 ; and
a semiconductor light-emitting element.

7. The light-emitting device according to claim 6 , wherein the semiconductor light-emitting element is an LED chip.

8. A light conversion member comprising core-shell semiconductor nanoparticles and manganese-activated fluoride complex fluorescent material,
wherein the core-shell semiconductor nanoparticles comprises a core containing the semiconductor nanoparticles; and

a shell containing a semiconductor material essentially composed of a Group 13 element and a Group 16 element and arranged on a surface of the core,
wherein the semiconductor nanoparticles comprises Ag, In, Ga, and S,
wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less,
wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and
wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

9. The light conversion member according to claim 8 , wherein the Group 13 element contained in the shell is Ga.

10. The light conversion member according to claim 8 , wherein the Group 16 element contained in the shell is S.

11. The light conversion member according to claim 8 , wherein a compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

12. A light-emitting device, comprising:
the light conversion member according to claim 8 ; and
a semiconductor light-emitting element.

13. The light-emitting device according to claim 12 , wherein the semiconductor light-emitting element is an LED chip.

14. A light conversion member comprising core-shell semiconductor nanoparticles and manganese-activated fluoride complex fluorescent material,
wherein the core-shell semiconductor nanoparticles comprises a core containing the semiconductor nanoparticles; and

a shell containing a semiconductor material essentially composed of a Group 1 element, a Group 13 element, and a Group 16 element and arranged on a surface of the core,
wherein the semiconductor nanoparticles comprises Ag, In, Ga, and S,
wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less, and
wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and
wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

15. The light conversion member according to claim 14 , wherein the Group 13 element contained in the shell is Ga.

16. The light conversion member according to claim 14 , wherein the Group 16 element contained in the shell is S.

17. The light conversion member according to claim 14 , wherein a compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

18. A light-emitting device, comprising:
the light conversion member according to claim 14 ; and
a semiconductor light-emitting element.

19. The light-emitting device according to claim 18 , wherein the semiconductor light-emitting element is an LED chip.

Assignees

• National Univ Corporation Tokai National Higher Education And Research System
• Univ Osaka
• Nichia Corp

Inventors

• Torimoto Tsukasa
• Kameyama Tatsuya
• Kishi Marino
• Miyamae Chie
• Kuwabata Susumu
• Uematsu Taro
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title