Chelating agents for quantum dot precursor materials in color conversion layers for micro-leds
US-2024194836-A1 · Jun 13, 2024 · US
US9647181B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9647181-B2 |
| Application number | US-201615045614-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2016 |
| Priority date | Dec 9, 2010 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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Provided is a light emitting device in which with the general color rendering index Ra and the special color rendering index R9 maintained at high numeric values, the light emission efficiency is prevented from being reduced as much as possible, and the high color rendering and the high efficiency are achieved so as to be usable for general lighting usage. The device includes at least one light emitting element 6 emitting a light having a peak emission wavelength in a near-ultraviolet to blue region, and a phosphor layer 5 containing a green phosphor excited by a primary light emitted from the light emitting element 6 and emitting a light having a peak emission wavelength in a green region, a first red phosphor excited by the primary light and emitting a light having a peak emission wavelength in a red region, and a second red phosphor exited by the primary light and emitting a light having a peak emission wavelength different from that of the first red phosphor in the red region.
Opening claim text (preview).
The invention claimed is: 1. A lighting device comprising: a ceramic substrate; a light emitting chip mounted on said ceramic substrate, for generating a primary light having a peak wavelength of 430 to 490 nm, said light emitting chip having a bottom surface facing said ceramic substrate and an upper surface; a pair of wires for electrically connecting said light emitting chip to a power supply, each of the wires having an end contacting with the upper surface of said light emitting chip; and a phosphor layer comprising: a first layer including a first phosphor composed of cerium, aluminum, lutetium and oxygen, for converting a portion of the primary light to a light having a first peak wavelength of 510 to 550 nm, and a second layer including a second phosphor composed of europium, silicon, aluminum and nitrogen, for converting a portion of the primary light to a light having a second peak wavelength longer than the first peak wavelength. 2. The lighting device of claim 1 , wherein the second phosphor has a half-value width of 85 to 110 nm. 3. The lighting device of claim 1 , wherein said phosphor layer further includes silica. 4. The lighting device of claim 1 , wherein a mixed light of the primary light, a first converted light by the first phosphor and a second converted light by the second phosphor is emitted from an upper surface of the first layer, and a bottom surface of the first layer receives the second converted light that is emitted from an upper surface of the second layer. 5. The lighting device of claim 4 , wherein the bottom surface of the first layer and the upper surface of the second layer contact with each other. 6. The lighting device of claim 4 , wherein said light emitting chip is located with a distance between said light emitting chip and the second layer. 7. The lighting device of claim 1 , wherein a median value of a grain diameter of the first phosphor is at least 8 μm and at most 20 μm. 8. The lighting device of claim 1 , wherein a median value of a grain diameter of the second phosphor is at least 5 μm and at most 15 μm. 9. The lighting device of claim 1 , wherein said light emitting chip is an LED. 10. The lighting device of claim 1 , wherein the first phosphor is an Al 5 Lu x O y : Ce series phosphor. 11. A lighting device comprising: a ceramic substrate; a light emitting chip mounted on said ceramic substrate, for generating a primary light having a peak wavelength of 430 to 490 nm, said light emitting chip having a bottom surface facing said ceramic substrate and an upper surface; a pair of wires for electrically connecting said light emitting chip to a power supply, each of the wires having an end contacting with the upper surface of said light emitting chip; and a phosphor layer including: a first phosphor composed of cerium, aluminum, lutetium and oxygen, for converting a portion of the primary light to a light having a first peak wavelength of 510 to 550 nm, and a second phosphor composed of europium, silicon, aluminum and nitrogen, for converting a portion of the primary light to a light having a second peak wavelength longer than the first peak wavelength, wherein, the phosphor layer is configured to be divided into plural layers, a first layer of the plural layers includes the first phosphor and does not include the second phosphor, and a second layer of the plural layers includes the second phosphor and does not include the first phosphor.
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