Precursors and methods for atomic layer deposition of transition metal oxides

Patent metadata

Field	Value
Publication number	US-9677173-B2
Application number	US-201615157698-A
Country	US
Kind code	B2
Filing date	May 18, 2016
Priority date	Feb 25, 2010
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

First claim

We claim:

1. A method for forming a hafnium oxide thin film on a substrate comprising:
alternately and sequentially contacting the substrate with a vapor phase first hafnium reactant and a vapor phase second oxygen reactant until a thin hafnium oxide film of a desired thickness and composition is obtained,
wherein the first hafnium reactant comprises at least one ligand comprising a C7 ring structure.

2. The method of claim 1 , wherein the first hafnium reactant is an organometallic reactant.

3. The method of claim 1 , wherein the first hafnium reactant comprises at least one cycloheptatrienyl (CHT) ligand.

4. The method of claim 3 , wherein the first hafnium reactant comprises two ligands, one of which is the CHT ligand.

5. The method of claim 4 , wherein the first hafnium reactant comprises two CHT ligands.

6. The method of claim 3 , wherein the first hafnium reactant comprises one CHT ligand and one cycloheptadienyl (CHD) ligand.

7. The method of claim 3 , wherein the first hafnium reactant comprises (CHT)HfNR, where R is Me 2 , MeEt or Et 2 .

8. The method of claim 1 , wherein the first hafnium reactant is (C 7 H 7 )Hf(C 7 H 7 ).

9. The method of claim 1 , wherein the first hafnium reactant is (C 7 H 7 )Hf(C 7 H 9 ).

10. The method of claim 1 , wherein the substrate temperature when contacted with the first and second reactants is above about 350 ° C.

11. The method of claim 1 , wherein the first hafnium reactant does not comprise a halide.

12. The method of claim 1 , wherein the second oxygen reactant is selected form oxygen, oxygen plasma, atomic oxygen, ozone, water, NO, NO 2 , N 2 O and H 2 O 2 .

13. The method of claim 12 , wherein the second oxygen reactant comprises oxygen plasma.

14. The method of claim 13 , wherein the oxygen plasma is generated in situ.

15. The method of claim 13 , wherein the oxygen plasma is generated remotely.

16. The method of claim 1 , wherein the first hafnium reactant comprises at least one substituted or unsubstituted cyclopentadienyl (Cp) ligand.

17. The method of claim 16 , wherein the first hafnium reactant comprises at least one cycloheptatrienyl (CHT) ligand.

18. An atomic layer deposition process for forming a hafnium oxide thin film on a substrate in a reaction space comprising multiple hafnium oxide deposition cycles, each deposition cycle comprising, alternately:
contacting the substrate with a first vapor phase hafnium reactant; and
contacting the substrate with a second vapor phase oxygen reactant;
wherein the deposition cycle is repeated until a hafnium oxide thin film of a desired thickness and composition is obtained, and wherein the first hafnium reactant comprises a C7 ring structure and an amide and the second reactant comprises an activated or excited oxygen species.

19. The method of claim 18 , wherein the first hafnium reactant comprises at least one cycloheptatrienyl (CHT) ligand.

20. The process of claim 19 , wherein the first hafnium reactant comprises (CHT)HfNR, where R is Me 2 , MeEt or Et 2 .

21. The method of claim 18 , wherein the second reactant comprises oxygen plasma or ozone.

22. The method of claim 18 , wherein the substrate temperature is above about 300° C.

23. The method of claim 18 , wherein the first hafnium reactant comprises at least one substituted or unsubstituted cyclopentadienyl (Cp) ligand.

Assignees

• Asm Int Nv

Inventors

• Hatanpaa Timo
• Niinisto Jaakko
• Ritala Mikko
• Leskela Markku
• Haukka Suvi

Classifications

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/405 Primary

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C01G27/02

  Oxides · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title