Cleaning method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11517943-B2
Application number	US-201917258431-A
Country	US
Kind code	B2
Filing date	Jul 1, 2019
Priority date	Jul 12, 2018
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

First claim

What is claimed is:

1. A cleaning method comprising:
setting a pressure in a chamber to a predetermined vacuum pressure;
separating contaminants from a stage in the chamber by supplying a first gas that forms a shock wave from a first gas port of a first gas supply toward the stage, into the chamber at the predetermined vacuum pressure; and
exhausting the separated contaminants to outside of the chamber by supplying a second gas that does not form the shock wave toward the stage from a second gas supply comprising a first gas nozzle disposed on an outer peripheral side wall of a gas supply pipe provided in a center of the chamber,
wherein the stage is configured to be rotatable and rotated while performing the supplying the first gas and the supplying the second gas.

2. The cleaning method according to claim 1 , wherein, in the supplying the first gas, the first gas is intermittently supplied to form the shock wave.

3. The cleaning method according to claim 1 , wherein the supplying the first gas and the supplying the second gas are simultaneously performed.

4. The cleaning method according to claim 1 , wherein the supplying the first gas and the supplying the second gas are alternately performed.

5. The cleaning method according to claim 1 , wherein the chamber is exhausted while performing the supplying of first gas and the supplying the second gas.

6. The cleaning method according to claim 1 , wherein the supplying the first gas is performed after a distance between the first gas supply and the stage is adjusted.

7. The cleaning method according to claim 1 , wherein a valve is provided immediately above the chamber to open/close a gas pipe connected to the first gas supply, and
in the supplying the first gas, the valve is opened to supply the first gas from the gas pipe into the first gas supply.

8. The cleaning method according to claim 1 , wherein the second gas supply further comprises a second gas nozzle provided on a side wall of the chamber.

9. The cleaning method according to claim 1 , wherein the first gas has an atmospheric pressure or higher.

10. The cleaning method according to claim 1 , wherein, in the supplying the first gas, the first gas is supplied in a state where a pressure in a gas pipe connected to the first gas supply and supplying the first gas is five times or more the pressure in the chamber.

11. The cleaning method according to claim 1 , wherein the stage includes a plurality of substrate placing portions that holds a plurality of substrates, respectively, and
the plurality of substrates placed on the substrate placing portions are simultaneously processed while rotating the stage after the cleaning method is performed.

12. The cleaning method according to claim 1 , wherein the first gas and the second gas are inert gases.

13. The cleaning method according to claim 8 , wherein at least one of the first gas nozzle and the second gas nozzle has a tapered-shape that extends toward a gas port.

14. The cleaning method according to claim 8 , wherein, when an angle of a gas hole of at least one of the first gas nozzle and the second gas nozzle which is positioned straightly downward of the gas nozzle is 0°, an angle of the gas hole (θ) is formed at a position satisfying −90°<θ<90° in a circumferential direction.

15. The cleaning method according to claim 8 , further comprising:
exhausting the second gas from one or more exhaust ports provided outside the center of the chamber.

16. The cleaning method according to claim 8 , further comprising:
exhausting the second gas from one or more exhaust ports provided in the center of the chamber or below the stage.

Assignees

• Tokyo Electron Ltd

Inventors

• Ikeda Kyoko
• Dobashi Kazuya

Classifications

• H10P14/60

  of insulating materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/4405 Primary

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• C23C16/0227

  by cleaning or etching · CPC title