Selectively bonding light-emitting devices via a pulsed laser

Patent metadata

Field	Value
Publication number	US-11557692-B2
Application number	US-202016748692-A
Country	US
Kind code	B2
Filing date	Jan 21, 2020
Priority date	Jun 11, 2019
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

First claim

What is claimed is:

1. A method for electrically coupling a first semiconductor device to a target substrate, the method comprising:
positioning the first semiconductor device proximate to the target substrate by employing a pick-up head to spatially align an electrical contact of the first semiconductor device with an electrical contact of the target substrate; and
transmitting, through the pick-up head and into the first semiconductor device, a photon pulse with a temporal profile characterized by a temporal pulse width and a spatial profile characterized by at least one of a one-dimensional or two-dimensional pulse width and beam spot size that is selected to control thermal effects associated with thermal energy induced by the photon pulse and a wavelength that is selected such that a substantial portion of the thermal energy is absorbed and initially localized within a body of the first semiconductor device and proximate to the electrical contact of the first semiconductor device to bond the electrical contact of the first semiconductor device to the electrical contact of the target substrate.

2. The method of claim 1 , further comprising:
employing the pick-up head to pick up the first semiconductor device from a carrier substrate and position the first semiconductor device proximate to the target substrate; and
transmitting, through the pick-up head, the photon pulse to irradiate the first semiconductor device.

3. The method of claim 1 , further comprising:
transmitting an additional photon pulse with an additional temporal profile that is selected to control thermal effects associated with additional thermal energy induced by the additional photon pulse, the additional thermal energy bonding an electrical contact of a second semiconductor device to a second electrical contact of the target substrate, the electrical contact of the first semiconductor device and the electrical contact of the second semiconductor device being linearly positioned, and
wherein the photon pulse and the additional photon pulse are transmitted by scanning a photon-pulse source across the linearly positioned first semiconductor device and the second semiconductor device to electrically couple the first semiconductor device and the second semiconductor device to the target substrate.

4. The method of claim 1 , further comprising:
positioning a linear array of semiconductor devices proximate to the target substrate, the linear array of semiconductor devices including the first semiconductor device, wherein the temporal profile of the photon pulse is selected to localize the thermal effects to the first semiconductor device thereby maintaining the spatial alignment of the semiconductor devices in the linear array of semiconductor devices with electrical contacts of the target substrate.

5. The method of claim 1 , wherein the first semiconductor device is a light-emitting diode (LED) with feature sizes that are less than 100 micrometers (μm) and the target substrate is a backplane of a display device.

6. The method of claim 1 , further comprising:
irradiating the first semiconductor device with a plurality of photon pulses that includes the first photon pulse, wherein a temporal period between consecutive photon pulses of the plurality of photon pulses is selected to control thermal effects associated with thermal energy provided by each of the plurality of photon pulses.

7. The method of claim 1 , wherein the temporal profile is based on a thermal diffusivity and a geometry associated with the first semiconductor device such that the temporal profile localizes the thermal effects at the first semiconductor device.

8. The method of claim 1 , wherein the temporal profile is selected to localize the thermal effects associated with the thermal energy at the electrical contact of the first semiconductor device.

9. The method of claim 1 , wherein the temporal profile is selected to localize the thermal effects associated with the thermal energy at the electrical contact of the first semiconductor device and another electrical contact of the first semiconductor device or another semiconductor device.

10. The method of claim 1 , wherein the temporal profile is selected such that the thermal energy initially localized within the body of the first semiconductor device diffuses to the electrical contact of the first semiconductor device and does not substantially heat a previously bonded electrical contact of the first semiconductor device or another semiconductor device.

11. The method of claim 1 , further comprising:
forming an elastomer layer on a top surface of the first semiconductor device;
affixing a surface of the pick-up head to the elastomer layer of the first semiconductor device;
employing the pick-up head to pick up the first semiconductor device, via the elastomer layer;
employing the pick-up head to spatially align the electrical contact of the first semiconductor device with the electrical contact of the target substrate; and
employing a photon source to transmit the photon pulse through the pick-up head and irradiate the top surface of the first photon pulse.

12. The method of claim 1 , wherein transmitting the photon pulse forms an electrical bond between the electrical contact of the first semiconductor device and the electrical contact of the target substrate, the method further comprising:
transmitting an additional photon pulse with an additional temporal profile that is selected to control thermal effects associated with additional thermal energy induced by the additional photon pulse, the additional thermal energy annealing the electrical bond between the electrical contact of the first semiconductor device and the electrical contact of the target substrate.

13. The method of claim 12 , wherein an additional electrical bond between an additional electrical contact of the first semiconductor device and an additional electrical contact of the target substrate is formed, the method further comprising:
scanning a photon source that transmitted the additional photon pulse across at least one of the first semiconductor device or the target substrate to anneal the additional electrical bond.

14. The method of claim 12 , wherein the first semiconductor device includes a first surface, a second surface that opposes the first surface, and an active layer disposed between the first surface and the second surface, the additional photon pulse irradiates the first surface, and a wavelength of the additional photon pulse is selected such that laser radiation associated with the additional photon pulsed is substantially absorbed by a portion of the semiconductor device disposed between the first surface and the active layer.

15. The method of claim 1 , further comprising:
depositing uncured underfill (UF) material intermediate the first semiconductor device and the target substrate; and
transmitting the photon pulse, wherein at least a portion of the thermal energy induced by the photon pulse cures the UF material.

16. The method of claim 15 , wherein depositing the uncured UF material intermediate the first semiconductor device and the target substrate is enabled by a capillary flow process.

17. The method of claim 15 , wherein the uncured UF material is deposited intermediate the first semiconductor device and the target substrate after the first semiconductor device is positioned proximate to the target substrate.

18. The method of claim 1 , wherein transmitting the photon pulse forms an electrical bond between the electrical contact of the first semiconductor de

Assignees

• Facebook Tech Llc
• Meta Platforms Tech Llc

Inventors

• Brodoceanu Daniel
• Abad Oscar Torrents
• Wu Jeb
• Chio Zheng Sung
• Farrens Sharon Nanette

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• G02B2027/0178

  Eyeglass type (eyeglass details G02C) · CPC title

• G02B27/0172

  characterised by optical features · CPC title

• H01L2933/0066

  Electricity · mapped topic

• H01L2224/75702

  Electricity · mapped topic