X-ray detecting panel comprising a photodiode, a main bias voltage signal line, and an auxiliary bias voltage signal line, X-ray detecting device, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11567222-B2
Application number	US-201816341247-A
Country	US
Kind code	B2
Filing date	Sep 26, 2018
Priority date	Feb 1, 2018
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

The present disclosure provides an X-ray detecting device, and a manufacturing method of an X-ray detecting panel. The present disclosure also provides an X-ray detecting panel including a main bias voltage signal line and a photodiode. A cathode of the photodiode is electrically connected to the main bias voltage signal line. The X-ray detecting panel further includes at least one auxiliary bias voltage signal line electrically connected to the main bias voltage signal line.

First claim

The invention claimed is:

1. An X-ray detecting panel, comprising:
a substrate;
a photodiode on the substrate;
a main bias voltage signal line, which is on a side of the photodiode distal to the substrate, electrically connected to a cathode of the photodiode, and configured such that a main bias voltage is provided to the photodiode through the main bias voltage signal line; and
an auxiliary bias voltage signal line, which is on a side of the main bias voltage signal line distal to the photodiode, and configured such that an auxiliary bias voltage is provided to the photodiode through the auxiliary bias voltage signal line;
a layer in which the main bias voltage signal line is located;
a first passivation layer covering the layer; and
a first via hole penetrating through the first passivation layer,
wherein the auxiliary bias voltage signal line is on a side of the first passivation layer distal to the main bias voltage signal line, and
the auxiliary bias voltage signal line is electrically connected to the main bias voltage signal line through the first via hole.

2. The X-ray detecting panel of claim 1 , further comprising:
an auxiliary bias voltage signal source configured to supply the auxiliary bias voltage signal line with an auxiliary bias voltage capable of compensating the main bias voltage at a position where the auxiliary bias voltage signal line is electrically connected to the main bias voltage signal line.

3. The X-ray detecting panel of claim 1 , wherein an extending direction of the auxiliary bias voltage signal line is perpendicular to an extending direction of the main bias voltage signal line.

4. The X-ray detecting panel of claim 1 , further comprising:
a bonding pad on a side of the first passivation layer distal to the main bias voltage signal line, and
a lead wire on a side of the first passivation layer distal to the bonding pad; and
a second via hole penetrating through at least the first passivation layer;
wherein the bonding pad is electrically connected to the lead wire through the second via hole, and
the auxiliary bias voltage signal line is in a same layer as the bonding pad.

5. The X-ray detecting panel of claim 4 , wherein the auxiliary bias voltage signal line and the bonding pad comprise a transparent electrode material.

6. The X-ray detecting panel of claim 4 , further comprising:
a layer in which the photodiode is located on a cathode side of the photodiode;
a planarization layer covering the layer in which the photodiode is located on the cathode side of the photodiode;
a second passivation layer covering the planarization layer on a side of the planarization layer distal to the photodiode; and
a third via hole penetrating through the second passivation layer and the planarization layer,
wherein the main bias voltage signal line is on a side of the second passivation layer distal to the planarization layer, and is electrically connected to a cathode of the photodiode through the third via hole.

7. The X-ray detecting panel of claim 4 , further comprising:
a data line;
a gate line; and
a plurality of detection units, each detection unit of the plurality of detection units comprising the photodiode and a switching transistor,
a first electrode of the switching transistor is connected to an anode of the photodiode, a second electrode of the switching transistor is connected to the data line, a control electrode of the switching transistor is connected to the gate line, and a cathode of the switching transistor is connected to the main bias voltage signal line.

8. The X-ray detecting panel of claim 7 , further comprising:
a plurality of data lines; and
a plurality of gate lines,
wherein the plurality of data lines and the plurality of gate lines intersect with each other to define the plurality of detection units,
second electrodes of switching transistors in the plurality of detection units in a same column are connected to a same data line, and
control electrodes of the switching transistors in the plurality of detection units in a same row are connected to a same gate line.

9. The X-ray detecting panel of claim 8 , wherein the main bias voltage signal line comprises a metal material and covers the switching transistor.

10. The X-ray detecting panel of claim 8 , wherein cathodes of photodiodes in the plurality of detection units in a same column are electrically connected to a same main bias voltage signal line.

11. The X-ray detecting panel of claim 7 , further comprising:
a detection area; and
a peripheral area on at least one side of the detection area, wherein the plurality of detection units are within the detection area, and the bonding pad and the lead wire are in the peripheral area.

12. The X-ray detecting panel of claim 1 , further comprising:
a plurality of main bias voltage signal lines comprising the main bias voltage signal line; and
at least one auxiliary bias voltage signal line comprising the auxiliary bias voltage signal line;
wherein the at least one auxiliary bias voltage signal line is electrically connected to all of the plurality of main bias voltage signal lines.

13. The X-ray detecting panel of claim 1 , further comprising:
a scintillation layer on a light incident surface and capable of converting X-rays into visible light.

14. An X-ray detecting device, comprising:
an X-ray detecting panel of claim 1 ;
a main bias voltage signal source configured to supply a main bias voltage to the photodiode through the main bias voltage signal line; and
an auxiliary bias voltage signal source configured to supply an auxiliary bias voltage to the photodiode through the auxiliary bias voltage signal line.

15. The X-ray detecting device of claim 14 , wherein the main bias voltage signal source and the auxiliary bias voltage signal source are a same signal source.

16. A manufacturing method of an X-ray detecting panel, comprising:
providing a substrate;
forming a photodiode on the substrate;
forming a pattern comprising a main bias voltage signal line on a side of the photodiode distal to the substrate, the main bias voltage signal line being electrically connected to a cathode of the photodiode; and
forming a pattern comprising an auxiliary bias voltage signal line on a side of the pattern comprising the main bias voltage signal line distal to the photodiode;
between the step of forming the pattern comprising the main bias voltage signal line on the side of the photodiode distal to the substrate and the step of forming the pattern comprising the auxiliary bias voltage signal line on the side of the pattern comprising the main bias voltage line distal to the photodiode, further comprising steps of:
forming a first passivation layer on a side of the pattern comprising the main bias voltage signal line distal to the photodiode; and
forming a first via hole penetrating through the first passivation layer such that the auxiliary bias voltage signal line obtained in the step of forming the pattern comprising the auxiliary bias voltage signal line is electrically connected to the main bias voltage signal line through the first via hole.

17. The manufacturing method of claim 16 , further comprising:
forming a pattern comprising a lead wire prior to the step of forming the first passivation layer;
forming a second via hole after forming the first passivation layer, the second via hole penetrating through at least the first passivation layer to expose the lead wire, the first via hole and the second via hole being formed by one patterning process; and
forming a patt

Assignees

• Beijing Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Hua Gang
• Mi Lei
• Xue Yanna
• Bao Zhiying
• Zhang Yong
• Bai Lu
• Wang Jingpeng
• Fang Haobo
• Lin Jian

Classifications

• G01T1/2006

  using a combination of a scintillator and photodetector which measures the means radiation intensity · CPC title

• G01T1/20

  with scintillation detectors · CPC title

• G01T1/2018

  Scintillation-photodiode combinations · CPC title

• G01T1/20184 Primary

  Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits · CPC title

• G01N23/00

  Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 · CPC title