Substrate cleaning compositions, substrate cleaning method and substrate treating apparatus
US-2020115660-A1 · Apr 16, 2020 · US
US11530375B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11530375-B2 |
| Application number | US-201916600166-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2019 |
| Priority date | Oct 11, 2018 |
| Publication date | Dec 20, 2022 |
| Grant date | Dec 20, 2022 |
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A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.
Opening claim text (preview).
What is claimed is: 1. A method of processing a substrate, the method comprising: rotating the substrate; applying a cleaning composition to the substrate while the substrate is rotated, the cleaning composition including an organic solvent having a Hansen solubility parameter for polystyrene latex between 5 and 12; and supplying a processing fluid comprising a mixture of the cleaning composition and a supercritical fluid to the substrate to which the cleaning composition was applied to process the substrate, wherein the cleaning composition is provided by dissolving an etching compound comprising fluorine in the organic solvent, and wherein the cleaning composition further includes a binder comprising a compound including phosphorus. 2. The method of claim 1 , wherein the organic solvent includes one of n-butyl acetate, diethyl malonate, isopropyl acetate, or a combination thereof. 3. The method of claim 1 , wherein the organic solvent has a surface tension of 30 dyn/cm or less. 4. The method of claim 1 , wherein the binder includes trimethyl phosphate. 5. The method of claim 1 , wherein the cleaning composition is provided in an anhydrous composition containing no water as a component. 6. The method of claim 1 , further comprising: rinsing the substrate to which the cleaning composition is applied with the organic solvent before the supplying of the processing fluid. 7. The method of claim 1 , wherein the etching compound includes hydrogen fluoride. 8. The method of claim 1 , wherein the applying the cleaning composition to the substrate, while the substrate is rotated, is performed in a first process chamber, and wherein the supplying of the processing fluid is performed in a second process chamber, which is spaced apart from the first process chamber.
using mainly spraying means, e.g. nozzles · CPC title
Cleaning only by supercritical fluids · CPC title
containing oxygen · CPC title
the liquid having chemical or dissolving effect · CPC title
containing phosphorus · CPC title
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