MEMS Structure with Graphene Component
US-2018057351-A1 · Mar 1, 2018 · US
US11542151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11542151-B2 |
| Application number | US-202016934236-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2020 |
| Priority date | Jun 30, 2017 |
| Publication date | Jan 3, 2023 |
| Grant date | Jan 3, 2023 |
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The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.
Opening claim text (preview).
What is claimed is: 1. A microelectromechanical systems (MEMS) apparatus, comprising: a base substrate; a conductive routing layer disposed over the base substrate; a bump feature disposed directly over the conductive routing layer, wherein opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer; a MEMS substrate bonded to the base substrate and comprising a MEMS device directly over the bump feature; an anti-stiction layer arranged on one or more of the bump feature and the MEMS device; and wherein the anti-stiction layer comprises a topmost surface that continuously extends between opposing outermost sidewalls of the anti-stiction layer, an entirety of the topmost surface being vertically above a top of the bump feature. 2. The MEMS apparatus of claim 1 , wherein the bump feature directly contacts an upper surface of the conductive routing layer. 3. The MEMS apparatus of claim 1 , wherein the opposing outermost sidewalls of the anti-stiction layer extend from a bottom of the anti-stiction layer to the topmost surface of the anti-stiction layer. 4. The MEMS apparatus of claim 1 , wherein the anti-stiction layer comprises a rough upper surface that faces the MEMS device. 5. The MEMS apparatus of claim 1 , further comprising: a conductive layer disposed directly between the bump feature and the anti-stiction layer. 6. The MEMS apparatus of claim 5 , wherein the conductive layer comprises a vertical segment extending along an outermost sidewall of the bump feature and a lateral segment extending outward from a sidewall of the vertical segment and away from the bump feature. 7. The MEMS apparatus of claim 5 , wherein the anti-stiction layer laterally extends past opposing outermost sidewalls of the conductive layer. 8. The MEMS apparatus of claim 5 , wherein the conductive layer laterally extends past opposing sides of the anti-stiction layer. 9. A microelectromechanical systems (MEMS) apparatus, comprising: a conductive routing layer over a base substrate; a bump feature disposed directly over an upper surface of the conductive routing layer; a dielectric material disposed over the base substrate on opposing sides of the bump feature; a MEMS substrate bonded to the base substrate by way of the dielectric material; an anti-stiction layer arranged directly over the bump feature, wherein the anti-stiction layer has outermost sidewalls that are disposed laterally between sidewalls of the dielectric material facing the bump feature; and a conductive layer disposed laterally and vertically directly between the bump feature and the anti-stiction layer. 10. The MEMS apparatus of claim 9 , wherein the outermost sidewalls of the anti-stiction layer are separated from the dielectric material by one or more non-zero distances that are directly over the conductive routing layer. 11. The MEMS apparatus of claim 9 , further comprising: one or more conductive vias extending vertically through the bump feature, wherein the anti-stiction layer continuously extends over topmost surfaces of the bump feature and the one or more conductive vias. 12. The MEMS apparatus of claim 9 , further comprising: a second anti-stiction layer directly contacting a lower surface of the MEMS substrate that is directly over the bump feature. 13. The MEMS apparatus of claim 12 , wherein the anti-stiction layer physically contacts the bump feature directly below the second anti-stiction layer. 14. The MEMS apparatus of claim 9 , wherein the outermost sidewalls of the anti-stiction layer are directly over a topmost surface of the conductive routing layer. 15. A microelectromechanical systems (MEMS) apparatus, comprising: a base substrate; a bump feature over the base substrate; a second bump feature over the base substrate, wherein the second bump feature is a closest neighboring bump feature of the bump feature; a bonding structure disposed over the base substrate, wherein the bonding structure laterally surrounds the bump feature; a MEMS substrate bonded to the base substrate by way of the bonding structure, wherein the MEMS substrate comprises a moveable MEMS device over the bump feature; and an anti-stiction layer arranged directly over and along one or more sidewalls of the bump feature and the second bump feature, wherein the anti-stiction layer is discontinuous between the bump feature and the second bump feature. 16. The MEMS apparatus of claim 15 , wherein the anti-stiction layer continuously extends from directly over the bump feature to an outer sidewall that is coupled to a bottom of the anti-stiction layer; and wherein the outer sidewall is laterally between the bump feature and the second bump feature and laterally separated from the bump feature by a non-zero lateral distance. 17. The MEMS apparatus of claim 15 , wherein the anti-stiction layer extends along a first sidewall, but not an opposing second sidewall, of the bump feature. 18. The MEMS apparatus of claim 15 , wherein the anti-stiction layer is asymmetrically disposed over the bump feature. 19. The MEMS apparatus of claim 15 , wherein the anti-stiction layer has opposing outermost sidewalls that both vertically extend to above a top of the bump feature. 20. The MEMS apparatus of claim 15 , further comprising: a conductive routing layer having a top surface that continuously extends from directly below the bump feature to directly below the second bump feature.
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