Image sensing device

Patent metadata

Field	Value
Publication number	US-11611716-B2
Application number	US-202117554355-A
Country	US
Kind code	B2
Filing date	Dec 17, 2021
Priority date	Mar 11, 2021
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

An image sensing device includes a first substrate configured to include a plurality of unit pixels configured to detect incident light to produce pixel signals carrying image information in the incident light, a second substrate positioned adjacent to the first substrate and including a structure that generates a first magnetic field at the first substrate affecting the plurality of unit pixels and at least one shielding device disposed between the first substrate and the second substrate, wherein the shielding device includes a sensing circuit configured to detect a first voltage corresponding to the first magnetic field and an offset circuit configured to generate, based on the first voltage, a second magnetic field that counteracts the first magnetic field.

First claim

What is claimed is:

1. An image sensing device comprising:
a first substrate including a plurality of unit pixels to detect incident light to produce pixel signals carrying image information in the incident light;
a second substrate positioned adjacent to the first substrate and including a structure that generates a first magnetic field at the first substrate affecting the plurality of unit pixels; and
at least one shielding device disposed between the first substrate and the second substrate,
wherein the shielding device includes:
a sensing circuit to detect a first voltage corresponding to the first magnetic field; and
an offset circuit to generate, based on the first voltage, a second magnetic field that counteracts the first magnetic field, and
wherein the shielding device is arranged over a location of the second substrate, and wherein the location of the second substrate is determined based on a distance between the first substrate and the second substrate, a density of the first magnetic field per unit area, and where a logic circuit is located in the second substrate.

2. The image sensing device according to claim 1 , wherein the sensing circuit includes:
a current generator to generate a first current; and
a voltage detector to detect the first voltage generated by the first current and the first magnetic field,
wherein the first voltage includes a Hall effect voltage generated by the first magnetic field provided in a direction perpendicular to the first current.

3. The image sensing device according to claim 2 , wherein a first current that flows in the current generator in parallel but opposite in direction to another first current that flows in another adjacent current generator located within a predetermined distance.

4. The image sensing device according to claim 1 , wherein the offset circuit includes an amplification circuit to receive the first voltage from the sensing circuit and generate a second voltage by amplifying the first voltage.

5. The image sensing device according to claim 4 , wherein the offset circuit includes a magnetic field generator that includes a conductor plate, wherein the second magnetic field is induced when the second voltage is provided to the magnetic field generator.

6. The image sensing device according to claim 1 , further comprising a shielding controller to provide a test voltage to the offset circuit during a test mode operation for calculating a second voltage corresponding to the first voltage such that the second voltage is associated with the second magnetic field that counteracts the first magnetic field, wherein the offset circuit includes a magnetic field generator including a conductor plate for generating a test magnetic field using the test voltage provided to the magnetic field generator.

7. The image sensing device according to claim 6 , wherein:
the sensing circuit detects a third voltage corresponding to a third magnetic field formed after generation of the test magnetic field; and
the shielding controller sets the test voltage as the second voltage in a case that the third voltage has a predetermined voltage range and map the first voltage to the second voltage to store mapping information between the first voltage and the second voltage.

8. The image sensing device according to claim 7 , wherein:
during a normal mode operation for offsetting the first magnetic field,
the sensing circuit transmits the first voltage to the offset circuit; and
the offset circuit includes:
an amplification circuit, upon receiving the first voltage, amplifying the first voltage to the second voltage based on mapping information between the first voltage and the second voltage stored in the shielding controller; and
a magnetic field generator including a conductor plate,
wherein the second magnetic field is induced when the second voltage is provided to the magnetic field generator.

9. An image sensing device comprising:
a first substrate including electric circuits that generate electrons in the first substrate;
a second substrate arranged adjacent to the first substrate and including a structure that generates a first magnetic field for providing a magnetic force to the electrons;
a shielding device disposed between the first substrate and the second substrate to detect the first magnetic field and generate, based on the detected first magnetic field, a second magnetic field for counteracting the first magnetic field; and
a shielding controller to provide a test voltage to the shielding device during a test mode operation for calculating a second voltage corresponding to the first magnetic field such that the second voltage is associated with the second magnetic field that counteracts the first magnetic field,
wherein the shielding device generates a test magnetic field corresponding to the test voltage.

10. The image sensing device according to claim 9 , wherein the second magnetic field is identical in magnitude to the first magnetic field and is opposite in phase to the first magnetic field.

11. The image sensing device according to claim 10 , wherein the shielding device:
detects a first voltage in response to the first magnetic field applied at a predetermined angle with respect to the shielding device; and
amplifies the first voltage to generate a second voltage for generating the second magnetic field.

12. The image sensing device according to claim 11 , wherein:
the shielding device includes a magnetic field generation region to receive the second voltage; and
the second magnetic field is induced by the second voltage.

13. The image sensing device according to claim 10 , wherein:
the shielding device detects a third magnetic field formed after generation of the test magnetic field; and
the shielding controller sets the test voltage as the second voltage in a case that the third magnetic field reaches a predetermined value, and map the first magnetic field to the second voltage to store mapping information between the first magnetic field and the second voltage.

14. The image sensing device according to claim 13 , wherein, during a normal mode operation for offsetting the first magnetic field, the shielding device detects the first magnetic field and generate the second magnetic field based on the second voltage corresponding to the first magnetic field.

Assignees

• Sk Hynix Inc

Inventors

• Lee Eun Khwang

Classifications

• G12B17/02 Primary

  from electric or magnetic fields, e.g. radio waves · CPC title

• H04N17/002

  for television cameras · CPC title

• H04N25/617 Primary

  for reducing electromagnetic interference, e.g. clocking noise · CPC title

• G01R15/202

  using Hall-effect devices (Hall elements in arrangements for measuring electrical power G01R21/08) · CPC title

• H04N25/79

  Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors · CPC title