Method for producing a metal-ceramic substrate with at least one via

Patent metadata

Field	Value
Publication number	US-11557490-B2
Application number	US-202017008763-A
Country	US
Kind code	B2
Filing date	Sep 1, 2020
Priority date	Aug 29, 2016
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

A method for producing a metal-ceramic substrate with electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.

First claim

What is claimed is:

1. A method for producing a metal-ceramic substrate with a plurality of electrically conductive vias, the method comprising:
attaching a first metal layer in a planar manner to a first surface side of a ceramic layer and attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side;
introducing a copper hydroxide or copper acetate brine into a plurality of holes in the ceramic layer, with each of the plurality of holes delimiting one of the plurality of electrically conductive vias, prior to the attachment of both the first and the second metal layers, or subsequent to the attachment of one of the first and the second metal layers and prior to the attachment of the other one of the first and the second metal layers, to form an assembly;
converting the copper hydroxide or copper acetate brine into copper oxide; and
subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the plurality of holes.

2. The method of claim 1 , wherein introducing the copper hydroxide or copper acetate brine into the plurality of holes comprises:
spraying the ceramic layer with the copper hydroxide or copper acetate brine.

3. The method of claim 1 , wherein introducing the copper hydroxide or copper acetate brine into the plurality of holes comprises:
immersing the ceramic layer in the copper hydroxide or copper acetate brine.

4. The method of claim 1 , wherein converting the copper hydroxide or copper acetate brine into the copper oxide comprises:
before subjecting the assembly to the high-temperature step, converting the copper hydroxide or copper acetate brine into the copper oxide by thermal conversion in a temperature range between 100° C. and 200° C.

5. The method of claim 1 , wherein the ceramic layer comprises an Al 2 O 3 , AlN or Si 3 N 4 ceramic.

6. The method of claim 1 , wherein a semiconductor component is attached to the second metal layer.

7. The method of claim 6 , wherein the via is disposed underneath the semiconductor component.

8. The method of claim 1 , wherein the copper body produces an electrically conductive connection between the first and the second metal layers.

9. The method of claim 1 , wherein the first and the second metal layers are attached to the ceramic layer by a direct copper bonding (DCB) method.

10. The method of claim 1 , wherein the first and the second metal layers are attached to the ceramic layer by an active metal brazing (AMB) method.

11. The method of claim 6 , wherein the plurality of electrically conductive vias is disposed in a clustered manner underneath the semiconductor component.

Assignees

• Infineon Technologies Ag

Inventors

• Roth Alexander

Classifications

• C04B2237/62

  Forming laminates or joined articles comprising holes, channels or other types of openings · CPC title

• C04B2237/121

  based on aluminium · CPC title

• C04B2237/366

  Aluminium nitride · CPC title

• C04B2237/407

  Copper · CPC title

• H05K3/022

  Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates · CPC title