Substrate processing apparatus, substrate processing method, and chemical liquid

Patent metadata

Field	Value
Publication number	US-11545367-B2
Application number	US-202117154049-A
Country	US
Kind code	B2
Filing date	Jan 21, 2021
Priority date	Jan 23, 2020
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

First claim

What is claimed is:

1. A substrate processing system comprising:
a substrate rotator configured to hold and rotate a substrate including a film of a metal formed on a surface thereof;
a first supply including a first tank containing a first processing liquid including a chelating agent and a solvent, the first supply being configured to supply the first processing liquid toward the substrate;
a second supply configured to supply a second processing liquid containing water toward the substrate; and
a controller configured to control an overall operation of the substrate processing system,
wherein the controller is configured to:
control the first supply to supply the first processing liquid toward the substrate while rotating the substrate by the substrate rotator, so as to generate a complex containing the metal and the chelating agent, and
after the complex is generated, control the second supply to supply the second processing liquid toward the substrate to dissolve the complex in the second processing liquid.

2. The substrate processing system according to claim 1 , wherein the second processing liquid is water or an aqueous solution.

3. The substrate processing system according to claim 1 , wherein the controller is configured to control the second supply to stop the supply of the second processing liquid when a liquid film of the second processing liquid is formed on an entire surface of the substrate.

4. The substrate processing system according to claim 1 , wherein the controller is configured to control the first supply and the second supply to alternately supply the first processing liquid and the second processing liquid, respectively, while rotating the substrate by the substrate rotator.

5. The substrate processing system according to claim 1 , further comprising:
a third supply configured to supply a third processing liquid that is water soluble toward the substrate,
wherein the controller is further configured to control the third supply to supply the third processing liquid toward the substrate to remove the chelating agent remaining on the substrate after the complex is generated and before the second processing liquid is supplied.

6. The substrate processing system according to claim 1 , wherein a temperature of the second processing liquid is controlled to 25° C. or less.

7. The substrate processing system according to claim 1 , further comprising:
a fourth supply configured to supply a fourth processing liquid capable of removing a foreign substance adhering to a surface of the film of the metal toward the substrate,
wherein the controller is further configured to control the fourth supply to supply the fourth processing liquid toward the substrate while rotating the substrate by the substrate rotator before the first processing liquid is supplied.

8. The substrate processing system according to claim 1 , wherein the substrate is continuously rotated to dry the surface of the substrate after the second processing liquid is supplied.

9. The substrate processing system according to claim 1 , wherein the controller is configured to control the first supply and the second supply to alternately supply the first processing liquid and the second processing liquid for a first number of times, respectively, while rotating the substrate by the substrate rotator,
after the alternate supplying of the first processing liquid and the second processing liquid for the first number of times, a first drying is performed on the surface of the substrate while continuing the rotation of the substrate, and
the alternate supplying and the first drying are repeated for a second number of times.

10. The substrate processing system according to claim 9 , wherein the first number of times of the alternate supplying is reduced as the number of the alternate supplying and the first drying increases.

Assignees

• Tokyo Electron Ltd

Inventors

• Sakazaki Tetsuya
• Kosugi Hitoshi

Classifications

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0422 Primary

  for wet etching · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/667

  by liquid etching only · CPC title