Ultrathin atomic layer deposition film accuracy thickness control

Patent metadata

Field	Value
Publication number	US-11646198-B2
Application number	US-202117305938-A
Country	US
Kind code	B2
Filing date	Jul 16, 2021
Priority date	Mar 20, 2015
Publication date	May 9, 2023
Grant date	May 9, 2023

Abstract

Methods for depositing films by atomic layer deposition using aminosilanes are provided.

First claim

What is claimed is:

1. A method of depositing a silicon-containing film on a substrate, the method comprising:
providing the substrate;
exposing the substrate to an aminosilane;
exposing the substrate to a reactant to react with the aminosilane and form at least a portion of a silicon-containing film;
alternating between exposing of the substrate to the aminosilane and the exposing of the substrate to the reactant in cycles until a desired thickness of the silicon-containing film is deposited; and
prior to exposing the substrate to the aminosilane, exposing the substrate to a soak gas containing only one or more gases used when exposing the substrate to the reactant,
wherein the exposing of the substrate to the aminosilane and exposing of the substrate to the reactant is performed at a temperature greater than about 400° C.

2. The method of claim 1 , wherein the aminosilane is selected from the group consisting of di(isopropylamido)silane and di(sec-butylamino)silane.

3. The method of claim 1 , wherein a plasma is ignited during the exposing of the substrate to the reactant.

4. The method of claim 3 , wherein the plasma is generated in a chamber housing the substrate.

5. The method of claim 3 , wherein the plasma is generated remotely.

6. The method of claim 1 , wherein the silicon-containing film comprises silicon oxide.

7. The method of claim 1 , wherein the silicon-containing film comprises oxygen-doped silicon carbide.

8. The method of claim 1 , wherein a chamber housing the substrate is purged between exposing the substrate to the aminosilane and exposing the substrate to the reactant.

Assignees

• Lam Res Corp

Inventors

• Qian Jun
• Kang Hu
• Lavoie Adrien
• Matsuyama Seiji
• Kumar Purushottam

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title