Light emitting semiconductor device

Patent metadata

Field	Value
Publication number	US-11569416-B2
Application number	US-201716331015-A
Country	US
Kind code	B2
Filing date	Sep 11, 2017
Priority date	Sep 10, 2016
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer;
a first electrode provided on a first surface of the first semiconductor layer;
a second electrode provided on a first surface of the second semiconductor layer; the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer;
a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer, the first insulation layer and the first electrode being separated on the first surface of the first semiconductor layer; and
a first cover electrode provided on the first electrode and the first semiconductor layer,
wherein:
the first electrode includes a first surface facing the first surface of the first semiconductor layer and a second surface that is opposite to the first surface of the first semiconductor layer,
the first electrode includes protrusions extending from the second surface of the first electrode in a first direction, and a groove provided on the second surface of the first electrode and between the protrusions, and
the first cover electrode extends into the groove of the first electrode.

2. The semiconductor device of claim 1 , further comprising an oxide film between the protrusions of the first electrode and the first cover electrode.

3. The semiconductor device of claim 1 , wherein an upper width of at least one of the protrusions ranges from 1 um to 10 um.

4. The semiconductor device of claim 1 ,
wherein the semiconductor structure includes a non-light emitting region exposing the first conductive semiconductor layer and a light emitting region protruding over the non-light emitting region,
wherein the light emitting region includes the active layer and the second conductive semiconductor layer, and
wherein the second cover electrode includes a plurality of pad parts disposed on the light emitting region and a connection part configured to connect the plurality of pad parts.

5. The semiconductor device of claim 4 ,
wherein the semiconductor structure includes a plurality of partition regions defined by a first virtual line passing through centers of a first side surface and a third side surface of the semiconductor structure, which are opposite to each other, and a second virtual line passing through centers of a second side surface and a fourth side surface of the semiconductor structure, which are opposite to each other when viewed from a top of the semiconductor structure,
wherein the plurality of partition regions includes a first partition region including the first side surface and the fourth side surface, a second partition region including the first side surface and the second side surface, a third partition region including the second side surface and the third side surface, and a fourth partition region including the third side surface and the fourth side surface.

6. The semiconductor device of claim 5 ,
wherein the plurality of pad parts includes a first pad part disposed in the first partition region, a second pad part disposed in the second partition region, and a third pad part disposed in the fourth partition region, and
wherein the connection part includes a first connection part configured to connect the first pad part with the second pad part and a second connection part configured to connect the first pad part with the third pad part.

7. The semiconductor device of claim 6 ,
wherein the first connection part has a width decreasing toward the first virtual line, and
wherein the second connection part has a width decreasing toward the second virtual line.

8. The semiconductor device of claim 1 ,
wherein the first groove includes a groove or a plurality of grooves disposed apart from each other.

9. The semiconductor device of claim 1 , wherein
the first cover electrode overlaps a section of the first insulation layer on the first surface of the first semiconductor layer and in a second direction parallel to the first surface of the first semiconductor layer.

10. The semiconductor device of claim 9 , wherein
a first area of the section of the first insulation layer overlapped by the first cover electrode in the second direction is smaller than a second area of a region of the first surface of first semiconductor layer between the first insulation layer and the first electrode.

11. The semiconductor device of claim 10 , wherein a ratio of the second area to the first area ranges between 1:0.15 and 1:1.

12. The semiconductor device of claim 1 , wherein a second insulation layer is disposed on the first cover electrode, the second electrode, and the first insulation layer.

13. The semiconductor device of claim 12 ,
wherein the second insulation layer includes a first opening over the first cover electrode and a second opening over the second cover electrode, and
wherein the semiconductor device further comprises:
a first bump electrode provided in the first opening of the second insulation layer and on the first cover electrode; and
a second bump electrode provided in the second opening of the second insulation layer and on the second cover electrode.

14. The semiconductor device of claim 1 , further comprising a stepped portion extending from the first surface of the first conductive semiconductor layer to the first surface of the second conductive semiconductor layer.

15. The semiconductor device of claim 14 , wherein
the stepped portion includes a first part where the first electrode is disposed, a second part when the second electrode is disposed, a third part where the first insulation layer is disposed between the first part and the second part, and a fourth part where the first cover electrode is disposed between the first part and the third part.

16. The semiconductor device of claim 1 , wherein
the second cover electrode includes a plurality of second branch electrodes extending in a first plan direction and a second connection electrode connecting the plurality of second branch electrodes, and
the first cover electrode includes a plurality of first branch electrodes provided between the second branch electrodes and a first connection electrode connecting the plurality of first branch electrodes.

17. The semiconductor device of claim 1 , wherein
each of the first semiconductor layer and the second semiconductor layer includes a material having an empirical formula In x1 Al y1 Ga 1-x1-y1 N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), and
the semiconductor device emits ultraviolet (UV)-C radiation.

Assignees

• Suzhou Lekin Semiconductor Co Ltd

Inventors

• Sung Youn Joon
• Kim Min Sung
• Lee Eun Dk

Classifications

• H01L2933/0016

  Electricity · mapped topic

• H01L33/38 Primary

  Electricity · mapped topic

• H01L33/382

  Electricity · mapped topic

• H01L33/12

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic