Method for manufacturing semiconductor device and semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11521850-B2
Application number	US-201916440740-A
Country	US
Kind code	B2
Filing date	Jun 13, 2019
Priority date	Aug 17, 2018
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer on a substrate in a chamber; and
forming an insulation layer on the semiconductor layer,
wherein forming the insulation layer comprises:
(a) it precursors that include a metal and at least one ligand into a surface of the semiconductor layer, wherein the precursor reacts with a hydroxyl group at a surface of the semiconductor layer;
(b) removing precursors that are not adsorbed onto the semiconductor layer, wherein only portions of the precursor combined with oxygen ions from the hydroxyl group remain on the semiconductor layer;
(c) injecting reactants onto the surface of the semiconductor layer, wherein the reactants include a first element and a second element; and
(d) removing residual reactants, wherein only the metals and the first elements that are adsorbed to the surface of the semiconductor layer remain,

wherein the ligand separates from the precursor,
the metal of the precursor and the first element of the reactant react with each other, and
the ligand of the precursor and the second element of the reactant react with each wherein a reaction product is formed,

wherein the semiconductor layer comprises a semiconductor material that has a layered structure, and
wherein a density of the precursors adsorbed to the surface of the semiconductor layer is increased by increasing an injection pressure of the precursors, and
steps (a) to (d) are carried out at a temperature from about 300° C. to about 500° C.

2. The method for manufacturing a semiconductor device of claim 1 ,
wherein the semiconductor material comprises at least one of a transition metal dichalcogenide (TMDC), graphene, or black phosphorous,
wherein the TDMC has a chemical formula of MX 2 , where M is one of Mo, W, Zr, or Re, and X is one of S, Se, or Te.

3. The method for manufacturing a semiconductor device of claim 1 ,
wherein the precursors are injected at a pressure of about 0.01 Torr to about 100 Torr.

4. The method for manufacturing a semiconductor device of claim 1 ,
wherein the insulation layer comprises at least one of an oxide represented by one of M 1 x O a or M 1 x M 2 y O a , a nitride represented by M 1 x N b , or an oxynitride represented by M 1 x O a N b ,
wherein M 1 and M 2 are metals, and x>0, y>0, a>0, and b>0.

5. The method for manufacturing a semiconductor device of claim 4 ,
wherein the precursor comprises the same metal as the metal included in the insulation layer.

6. The method for manufacturing a semiconductor device of claim 5 ,
wherein the precursor comprises at least one of AlCl 3 , AlMe 2 Cl, AlMe 2 OiPr, AlEt 3 , Al(OnPr) 3 , Me 3 N:AlH 3 , AlMe 2 H, Me 2 EtN:AlH 3 , ZrCl 4 , ZrI 4 , ZrCp 2 Cl 2j , Zr(OiPr) 2 (dmae) 2 , Zr(OtBu) 4 , Zr(NMe 2 ) 4 , HfCl 4 , HfI 4 , HfCl 2 [N(SiMe 3 )] 2 , Hf(OtBu) 4 , Hf(OtBu) 2 (mmp) 2 , Hf(mmp) 4 , Hf(ONEt 2 ) 4 , Hf(NMe 2 ) 4 , Hf(NO 3 ) 4 , YCp 3 , Y(CpMe) 3 , Y(thd) 3 , La(thd) 3 , La[N(SiMe 3 ) 2 ] 3 , TaF 5 , TaCl 5 , TaI 5 , Ta(OEt) 5 , Ta(OEt) 4 (dmae), Ta(NMe 2 ) 5 , Ta(NMe 2 ) 5 , Ta(NEt)(NEt 2 ) 3 , Ta(NEt 2 ) 5 , Ta(NtBu) (tBu 2 pz) 3 , Ta(NtBu)(iPrAMD) 2 NMe 2 , MgCp 2 , Mg(thd) 2 , ZnCl 2 , ZnMe 2 , ZnEt 2 , Zn(OAc) 2 , TiCl 4 , TiI 4 , Ti(OMe) 4 , Ti(OiPr) 4 , SiCl 4 , SiCl 3 H, SiCl 2 H 2 , Si(OEt) 4 , HMDSh, Si(NCO) 4 , MeOSi(NCO) 3 , Si 2 Cl 6 , or SiH 4 .

7. The method for manufacturing a semiconductor device of claim 4 ,
wherein the insulation layer comprises at least one of Y 2 O 3 , Ta 2 O, Ta 2 O 5 , ZnO, Nb 2 O 5 , SiO 2 , TiN, SiN, HfON, SiON, or STO (SrTiO 3 ).

8. The method for manufacturing a semiconductor device of claim 1 ,
wherein the insulation layer has a thickness of from about 0.5 nm to about 4 nm.

9. The method for manufacturing a semiconductor device of claim 1 ,
wherein the insulation layer comprises at least one atomic layer.

10. The method for manufacturing a semiconductor device of claim 1 ,
wherein the semiconductor layer has a thickness of less than about 1 nm.

11. The method for manufacturing a semiconductor device of claim 1 ,
wherein the reactant is an oxidizer.

12. The method for manufacturing a semiconductor device of claim 1 , wherein
step (a) comprises adsorbing a metal of the precursor to the surface of the semiconductor layer, and
step (c) comprises forming the insulation layer on the surface of the semiconductor layer from a reaction between the metal of the precursor and the reactant.

13. The method for manufacturing a semiconductor layer of claim 1 , wherein
a surface roughness of a surface where the semiconductor layer contacts the insulation layer is from about 2 nm to 3.2 nm, and
the surface roughness is calculated by calculating plurality of absolute values of vertical heights from a center line of n curved lines on the surface, calculating a mean value of squares of the plurality of absolute values, and taking a positive square root of the mean value.

Assignees

• Samsung Display Co Ltd
• Yonsei Univ Univ Industry Foundation Uif

Inventors

• Lim Jun Hyung
• Kim Hyung Jun
• Lee Sun Hee
• Seo Seung Gi
• Woo Whang Je

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title