Methods for controlling etch depth by localized heating

Patent metadata

Field	Value
Publication number	US-11554445-B2
Application number	US-201916694580-A
Country	US
Kind code	B2
Filing date	Nov 25, 2019
Priority date	Dec 17, 2018
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions.

First claim

We claim:

1. A method for controlling temperature across different regions of a substrate, comprising:
individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly, the plurality of heating pixels providing temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body, the temperature distributions corresponding to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam; and
exposing the substrate to the ion beam to form a plurality of fins on the at least one grating, the at least one grating having a distribution of depths corresponding to the temperature distributions, wherein:
the temperature distributions include a first temperature at a first portion of the plurality of portions of the at least one grating and a second temperature at a second portion of the plurality of portions of the at least one grating; and
the first temperature is different than the second temperature.

2. The method of claim 1 , wherein at least one lens is disposed on the substrate.

3. The method of claim 2 , wherein the at least one grating comprises a grating material.

4. The method of claim 3 , wherein the grating material is exposed by a patterned hardmask.

5. The method of claim 1 , further comprising tilting the substrate by an actuator.

6. The method of claim 1 , further comprising rotating the substrate by an actuator.

7. The method of claim 1 , wherein the ion beam is configured to be directed to the substrate at an angle relative to a surface normal of the substrate.

8. A method for controlling temperature across different regions of a substrate, comprising:
individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly, the plurality of heating pixels providing first temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body, the first temperature distributions from the plurality of heating pixels corresponding to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam;
individually controlling light emitting diodes (LEDs) of LED arrays to provide second temperature distributions on the second surface of the substrate, the second temperature distributions from the LED arrays corresponding to a plurality of portions of at least one grating on the second surface of the substrate to be exposed to an ion beam; and
exposing the substrate to the ion beam to form a plurality of fins on the at least one grating, the at least one grating having a distribution of depths corresponding to the first temperature distributions and the second temperature distributions, wherein:
the first temperature distributions and the second temperature distributions include a first temperature at a first portion of the plurality of portions of the at least one grating and a second temperature at a second portion of the plurality of portions of the at least one grating; and
the first temperature is different than the second temperature.

9. The method of claim 8 , wherein at least one lens is disposed on the substrate.

10. The method of claim 9 , wherein the at least one grating comprises a grating material.

11. The method of claim 10 , wherein the grating material is exposed by a patterned hardmask.

12. The method of claim 8 , further comprising tilting the substrate by an actuator.

13. The method of claim 8 , further comprising rotating the substrate by an actuator.

14. The method of claim 8 , wherein the ion beam is configured to be directed to the substrate at an angle relative to a surface normal of the substrate.

Assignees

• Applied Materials Inc

Inventors

• Evans Morgan
• Olson Joseph C

Classifications

• G03F7/0005

  Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor · CPC title

• G02B5/1857

  using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title

• B23K26/364

  for making a groove or trench, e.g. for scribing a break initiation groove · CPC title

• B23K26/34 Primary

  Laser welding for purposes other than joining · CPC title

• G02B6/0016

  Grooves, prisms, gratings, scattering particles or rough surfaces · CPC title