Light-emitting device

Patent metadata

Field	Value
Publication number	US-2016149095-A1
Application number	US-201414899748-A
Country	US
Kind code	A1
Filing date	Jun 16, 2014
Priority date	Jun 18, 2013
Publication date	May 26, 2016
Grant date	—

Abstract

A light-emitting device ( 1 ) includes a substrate ( 2 ); a wiring pattern ( 3 ), an electrode land ( 4 ), a sealing resin layer ( 5 ), a wire ( 7 ), and a resin dam ( 9 ) that are disposed on the substrate ( 2 ); at least one light-emitting element ( 6 ) that emits light having a peak emission wavelength in a wavelength range of 430 to 480 nm; a green phosphor ( 10 ) that is excited by primary light emitted from the light-emitting element ( 6 ) to emit light having a peak emission wavelength in a green region; and a first red phosphor ( 11 ) that is excited by the primary light to emit light having a peak emission wavelength in a red region. The first red phosphor ( 11 ) emits no light in a wavelength range of 700 nm or more and absorbs no light in a wavelength range of 550 to 600 nm.

First claim

1 . A light-emitting device comprising:
at least one light-emitting element; and a sealing resin layer covering the light-emitting element, the sealing resin layer comprising a green phosphor and a first red phosphor, wherein the light-emitting element emits light having a peak emission wavelength in a wavelength range of 430 to 480 nm, the green phosphor is excited by primary light emitted from the light-emitting element to emit light having a peak emission wavelength in a green region that is a wavelength range of 500 to 580 nm, the first red phosphor is excited by the primary light to emit light having a peak emission wavelength in a red region, and the first red phosphor emits no light in a wavelength range of 700 nm or more and absorbs no light in a wavelength range of 550 to 600 nm.

2 . The light-emitting device according to claim 1 , wherein the first red phosphor comprises at least one tetravalent-manganese-activated tetravalent metal fluoride phosphor represented by general formula (A): (M1) 2 ((M2) 1-h Mn h )F 6 (wherein (M1) is at least one alkali metal element selected from the group consisting of Li, Na, K, Rb, and Cs; (M2) is at least one tetravalent metal element selected from the group consisting of Ge, Si, Sn, Ti, and Zr; and h satisfies 0.001≦h≦0.1).

3 . The light-emitting device according to claim 2 , wherein, in general formula (A), (M1) is K, and (M2) is Si.

4 . The light-emitting device according to claim 1 , further comprising a second red phosphor that is excited by the primary light to emit light having a peak emission wavelength in a red region, wherein
the second red phosphor comprises at least one of a (Sr,Ca)AlSiN 3 :Eu phosphor, a CaAlSiN 3 :Eu phosphor, and a divalent-europium-activated oxynitride phosphor represented by general formula (E): (Eu a (M7) 1-a ) x Si b Al c O d N e (wherein x satisfies 0.15≦x≦1.5; a satisfies 0≦a≦1; b and c satisfy b+c=12; d and e satisfy d+e=16; and (M7) is at least one of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, and Gd).

5 . The light-emitting device according to claim 1 , wherein the green phosphor comprises at least one phosphor represented by general formula (B): (M3) 3-x Ce x (M4) 5 O 12 (wherein (M3) is at least one of Y, Lu, Gd, and La; (M4) is at least one of Al and Ga; and x satisfies 0.005≦x≦0.20).

6 . The light-emitting device according to claim 1 , wherein
the light-emitting element is an InGaN LED chip, and the light-emitting device emits white light.

Assignees

• Sharp Kk

Inventors

• Onuma Hiroaki
• Andou Masataka
• Masuda Masatsugu

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/00

  Package configurations · CPC title

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title