Light emitting device

Patent metadata

Field	Value
Publication number	US-11545599-B2
Application number	US-202017071374-A
Country	US
Kind code	B2
Filing date	Oct 15, 2020
Priority date	Oct 8, 2014
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

First claim

What is claimed is:

1. A white light emitting device, comprising:
a housing including a mounting region;
a light emitting diode chip mounted on the mounting region and configured to emit light having a peak wavelength in a blue wavelength band and a Full Width at Half Maximum (FWHM) of 40 nm or less at the peak wavelength;
a wavelength converter having a support and disposed on the light emitting diode chip;
a first phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a range from 520 nm to 550 nm;
a second phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a range from 600 nm to 660 nm; and
a third phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a range from 490 nm to 550 nm,
wherein:
the first phosphor is irregularly dispersed in the support and emits a first light including a portion of a green color range;
the second phosphor is irregularly dispersed in the support and emits a second light including a portion of a red color range;
the third phosphor is irregularly dispersed in the support and emits a third light including a portion of a cyan color range;
a surface of the wavelength converter has a portion having an embossed shape; and
a white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first light, the second light, and the third light.

2. The white light emitting device of claim 1 , wherein the first phosphor includes at least one of LuAG, YAG, nitride, and silicate phosphors.

3. The white light emitting device of claim 1 , wherein the second phosphor includes at least one of CASN, CASON, and SCASN phosphors.

4. The white light emitting device of claim 1 , wherein the third phosphor includes at least one of SBCA, BAM, silicate, and nitride phosphors.

5. The white light emitting device of claim 1 , wherein the wavelength converter includes at least one of silicone, epoxy, PMMA, PE, and PS.

6. The white light emitting device of claim 1 , wherein the peak wavelength of the light emitting diode chip is shorter than the third phosphor thereof.

7. The white light emitting device of claim 6 , wherein the light emitting diode chip emits light having a peak wavelength of 415 nm to 435 nm.

8. The white light emitting device of claim 1 , further comprises a reflector configured to serve to maximize reflection of light emitted from the light emitting diode chip and the first, second and third phosphors.

9. The white light emitting device of claim 8 , wherein the reflector includes a metal or metal oxide having high reflectance, such as aluminum (Al), silver (Ag), gold (Au), and titanium dioxide (TiO 2 ).

10. The white light emitting device of claim 1 , wherein the light emitting device is configured to emit white light generated by combination of light from the light emitting diode chip with light from the first phosphor and light from the second phosphor, the white light having a color rendering index (CRI) of 85 or higher.

11. A white light emitting device, comprising:
a housing including a mounting region;
a light emitting diode chip mounted on the mounting region and configured to emit light having a peak wavelength in a blue wavelength band and a Full Width at Half Maximum (FWHM) of 40 nm or less at the peak wavelength;
a wavelength converter disposed on the light emitting diode chip;
a first phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a green wavelength band;
a second phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a red wavelength band; and
wherein:
the first phosphor includes a green phosphor;
the second phosphor includes a first red phosphor and a second red phosphor and the first red phosphor and the second red phosphor are formed of different materials;
a surface of the wavelength converter has a portion having an embossed shape; and
a white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, the first red phosphor, and the second red phosphor.

12. The white light emitting device of claim 11 , wherein the wavelength converter includes at least one of silicone, epoxy, PMMA, PE, and PS.

13. The white light emitting device of claim 11 , further comprises a reflector configured to serve to maximize reflection of light emitted from the light emitting diode chip and the first and second phosphors.

14. The white light emitting device of claim 13 , wherein the reflector includes a metal or metal oxide having high reflectance, such as aluminum (Al), silver (Ag), gold (Au), and titanium dioxide (TiO 2 ).

15. The white light emitting device of claim 13 , wherein the housing further comprises a barrier reflector covering the reflector.

16. The white light emitting device of claim 11 , wherein the light emitting device is configured to emit white light generated by combination of light from the light emitting diode chip with light from the first phosphor and light from the second phosphor, the white light having a color rendering index (CRI) of 85 or higher.

17. The white light emitting device of claim 11 , wherein 40% or more of an optical spectrum of the white light being distributed in a wavelength range of 500 nm to 600 nm.

18. The white light emitting device of claim 11 , wherein the wavelength converter includes a first wavelength converter and a second wavelength converter and the second wavelength converter covers the first wavelength converter.

19. The white light emitting device of claim 18 , wherein the second wavelength converter is formed of material having a different hardness of the first wavelength converter.

20. The white light emitting device of claim 11 , further comprising:
a buffer portion disposed between the wavelength converter and the light emitting diode chip, wherein the buffer portion has lower hardness than the wavelength converter.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Kim Myung Jin
• Oh Kwang Yong
• Nam Ki Bum
• Oh Ji Youn
• Park Sang Shin
• Lim Michael

Classifications

• C09K11/617

  Silicates · CPC title

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/77342

  Silicates · CPC title

• C09K11/7774

  Aluminates · CPC title

• C09K11/7734

  Aluminates · CPC title