Semiconductor light emitting element and method for producing the same

Patent metadata

Field	Value
Publication number	US-8969898-B2
Application number	US-201313772562-A
Country	US
Kind code	B2
Filing date	Feb 21, 2013
Priority date	Feb 21, 2012
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

First claim

What is claimed is:

1. A method for producing a semiconductor light emitting device, comprising:
a lamination forming step of forming a semiconductor lamination by successively stacking a first semiconductor layer and a second semiconductor layer on a substrate, where the first semiconductor layer and the second semiconductor layer respectively have different conductive types;
an exposing step of removing a portion of the semiconductor lamination so as to form a step region havi…

Assignees

• Nichia Corp

Inventors

• Onishi Masahiko
• Kitahama Shun

Classifications

• H10H20/032

  Electricity · mapped topic

• H10H20/8312

  Electricity · mapped topic

• H10H20/852

  Electricity · mapped topic

• H10H20/832 Primary

  Electricity · mapped topic

• H10H20/831

  Electricity · mapped topic