Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies

Patent metadata

Field	Value
Publication number	US-11569258-B2
Application number	US-202016933693-A
Country	US
Kind code	B2
Filing date	Jul 20, 2020
Priority date	Oct 25, 2018
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

Some embodiments include a method of forming stacked memory decks. A first deck has first memory cells arranged in first tiers disposed one atop another, and has a first channel-material pillar extending through the first tiers. An inter-deck structure is over the first deck. The inter-deck structure includes an insulative expanse, and a region extending through the insulative expanse and directly over the first channel-material pillar. The region includes an etch-stop structure. A second deck is formed over the inter-deck structure. The second deck has second memory cells arranged in second tiers disposed one atop another. An opening is formed to extend through the second tiers and to the etch-stop structure. The opening is subsequently extended through the etch-stop structure. A second channel-material pillar is formed within the opening and is coupled to the first channel-material pillar. Some embodiments include integrated assemblies.

First claim

We claim:

1. An integrated assembly, comprising:
a first deck having first memory cells arranged in first tiers disposed one atop another, and having first channel-material pillars extending through the first tiers;
an inter-deck structure over the first deck; the inter-deck structure comprising an insulative expanse;
a second deck over the inter-deck structure; the second deck having second memory cells arranged in second tiers disposed one atop another;
second channel-material pillars coupled to some of the first channel-material pillars through conductive interconnects passing through the inter-deck structure; and
a first channel-material pillar not being coupled with any of the second channel-material pillars, and instead being covered by a multi-material structure which extends into the inter-deck structure.

2. The integrated assembly of claim 1 wherein said first channel-material pillar which is not coupled with any of the second channel-material pillars is one of a plurality of the first channel-material pillars which are not coupled with any of the second channel-material pillars.

3. The integrated assembly of claim 1 comprising
conductive couplers over the first channel-material pillars; one of the conductive couplers being over the first channel-material pillar which is not coupled with any of the second channel-material pillars; and wherein the multi-material structure is over and directly against said one of the conductive couplers.

4. The integrated assembly of claim 3 wherein the conductive couplers comprise conductively-doped semiconductor material.

5. The integrated assembly of claim 4 wherein the multi-material structure includes tungsten over the conductively-doped semiconductor material, and includes a liner between the tungsten and the conductively-doped semiconductor material; wherein the liner comprises nitrogen and one or both of titanium and tungsten.

6. The integrated assembly of claim 1 wherein said multi-material structure includes an oxide over a metal-containing material which is not an oxide.

7. The integrated assembly of claim 6 wherein said oxide is a metal oxide.

8. The integrated assembly of claim 7 wherein the metal oxide comprises one or more of magnesium oxide, aluminum oxide, hafnium oxide and zirconium oxide.

9. The integrated assembly of claim 6 wherein the metal-containing material which is not an oxide comprises one or more of tungsten, tungsten nitride, titanium and titanium nitride.

10. The integrated assembly of claim 1 wherein said multi-material structure includes aluminum oxide over tungsten.

11. The integrated assembly of claim 1 wherein said multi-material structure includes, in ascending order from the first channel-material pillar which is not coupled with any of the second channel-material pillars; a liner comprising nitrogen and one or both of titanium and tungsten; a mid-level material comprising one or both of titanium and tungsten; and an upper-level material comprising aluminum oxide.

12. The integrated assembly of claim 11 wherein said multi-material structure has a thickness within a range of from about 10 nm to about 300 nm; the liner has a thickness within a range of from about 10 Å to about 5 nm; the mid-level material has a thickness within a first range of from about 5 nm to about 150 nm; and the upper-level material has a thickness within a second range of from about 5 nm to about 150 nm.

Assignees

• Micron Technology Inc

Inventors

• Liu Liu
• Daycock David
• Bhonsle Rithu K
• Mazzone Giovanni
• Bilik Narula
• Greenlee Jordan D
• Lee Minsoo
• Li Benben

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/61

  using masks · CPC title

• H01L27/11556

  Electricity · mapped topic

• H01L27/11582 Primary

  Electricity · mapped topic

• H01L21/32

  Electricity · mapped topic