Precursors and methods for atomic layer deposition of transition metal oxides

Patent metadata

Field	Value
Publication number	US-11555242-B2
Application number	US-201916460139-A
Country	US
Kind code	B2
Filing date	Jul 2, 2019
Priority date	Feb 25, 2010
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

First claim

We claim:

1. A method for synthesizing a Zr or Hf compound, comprising:
combining a catalyst and cycloheptatriene in a container comprising magnesium to form a reaction mixture; and
adding a transition metal precursor comprising Zr or Hf to the reaction mixture,
wherein the Zr or Hf compound is (MeCp)ZrCHT, where Cp is cyclopentadienyl and CHT is cycloheptatrienyl,
wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-CHT(R 8 R 9 R 10 R 11 R 12 R 13 R 14 ), where M is Zr or Hf, and R 1-14 are independently H or an alkyl group,
wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 )CHT-M-CHD(R 8 R 9 R 10 R 11 R 12 R 13 R 14 R 15 R 16 ), where M is Zr or Hf, CHD is cycloheptadienyl, and R 1-16 are independently H or an alkyl group, or
wherein the Zr or Hf compound has the formula (R 1 R 2 R 3 R 4 R 5 R 6 R 7 R 8 )X-M-X(R 9 R 10 R 11 R 12 R 13 R 14 R 15 R 16 ), where M is Zr or Hf, R 1-16 are independently H or an alkyl group, and X is cycloheptatriene.

2. The method of claim 1 , wherein the transition metal precursor is a transition metal halide.

3. The method of claim 2 , wherein the transition metal precursor is a transition metal chloride.

4. The method of claim 1 , wherein the transition metal precursor is a transition metal halide THF adduct.

5. The method of claim 1 , wherein the transition metal precursor is in solution with THF.

6. The method of claim 1 , wherein the transition metal precursor is added to the reaction mixture over a one hour period.

7. The method of claim 1 , wherein tetrahydrofuran is combined with the catalyst and cycloheptatriene in forming the reaction mixture.

8. The method of claim 1 , wherein the catalyst is ferric chloride.

9. The method of claim 1 , wherein the magnesium is in the form of magnesium chips or turnings.

10. The method of claim 1 , wherein the Zr of Hf compound is a liquid.

11. The method of claim 1 , wherein the Zr of Hf compound is a solid.

12. The method of claim 1 , wherein the Zr or Hf compound has the formula C 7 H 7 -M-L or ((CH 3 ) 3 C 7 H 4 )-M-L.

Assignees

• Asm Int Nv

Inventors

• Hatanpaa Timo
• Niinisto Jaakko
• Ritala Mikko
• Leskela Markku
• Haukka Suvi

Classifications

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C01G27/02

  Oxides · CPC title

• C01G23/07

  Producing by vapour phase processes, e.g. halide oxidation · CPC title

• C23C16/405 Primary

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title