Multicolor approach to DRAM STI active cut patterning

Patent metadata

Field	Value
Publication number	US-11638374-B2
Application number	US-202217720465-A
Country	US
Kind code	B2
Filing date	Apr 14, 2022
Priority date	Aug 1, 2018
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

First claim

What is claimed is:

1. A processing tool for forming a semiconductor device, the processing tool comprising:
a central transfer station having a plurality of processing chambers disposed around the central transfer station;
a robot within the central transfer station configured to move a substrate between the plurality of processing chambers;
a first processing chamber connected to the central transfer station, the first processing chamber configured to perform etch process;
a second processing chamber connected to the central transfer station, the second processing chamber configured to perform deposition processes; and
a controller connected to one or more of the central transfer station, the robot, the first processing chamber, and the second processing chamber, the controller having one or more configurations selected from a first configuration to move a substrate on the robot between the plurality of processing chambers, a second configuration to perform a conformal gapfill process in one or more of the processing chambers, a third configuration to perform one or more etch processes, a fourth configuration to perform a chemical-mechanical planarization process, and a fifth configuration to perform a lithography process.

2. The processing tool of claim 1 , wherein the substrate comprises a plurality of first lines extending along a first direction, the first lines comprising a first spacer material, a plurality of second lines comprising a second spacer material extending along the first direction, the second lines arranged on either side of the plurality of first lines and having a trench between adjacent second lines exposing a portion of the substrate.

3. The processing tool of claim 2 , wherein the conformal gapfill process fills the trench with carbon gapfill material to form a carbon line along the first direction and deposit an overburden carbon material having an opening aligned with the carbon gapfill material in the filled trench.

4. The processing tool of claim 3 , wherein the lithography process comprises depositing a spin-on-carbon (SOC) layer on the carbon material to fill the opening in the overburden carbon material and cover the carbon gapfill material in the filled trench and the overburden carbon material.

5. The processing tool of claim 4 , wherein the chemical-mechanical planarization process comprises removing the SOC layer and the overburden carbon material to expose a top surface of the first spacer material, the second spacer material and the carbon gapfill material.

6. The processing tool of claim 1 , further comprising a sixth configuration to perform one or more deposition processes.

7. The processing tool of claim 6 , wherein the one or more deposition processes comprise:
depositing an oxide layer on the top surface of the first spacer material, the second spacer material and the carbon gapfill material; and
depositing a plurality of spaced third lines of a third spacer material in a second direction different from the first direction so that the third spacer lines cross the first spacer lines and the carbon line.

8. The processing tool of claim 1 , further comprising a seventh configuration to perform a second lithography process.

9. The processing tool of claim 8 , wherein the second lithography process comprises forming lines of fourth spacer material on either side of the spaced third material lines leaving a trench between adjacent fourth spacer material lines exposing a top surface of the oxide layer, the trench extending along the second direction.

10. The processing tool of claim 9 , wherein the one or more etch processes comprises etching the first spacer material through the trench to expose portions of the substrate.

Assignees

• Applied Materials Inc

Inventors

• Singh Tejinder
• Koshizawa Takehito
• Mallick Abhijit Basu
• Manna Pramit
• Fung Nancy
• Venkatasubramanian Eswaranand
• Hwang Ho-Yung David
• Gottheim Samuel E

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6902 Primary

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10B12/01 Primary

  Manufacture or treatment · CPC title

• H10B12/488

  Word lines · CPC title