Dielectric thin-film structure and electronic device including the same

Patent metadata

Field	Value
Publication number	US-11569341-B2
Application number	US-202117344475-A
Country	US
Kind code	B2
Filing date	Jun 10, 2021
Priority date	Feb 8, 2021
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

First claim

What is claimed is:

1. A dielectric thin-film structure comprising:
a substrate; and
a dielectric layer on the substrate, the dielectric layer including
a tetragonal crystal structure, and
crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees with an out-of-plane orientation.

2. The dielectric thin-film structure of claim 1 , wherein the tetragonal crystal structure includes a first lattice parameter in a <100> direction and a <010> direction, and a second lattice parameter in a <001> direction.

3. The dielectric thin-film structure of claim 1 , wherein the dielectric layer comprises at least one of hafnium oxide, zirconium oxide, or hafnium zirconium oxide.

4. The dielectric thin-film structure of claim 3 , wherein the dielectric layer comprises:
a first dielectric layer including hafnium oxide, and
a second dielectric layer including zirconium oxide.

5. The dielectric thin-film structure of claim 4 , wherein the dielectric layer includes hafnium zirconium oxide between the first dielectric layer and the second dielectric layer.

6. The dielectric thin-film structure of claim 1 , wherein the proportion of preferentially oriented crystal grains in the dielectric layer is 10% or more.

7. The dielectric thin-film structure of claim 1 , wherein the dielectric layer is grown on the substrate.

8. The dielectric thin-film structure of claim 7 , wherein the substrate comprises titanium nitride preferentially grown in a <111> direction.

9. The dielectric thin-film structure of claim 7 , wherein the substrate comprises cobalt titanium nitride preferentially grown in a <111> direction.

10. The dielectric thin-film structure of claim 1 , further comprising:
a material layer between the substrate and the dielectric layer.

11. The dielectric thin-film structure of claim 10 , wherein the material layer comprises at least one of niobium titanium oxide or silver oxide.

12. The dielectric thin-film structure of claim 11 , wherein the dielectric layer comprises crystal grains preferentially grown in a <110> direction.

13. The dielectric thin-film structure of claim 10 , wherein the material layer comprises niobium nitride.

14. The dielectric thin-film structure of claim 13 , wherein the dielectric layer comprises crystal grains preferentially grown in a <100> direction.

15. The dielectric thin-film structure of claim 1 , wherein the substrate is an electrode.

16. The dielectric thin-film structure of claim 1 , wherein
an X-ray diffraction (XRD) analysis of the dielectric layer includes a first peak with a first intensity between 15 and 16.25 degrees and a second peck with a second intensity between 22.5 and 23.75 degrees, and
the first intensity is greater than the second intensity.

17. A capacitor comprising:
a lower electrode;
an upper electrode; and
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer including
a tetragonal crystal structure, and
crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees with an out-of-plane orientation.

18. The capacitor of claim 17 , wherein the dielectric layer comprises at least one of hafnium oxide, zirconium oxide, or hafnium zirconium oxide.

19. The capacitor of claim 17 , wherein the proportion of preferentially oriented crystal grains is 10% or more.

20. The capacitor of claim 17 , wherein the dielectric layer is grown on the lower electrode.

21. The capacitor of claim 20 , wherein the lower electrode comprises at least one of titanium nitride or cobalt titanium nitride preferentially grown in a <111> direction.

22. The capacitor of claim 17 , further comprising a material layer between the dielectric layer and at least one of the lower electrode or the upper electrode.

23. The capacitor of claim 22 , wherein the material layer comprises at least one of niobium titanium oxide, silver oxide, or niobium nitride.

24. An electronic apparatus comprising:
a field effect transistor; and
the capacitor of claim 17 , the capacitor electrically connected to the field effect transistor.

25. The electronic apparatus of claim 24 , wherein the field effect transistor comprises
a semiconductor layer including a source and a drain,
a gate insulating layer on the semiconductor layer, and
a gate electrode on the gate insulating layer.

26. The electronic apparatus of claim 24 , wherein the electronic apparatus is included in at least one of a logic or a memory device.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Hyangsook
• Kim Junghwa
• Lee Eunha
• Song Jeonggyu
• Lee Jooho
• Jeong Myoungho

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392 Primary

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/2926

  Crystal orientations · CPC title