Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

Patent metadata

Field	Value
Publication number	US-11608559-B2
Application number	US-202117401261-A
Country	US
Kind code	B2
Filing date	Aug 12, 2021
Priority date	Dec 14, 2016
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

First claim

What is claimed is:

1. A substrate processing system, comprising:
a first chamber including a substrate support;
a showerhead arranged above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber,
wherein the showerhead includes:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum configured to control a temperature of the showerhead and including:
a first plenum disposed between the top layer and the bottom layer and configured to receive heat transfer fluid from a heat transfer fluid inlet,
a second plenum disposed between the top layer and the bottom layer and configured to output the heat transfer fluid to a heat transfer fluid outlet, and
flow channels that are formed between the top layer and the bottom layer and that form fluidic connections between the first plenum and the second plenum;

a secondary gas plenum including a secondary gas inlet configured to receive secondary gas and secondary gas injectors configured to inject the secondary gas into the first chamber;
through-holes that are not in fluidic communication with the heat transfer fluid plenum or the secondary gas plenum within the showerhead; and
a cylindrical wall with an inner surface and an outer surface, wherein:
the cylindrical wall extends from a showerhead bottom surface,
the inner surface of the cylindrical wall is located radially outside of the plurality of through holes and the plurality of secondary gas injectors, and
the outer surface of the cylindrical wall is located radially inward from an outer edge of the showerhead.

2. The substrate processing system of claim 1 wherein the flow channels each include non-straight segments.

3. The substrate processing system of claim 1 wherein the flow channels each include both straight segments and non-straight segments.

4. The substrate processing system of claim 1 wherein outlets of the flow channels are located between adjacent ones of inlets of the flow channels.

5. The substrate processing system of claim 1 , wherein the first plenum is arcuate.

6. The substrate processing system of claim 1 , wherein the second plenum is arcuate.

7. The substrate processing system of claim 1 , wherein the heat transfer fluid inlet is formed between the top layer and the bottom layer.

8. The substrate processing system of claim 7 , wherein the heat transfer fluid outlet is formed between the top layer and the bottom layer.

9. The substrate processing system of claim 1 , wherein the secondary gas plenum includes:
a first gas plenum;
a second gas plenum; and
a flow restriction arranged between the first gas plenum and the second gas plenum.

10. The substrate processing system of claim 1 , wherein the heat transfer fluid plenum is configured to not flow the heat transfer fluid into the first chamber.

11. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends downwardly from a bottom surface thereof and that is located radially outside of the through-holes and the secondary gas injectors.

12. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends upwardly from a top surface thereof and that is located radially outside of the through-holes and the secondary gas injectors.

13. A showerhead for a substrate processing chamber, the showerhead comprising:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum including:
a first plenum formed between the top layer and the bottom layer and configured to receive heat transfer fluid from a heat transfer fluid inlet;
a second plenum formed between the top layer and the bottom layer and configured to output the heat transfer fluid to a heat transfer fluid outlet; and
flow channels that are formed between the top layer and the bottom layer and that connect the first plenum with the second plenum such that the first plenum is in fluidic communication with the second plenum;

a secondary gas plenum including a secondary gas inlet configured to receive secondary gas and secondary gas injectors configured to inject the secondary gas;
through-holes that are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum within the showerhead; and
a cylindrical wall with an inner surface and an outer surface, wherein:
the cylindrical wall extends from a showerhead bottom surface,
the inner surface of the cylindrical wall is located radially outside of the plurality of through holes and the plurality of secondary gas injectors, and
the outer surface of the cylindrical wall is located radially inward from an outer edge of the showerhead.

14. The showerhead of claim 13 , wherein the showerhead includes a cylindrical wall that extends downwardly from a bottom surface thereof and that is located radially outside of the through-holes and the secondary gas injectors.

15. The showerhead of claim 13 , wherein the showerhead includes a cylindrical wall that extends upwardly from a top surface thereof and that is located radially outside of the through-holes and the secondary gas injectors.

16. The showerhead of claim 13 , wherein:
the heat transfer fluid inlet is formed between the top layer and the bottom layer; and
the heat transfer fluid outlet is formed between the top layer and the bottom layer.

17. A showerhead for a substrate processing chamber, the showerhead comprising:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum including:
a first plenum formed between the top layer and the bottom layer and configured to receive heat transfer fluid from a heat transfer fluid inlet;
a second plenum formed between the top layer and the bottom layer and configured to output the heat transfer fluid to a heat transfer fluid outlet; and
flow channels that are formed between the top layer and the bottom layer and that connect the first plenum with the second plenum such that the first plenum is in fluidic communication with the second plenum;

a secondary gas plenum including a secondary gas inlet configured to receive secondary gas and secondary gas injectors configured to inject the secondary gas; and
a cylindrical wall with an inner surface and an outer surface, wherein:
the cylindrical wall extends from a showerhead bottom surface,
the inner surface of the cylindrical wall is located radially outside of the plurality of through holes and the plurality of secondary gas injectors, and
the outer surface of the cylindrical wall is located radially inward from an outer edge of the showerhead.

18. The showerhead of claim 17 , wherein the showerhead includes a cylindrical wall that extends downwardly from a bottom surface thereof and that is located radially outside of the secondary gas injectors.

19. The showerhead of claim 17 , wherein the showerhead includes a cylindrical wall that extends upwardly from a top surface thereof and that is located radially outside of the secondary gas injectors.

20. The showerhead of claim 17 , wherein the heat transfer fluid plenum further includes:
the heat transfer fluid inlet is form

Assignees

• Lam Res Corp

Inventors

• Batzer Rachel
• Qiu Huatan
• Varadarajan Bhadri
• Breiling Patrick Girard
• Gong Bo
• Schlosser Will
• Gui Zhe
• Tan Taide
• Hohn Geoffrey

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title