Probe for detecting near field and near-field detection system including the same

Patent metadata

Field	Value
Publication number	US-11579167-B2
Application number	US-202117333924-A
Country	US
Kind code	B2
Filing date	May 28, 2021
Priority date	Sep 11, 2020
Publication date	Feb 14, 2023
Grant date	Feb 14, 2023

Abstract

A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

First claim

What is claimed is:

1. A near field detection probe, comprising:
a cantilever substrate including a tip region, the tip region being shaped such that a width of an end portion of the tip region is less than a width of a region outside of the tip region, the tip region including a sensing region at the end portion of the tip region;
first and second antenna electrodes extending from the tip region along one surface of the cantilever substrate with the first antenna electrode being spaced apart from the second antenna electrode;
an insulating layer surrounding the cantilever substrate and the first and second antenna electrodes; and
an electromagnetic wave blocking layer surrounding the insulating layer in a region other than the sensing region, the electromagnetic wave blocking layer including a conductive material.

2. The near field detection probe of claim 1 , wherein the sensing region is between the first and second antenna electrodes at the end portion of the tip region.

3. The near field detection probe of claim 2 , wherein a laser target region to which a laser is irradiated to the cantilever substrate from an outside is within the sensing region.

4. The near field detection probe of claim 1 , wherein the electromagnetic wave blocking layer is configured to expose the insulating layer within the sensing region.

5. The near field detection probe of claim 1 , wherein the electromagnetic wave blocking layer is configured to expose the cantilever substrate within the sensing region.

6. The near field detection probe of claim 1 , wherein the insulating layer comprises:
a hydrosulfide-based photo curable resin.

7. The near field detection probe of claim 1 , wherein the electromagnetic wave blocking layer comprises:
a graphite powder.

8. The near field detection probe of claim 7 , wherein the electromagnetic wave blocking layer further comprises:
a hydrosulfide-based photo curable resin.

9. The near field detection probe of claim 1 , wherein the cantilever substrate comprises:
a semiconductor material.

10. The near field detection probe of claim 1 , wherein
the insulating layer surrounds an upper surface, a lower surface, and side surfaces of the cantilever substrate, when viewed from the end portion of the tip region, and
the electromagnetic wave blocking layer surrounds an upper surface, a lower surface, and side surfaces of the insulating layer outside the sensing region, when viewed from the end portion of the tip region.

11. A near field detection probe, comprising:
a substrate including a tip region;
an antenna electrode on the substrate;
an electromagnetic wave blocking layer exposing a portion of the tip region of the substrate, the electromagnetic wave blocking layer including a conductive material; and
an insulating layer interposed between the substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode on the substrate and the electromagnetic wave blocking layer.

12. The near field detection probe of claim 11 , wherein the electromagnetic wave blocking layer exposes a region adjacent to the antenna electrode.

13. The near field detection probe of claim 11 , wherein
the substrate includes a semiconductor material, and
the electromagnetic wave blocking layer includes a metal powder or a graphite powder.

14. The near field detection probe of claim 11 , wherein the insulating layer and the electromagnetic wave blocking layer each comprise:
a photo curable resin.

15. The near field detection probe of claim 11 , wherein the electromagnetic wave blocking layer has a thickness in a range of about 100 nm to about 3 μm.

16. A near-field detection system, comprising:
an electric field generator configured to apply an electric field to an analysis sample;
a probe configured to detect a near field that has passed through the analysis sample, the probe including,
a cantilever substrate,
an antenna electrode on the cantilever substrate,
an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and
an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer;

a current detector connected to the probe; and
a laser system irradiating a laser to each of the electric field generator and the probe.

17. The near-field detection system of claim 16 , wherein the antenna electrode comprises:
first and second antenna electrodes spaced apart from each other,
wherein the laser system is configured to irradiate the laser to a laser target region between the first and second antenna electrodes within the sensing region.

18. The near-field detection system of claim 16 , wherein the electric field generator and the probe are at a first side and a second side of the analysis sample, respectively.

19. The near-field detection system of claim 16 , wherein the electromagnetic wave blocking layer is configured to block the electric field from reaching the probe outside of the sensing region.

20. The near-field detection system of claim 16 , wherein a spatial resolution of the near field measured by the probe is less than about 3 μm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Jongmin
• Koo Namil
• Michael Nagel
• Park Suhwan
• Park Junbum
• Baek Inkeun
• Lee Sion

Classifications

• G01N21/39

  using tunable lasers · CPC title

• H05K9/0081

  Electromagnetic shielding materials, e.g. EMI, RFI shielding (H05K9/0003 takes precedence) · CPC title

• G01N21/68

  using high frequency electric fields · CPC title

• G01N21/3581

  using far infrared light; using Terahertz radiation · CPC title

• G01Q60/22 Primary

  Probes, their manufacture, or their related instrumentation, e.g. holders · CPC title