Metal-coated porous polymeric stamp materials for electrochemical imprinting

Patent metadata

Field	Value
Publication number	US-11549193-B2
Application number	US-202117173837-A
Country	US
Kind code	B2
Filing date	Feb 11, 2021
Priority date	Feb 11, 2020
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

A metal-assisted chemical imprinting stamp includes a porous polymer substrate and a noble metal coating formed directly on the porous polymer substrate. Fabricating the metal-assisted chemical imprinting stamp includes providing a porous polymer substrate, and disposing a noble metal on the porous polymer substrate. Metal-assisted chemical imprinting includes positioning a silicon substrate in an etching solution, contacting a surface of the silicon substrate with a stamp comprising a noble metal layer on a surface of a porous polymer substrate, and separating the silicon substrate from the stamp to yield a pattern corresponding to the noble metal layer on the silicon substrate.

First claim

What is claimed is:

1. A metal-assisted chemical imprinting stamp comprising:
a porous polymer substrate; and
a nonporous noble metal coating formed directly on the porous polymer substrate.

2. The stamp of claim 1 , wherein the porous polymer substrate is resistant to hydrofluoric acid and hydrogen peroxide.

3. The stamp of claim 1 , wherein the porous polymer substrate defines pores having a pore size between about 5 nm and about 50 nm.

4. The stamp of claim 3 , wherein the porous polymer substrate comprises polyethersulfone.

5. The stamp of claim 1 , wherein the porous polymer substrate defines pores having a pore size between about 100 nm and about 2 μm.

6. The stamp of claim 5 , wherein the porous polymer substrate comprises polyvinylidene fluoride.

7. The stamp of claim 1 , wherein the nonporous noble metal coating comprises gold or silver.

8. The stamp of claim 1 , wherein a thickness of the nonporous noble metal coating is in a range of about 10 nm to about 50 nm.

9. A method of fabricating the metal-assisted chemical imprinting stamp of claim 1 , the method comprising:
providing the porous polymer substrate; and
disposing the nonporous noble metal coating on the porous polymer substrate.

10. The method of claim 9 , wherein disposing the nonporous noble metal coating on the porous polymer substrate comprises sputtering the noble metal on the porous polymer substrate.

11. A method of metal-assisted chemical imprinting, the method comprising:
positioning a silicon substrate in an etching solution;
contacting a surface of the silicon substrate with the metal-assisted chemical imprinting stamp of claim 1 ; and
separating the silicon substrate from the stamp to yield a pattern corresponding to the nonporous noble metal coating on the silicon substrate.

12. The method of claim 11 , wherein the silicon substrate is a silicon wafer.

13. The method of claim 11 , wherein the nonporous noble metal layer coating comprises nanometer-scale features.

14. The method of claim 13 , wherein a thickness of the nonporous noble metal coating is in a range between about 10 nm and about 50 nm.

15. The method of claim 11 , wherein the porous polymer substrate defines pores having a pore size in a range from about 5 nm to about 2 μm.

16. The method of claim 11 , wherein the etching solution comprises an electrolyte.

17. The method of claim 16 , further comprising a counter electrode in contact with the etching solution.

18. The method of claim 17 , further comprising externally electrically biasing the nonporous noble metal coating against the electrolyte with the counter electrode.

19. The method of claim 18 , further comprising applying a constant voltage or constant current to the counter electrode.

20. The method of claim 19 , wherein the nonporous noble metal layer coating functions as a working electrode.

21. The stamp of claim 1 , wherein the porous polymer substrate comprises polysulfone, polypropylene, polyacrylonitrile, or polytetrafluoroethylene.

Assignees

• Markovski Jasmina
• Sharstniou Aliaksandr
• Niauzorau Stanislau
• Azeredo Bruno
• Ding Yifu
• Univ Arizona State
• Univ Colorado Regents

Inventors

• Markovski Jasmina
• Sharstniou Aliaksandr
• Niauzorau Stanislau
• Azeredo Bruno
• Ding Yifu

Classifications

• H10P50/613

  of Group IV materials · CPC title

• C25F7/00

  Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects (for both electrolytic coating and removal C25D); Servicing or operating · CPC title

• C25F3/14 Primary

  locally · CPC title

• C25F3/12 Primary

  of semiconducting materials · CPC title

• C23C14/205

  by cathodic sputtering · CPC title