Method of forming individual metallic microstructures

Patent metadata

Field	Value
Publication number	US-9334571-B2
Application number	US-201314410893-A
Country	US
Kind code	B2
Filing date	Mar 13, 2013
Priority date	Jun 29, 2012
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

Methods for the formation of individual, precisely shaped nano- or micro-scale metallic structures, particularly pyramids. With this technique, mass fabrication of high-quality, uniform, and ultra-sharp pyramids, cones and wedges is achieved. The high yield, reproducibility, durability and massively parallel fabrication methods of this disclosure provide structures suitable for reliable optical sensing and detection and for cementing near-field optical imaging and spectroscopy as a routine characterization.

First claim

What is claimed is:

1. A method of making a plurality of three-dimensional metallic microstructures, the method comprising:
masking a silicon-based substrate with a mask having a plurality of apertures therethrough;
etching the masked substrate to form a plurality of shaped cavities within the substrate;
depositing a metallic layer over the mask and into the plurality of shaped cavities in contact with the substrate, and thus forming a metallic structure within each of the cavities that is shaped by the shaped cavity;
removing the metallic layer from over the mask;
removing the mask from the substrate to provide a plurality of individual metallic microstructures.

2. The method of claim 1 wherein the step of etching the masked substrate comprises crystallographically etching the masked substrate to form a plurality of pyramidal cavities.

3. The method of claim 2 wherein the plurality of pyramidal cavities have a tip angle of 70.52 degrees.

4. The method of claim 1 wherein the step of removing the metallic layer from over the mask comprises physically stripping the metallic layer from the mask.

5. The method of claim 1 wherein the mask is a nitride mask and the step of removing the mask from the substrate comprises using an acidic bath.

6. The method of claim 1 wherein the metallic layer comprises gold, silver, copper, tungsten, tantalum, molybdenum, or titanium.

7. The method of claim 1 wherein the silicon-based substrate is a semiconductor material.

8. The method of claim 7 wherein the semiconductor material is a silicon wafer.

9. The method of claim 1 , wherein the resulting plurality of individual metallic microstructures have a tip angle of 70.52 degrees.

10. The method of claim 1 , further comprising, prior to depositing the metallic layer, oxidizing a surface of the cavity to provide a plurality of individual metallic microstructures having a tip angle of less than 70 degrees.

11. The method of claim 1 , further comprising forming an aperture in the metallic layer in the cavity.

12. The method of claim 11 wherein forming the aperture in the metallic layer comprises focused ion beam (FIB) milling of the metallic layer.

13. The method of claim 1 , further comprising a step of removing a plurality of the individual metallic microstructures from within the cavities of the substrate.

14. The method of claim 1 , wherein the etching step includes undercutting the mask within the substrate, and the step of depositing a metallic layer includes forming the metallic structure as a separate element that is not connected to the metallic layer over the mask.

15. A method of making a plurality of three-dimensional metallic microstructures, the method comprising:
masking a silicon-based substrate with a mask having a plurality of apertures therethrough;
etching the masked substrate to form a plurality of shaped cavities within the substrate;
removing the mask from the substrate and applying a photoresist layer over the etched substrate;
depositing a metallic layer over the photoresist and into the plurality of shaped cavities in contact with the substrate, and thus forming a metallic structure within each of the cavities that is shaped by the shaped cavity;
removing the photoresist and the metallic layer from the substrate to provide a plurality of individual metallic microstructures.

16. The method of claim 15 wherein the step of etching the masked substrate comprises crystallographically etching the masked substrate to form a plurality of pyramidal cavities.

17. The method of claim 16 wherein the plurality of pyramidal cavities have a tip angle of 70.52 degrees.

18. The method of claim 15 , further comprising a step of removing a plurality of the individual metallic microstructures from within the cavities of the substrate.

19. The method of claim 15 , wherein the etching step includes undercutting the mask within the substrate, and the step of depositing a metallic layer includes forming the metallic structure as a separate element that is not connected to the metallic layer over the mask.

Assignees

• Univ Minnesota

Inventors

• Oh Sang-Hyun
• Johnson Timothy W

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3452

  Microstructure · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B32B43/006

  Delaminating · CPC title

• B81C1/00111 Primary

  Tips, pillars, i.e. raised structures (microneedles A61M37/0015) · CPC title