Qubits with ion implant Josephson junctions

Patent metadata

Field	Value
Publication number	US-11538977-B2
Application number	US-202017116125-A
Country	US
Kind code	B2
Filing date	Dec 9, 2020
Priority date	Dec 9, 2020
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

Techniques regarding qubit structures comprising ion implanted Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a strip of superconducting material coupling a first superconducting electrode and a second superconducting electrode. The strip of superconducting material can have a first region comprising an ion implant and a second region that is free from the ion implant.

First claim

What is claimed is:

1. An apparatus, comprising:
a strip of superconducting material coupling a first superconducting electrode on a substrate and a second superconducting electrode on the substrate, the strip of superconducting material having a first region comprising an ion implant and a second region that is free from the ion implant; and
a sacrificial layer within a first portion of the substrate that is below a second portion of the strip of superconducting material comprising the first region.

2. The apparatus of claim 1 , wherein a superconducting order parameter of the strip of superconducting material is smaller in the first region than in the second region.

3. The apparatus of claim 1 , wherein the first region is a Josephson junction of a superconducting qubit.

4. The apparatus of claim 1 , wherein the strip of superconducting material comprises a third region that comprises a second ion implant, and wherein the second region is positioned between the first region and the third region.

5. The apparatus of claim 4 , wherein the ion implant and the second ion implant are the same ion species.

6. The apparatus of claim 1 , wherein the strip of superconducting material comprises at least one material selected from a first group consisting of aluminum and niobium, and wherein the ion implant is a member selected from a second group consisting of: an aluminum ion, a tantalum ion, an iron ion, a tin ion, and a cobalt ion.

7. The apparatus of claim 1 , further comprising:
a metal layer positioned on the strip of superconducting material, wherein a metal of the metal layer and the ion implant comprise a same metallic element.

8. A method, comprising:
forming a Josephson junction of a superconducting qubit, wherein the forming comprises:
forming a first superconducting electrode on a substrate,
forming a second superconducting electrode on the substrate,
forming a strip of superconducting material by depositing superconducting material onto the substrate that couples the first superconducting electrode to the second superconducting electrode, and
implanting an ion into a region of the strip of superconducting material by depositing a metal mask onto the region of the strip of superconducting material, and exposing the metal mask to an ion beam.

9. The method of claim 8 , further comprising:
prior to forming the first superconducting electrode, the second superconducting electrode, and the strip of superconducting material on the substrate, forming a sacrificial layer within a portion of the substrate below where the region of the strip of superconducting material will be formed on the substrate forming the first superconducting electrode on the substrate.

10. The method of claim 9 , further comprising:
wherein forming the strip of superconducting material comprises depositing some of the superconducting material onto the sacrificial layer.

11. The method of claim 9 , wherein the sacrificial layer shields the substrate from the ion beam.

12. The method of claim 8 , wherein the strip of superconducting material comprises at least one material selected from a first group consisting of aluminum and niobium, and wherein the ion selected from a second group consisting of: an aluminum ion, a tantalum ion, an iron ion, a tin ion, and a cobalt ion.

13. A method, comprising:
forming a sacrificial layer within a first portion of a substrate;
forming a first superconducting electrode and a second superconducting electrode on the substrate;
forming a strip of superconducting material that couples the first superconducting electrode to the second superconducting electrode, comprising depositing a second portion of the strip of superconducting material on the sacrificial layer; and
forming a Josephson junction in the strip of superconducting material by implanting an ion into the strip of superconducting material.

14. The method of claim 13 , further comprising:
depositing a metal mask onto the second portion of the strip of superconducting material; and
exposing the metal mask to an ion beam.

15. The method of claim 13 , wherein the forming the Josephson junction comprises exposing a region in the second portion of the strip of superconducting material to an ion beam, wherein the sacrificial layer shields the substrate from the ion beam.

16. The method of claim 13 , wherein the strip of superconducting material comprises at least one material selected from a first group consisting of aluminum and niobium, and wherein the ion selected from a second group consisting of: an aluminum ion, a tantalum ion, an iron ion, a tin ion, and a cobalt ion.

17. The method of claim 14 , wherein a metal of the metal mask and an ion element of the ion beam comprise a same metallic element.

18. The method of claim 15 , wherein a superconducting order parameter of the strip of superconducting material is suppressed in the region.

19. The method of claim 8 , wherein a metal of the metal mask and an ion element of the ion beam comprise a same metallic element.

20. The method of claim 8 , wherein a superconducting order parameter of the strip of superconducting material is suppressed in the region.

Assignees

• IBM

Inventors

• Gordon Ryan T
• Rodbell Kenneth P
• Sandstrom Robert L
• Sleight Jeffrey W

Classifications

• H01L39/2493

  Electricity · mapped topic

• H01L39/12

  Electricity · mapped topic

• H01L39/223 Primary

  Electricity · mapped topic

• H01L39/2406

  Electricity · mapped topic

• H10N60/0156

  of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium · CPC title