Substrate processing method and substrate processing system

Patent metadata

Field	Value
Publication number	US-11538693-B2
Application number	US-201916722147-A
Country	US
Kind code	B2
Filing date	Dec 20, 2019
Priority date	Dec 28, 2018
Publication date	Dec 27, 2022
Grant date	Dec 27, 2022

Abstract

A substrate processing method is provided. In the method, a substrate is provided. A monomer that is chemically bonded to the substrate is supplied onto the substrate. An initiator for polymerizing the monomer is supplied to the substrate having the supplied monomer thereon, thereby forming a polymer film.

First claim

What is claimed is:

1. A substrate processing method, comprising:
(a) providing a substrate having a first region containing silicon nitride and a second region containing silicon oxide;
(b) supplying a monomer that is selectively and chemically bonded to the first region of the substrates;
(c) supplying an initiator for polymerizing the monomer to the substrate having the supplied monomer thereon, thereby forming a polymer film; and
(d) etching the second region while protecting the first region by the polymer film.

2. The substrate processing method as claimed in claim 1 , further comprising:
terminating the first region with hydrogen before (b).

3. The substrate processing method as claimed in claim 1 , further comprising:
removing a residue on the substrate before (b).

4. The substrate processing method as claimed in claim 1 , further comprising:
removing impurities on the substrate between (b) and (c).

5. The substrate processing method as claimed in claim 1 , further comprising:
baking the substrate between (b) and (c).

6. The substrate processing method as claimed in claim 1 , wherein the monomer contains an alkenyl group.

7. The substrate processing method as claimed in claim 6 , wherein the alkenyl group is a vinyl group.

8. The substrate processing method as claimed in claim 1 , wherein the initiator is a radical initiator.

9. The substrate processing method as claimed in claim 8 ,
wherein the radical initiator is at least one selected from the group consisting of an inorganic peroxide, an organic peroxide, and an azo compound.

10. The substrate processing method as claimed in claim 1 , further comprising:
repeating a cycle including (b) and (c).

11. The substrate processing method as claimed in claim 10 , wherein a supply amount and a polymerizing condition of the monomer in (b) and (c) are changed with respect to each cycle.

12. The substrate processing method as claimed in claim 1 , wherein the monomer has a conjugated heterocyclic compound structure.

13. The substrate processing method as claimed in claim 12 , wherein the conjugated heterocyclic compound structure is a structure having an unshared electron pair.

14. The substrate processing method as claimed in claim 13 , wherein a conjugated heterocyclic compound forming the conjugated heterocyclic compound structure is at least one selected from the group consisting of a thiol, an azole, and an oxole.

15. A substrate processing method, comprising:
(a) providing a substrate including:
a wafer;
a raised region formed to be raised from the wafer and forming a recess that is defined by the raised region;
a first region disposed on a surface of the raised region; and
a second region disposed so as to fill the recess, said first region containing silicon nitride and the second region containing silicon oxide;

(b) etching the second region until the first region is exposed;
(c) supplying a monomer that is selectively and chemically bonded to the first region of the substrate;
(d) supplying an initiator for polymerizing the monomer to the substrate having the supplied monomer thereon, thereby forming a polymer film; and
(e) etching the second region while protecting the first region by the polymer film.

16. A substrate processing method, comprising:
(a) providing a substrate having a first region containing silicon or metal and a second region that differs in composition from a composition of the first region;
(b) supplying a monomer that is chemically bonded to the first region of the substrate;
(c) supplying an initiator for polymerizing the monomer to the substrate having the supplied monomer thereon, thereby forming a polymer film; and
(d) etching the second region while protecting the first region by the polymer film.

17. The substrate processing method as claimed in claim 16 , wherein the first region contains silicon nitride and the second region contains at least one of silicon oxide, aluminum oxide, or titanium oxide.

Assignees

• Tokyo Electron Ltd

Inventors

• Asako Ryuichi

Classifications

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• B05D2203/30

  Other inorganic substrates, e.g. ceramics, silicon · CPC title

• B05D1/60

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• B05D1/36 Primary

  Successively applying liquids or other fluent materials, e.g. without intermediate treatment · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title