Nanowire having ruthenium nanowire within a silica nanotube

Patent metadata

Field	Value
Publication number	US-11618962-B2
Application number	US-202017107251-A
Country	US
Kind code	B2
Filing date	Nov 30, 2020
Priority date	Jun 30, 2020
Publication date	Apr 4, 2023
Grant date	Apr 4, 2023

Abstract

Disclosed is a technical idea of forming ruthenium and ruthenium-cobalt alloy nanowires having various diameters using electroplating. More particularly, a technology of forming ruthenium and ruthenium-cobalt alloy nanowires on a porous template, on pores of which nanotubes are deposited using atomic layer deposition (ALD), using electroplating, and annealing the ruthenium and ruthenium-cobalt alloy nanowires to form ruthenium-cobalt alloy nanowires having various diameters.

First claim

What is claimed is:

1. A method of manufacturing a nanowire having a ruthenium nanowire within a silica nanotube, the method comprising:
forming a silica nanotube by depositing silica (SiO 2 ) layer on an inner surface of a pore of a porous template using atomic layer deposition (ALD);
forming the ruthenium nanowire on the silica (SiO 2 ) layer by reducing ruthenium (Ru) in the silica nanotube formed on the porous template using electroplating; and
annealing the formed ruthenium nanowire,
wherein a size of crystal grains of the annealed ruthenium nanowire within the silica nanotube is determined based on an annealing temperature of the annealing.

2. The method according to claim 1 , wherein a thickness of the silica (SiO 2 ) layer formed on an inner surface the pore of the porous template is 5 nm to 30 nm.

3. The method according to claim 1 , wherein the porous template comprises any one of a polycarbonate membrane (PCM) and an anodic aluminum oxide (AAO) membrane.

4. The method according to claim 1 , wherein the annealing is performed at 400° C. to 600° C.

5. The method according to claim 4 , wherein the size of crystal grains of the annealed ruthenium nanowire in the silica nanotube is within 9 nm to 12 nm.

6. A method of manufacturing a nanowire having a ruthenium nanowire within a silica nanotube, the method comprising:
forming a silica nanotube by depositing silica (SiO 2 ) layer on an inner surface of a pore of a porous template using atomic layer deposition (ALD);
forming the ruthenium nanowire on the silica (SiO 2 ) layer by reducing ruthenium (Ru) in the silica nanotube formed on the porous template using electroplating with deionized water-based solution including boric acid (H 3 BO 3 ) and citric acid (C 6 H 8 O 7 ) as buffering agents; and
annealing the formed ruthenium nanowire,
wherein a size of crystal grains of the annealed ruthenium nanowire within the silica nanotube is determined based on an annealing temperature of the annealing.

7. A method of manufacturing a nanowire having a ruthenium-cobalt alloy nanowire within a silica nanotube, the method comprising:
forming a silica nanotube by depositing silica (SiO 2 ) layer on an inner surface of a pore of a porous template using atomic layer deposition (ALD);
forming a ruthenium-cobalt alloy nanowire on the silica (SiO 2 ) layer by reducing ruthenium (Ru) and cobalt (Co) in the silica nanotube on the porous template using electroplating; and
annealing the formed ruthenium-cobalt alloy nanowire at 400° C. to 600° C.,
wherein
the ruthenium-cobalt alloy nanowire comprises a ruthenium (Ru)-cobalt (Co) complete solid solution, and
the ruthenium (Ru)-cobalt (Co) complete solid solution is formed by moving cobalt (Co) into a ruthenium (Ru) matrix after the annealing so that electrical resistivity of the annealed ruthenium-cobalt alloy nanowire is reduced through annealing.

8. The method according to claim 7 ,
wherein the crystal structure is an amorphous-like structure when the content of the cobalt (Co) is 1 at % to 48 at %.

9. The method according to claim 7 , wherein a size of crystal grains of the ruthenium-cobalt alloy nanowire increases when the content of the cobalt (Co) increases.

10. The method according to claim 7 , wherein the content of cobalt (Co) is controlled by adjusting at least one of a precursor concentration of cobalt (Co) and a current density of the electroplating.

Assignees

• Univ Korea Res & Bus Found

Inventors

• Moon Jun Hwan
• Kim Seung Hyun
• Kim Tae Soon
• Jeon Yoo Sang
• Kim Young Keun

Classifications

• C25D1/006 Primary

  Nanostructures, e.g. using aluminium anodic oxidation templates [AAO] · CPC title

• C25D3/02 Primary

  from solutions (C25D5/34 - C25D5/46 take precedence) · CPC title

• C23C16/402 Primary

  Silicon dioxide · CPC title

• C25D3/567

  containing more than 50% by weight of platinum group metals · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title