Arc suppression and pulsing in high power impulse magnetron sputtering (hipims)
US-2016237554-A1 · Aug 18, 2016 · US
US11600476B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11600476-B2 |
| Application number | US-202117503994-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 18, 2021 |
| Priority date | Mar 31, 2014 |
| Publication date | Mar 7, 2023 |
| Grant date | Mar 7, 2023 |
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A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
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What is claimed is: 1. A chamber comprising: a plurality of cathodes, each of the plurality of cathodes having a length and a volume a target below each of the plurality of cathodes, the target comprising material to be deposited on a carrier in a sputtering process; a rotating shield below the plurality of the cathodes configured to expose one of the plurality of the cathodes through a shroud below the one of the plurality of the cathodes and through a shield hole of the rotating shield, the shield hole below the shroud, the shroud having a length that is greater than the length of the one of the plurality of the cathodes and the shroud having a volume that is greater than the volume of the one of the plurality of cathodes; and a rotating pedestal configured to support the carrier. 2. The chamber of claim 1 , the shroud configured to contain a majority of the material from a target that does not deposit on the carrier during the sputtering process and to prevent cross-contamination between the plurality of the cathodes. 3. The chamber of claim 2 , further comprising a moveable magnet to provide an adjustable a magnet-to-target spacing between a magnet of the cathode and the target to improve uniformity of the material. 4. The chamber of claim 3 , wherein the cathode further comprises a swing arm configured to adjust an angle between a plane of the one of the plurality of the cathodes and a plane of the carrier. 5. The chamber of claim 4 , wherein the angle is adjustable in a range of 30 degrees to 50 degrees. 6. The chamber of claim 5 , wherein the shroud is configured so that at least 80% of the material from the target not deposited on the carrier is contained in the shroud. 7. The chamber of claim 4 , further comprising a linear slide located over the swing arm so that the swing arm can adjust the in 5 degree increments with respect to the carrier. 8. The chamber of claim 1 , comprising twelve cathodes and twelve targets. 9. The chamber of claim 8 , wherein the twelve targets comprise six inner race targets and six outer race targets. 10. The chamber of claim 8 , further comprising individual adjustments including a target-source height adjustment, an angular adjustment, and a magnet-target spacing adjustment mechanism. 11. The chamber of claim 8 , wherein the targets comprise different materials. 12. The chamber of claim 8 , further comprising a telescopic cover ring designed to provide for a telescopic deposition of the materials sputtered from the targets on the carrier. 13. The chamber of claim 12 , the telescopic cover ring surrounding the rotating pedestal. 14. The chamber of claim 13 , further comprising a deposition ring located below and in direct contact with the telescopic cover ring. 15. The chamber of claim 14 , further comprising an intermediate ring 1208 can be over the deposition ring. 16. The chamber of claim 15 , wherein the telescopic cover ring comprises an L-shaped structure. 17. The chamber of claim 1 , further comprising a direct current power supply. 18. The chamber of claim 1 , further comprising a radio frequency power supply.
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
of refractory metals or yttrium · CPC title
Nitrides {(C23C16/303 takes precedence)} · CPC title
Target holders (includes backing plates and endblocks) · CPC title
Arrangements · CPC title
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