Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

Patent metadata

Field	Value
Publication number	US-11515264-B2
Application number	US-201916421707-A
Country	US
Kind code	B2
Filing date	May 24, 2019
Priority date	May 25, 2018
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

A method for processing a semiconductor wafer is proposed. The method may include reducing a thickness of the semiconductor wafer. A carrier structure is placed on a first side of the semiconductor wafer, e.g. before or after reducing the thickness of the semiconductor wafer. The method further includes providing a support structure on a second side of the semiconductor wafer opposite to the first side, e.g. after reducing the thickness of the semiconductor wafer. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

First claim

What is claimed is:

1. A method for processing a semiconductor wafer, the method comprising:
welding at least one support structure onto the semiconductor wafer; and
reducing a thickness of the semiconductor wafer before or after welding the at least one support structure onto the semiconductor wafer.

2. The method of claim 1 , wherein welding the at least one support structure onto the semiconductor wafer comprises:
placing the at least one support structure on the semiconductor wafer; and
irradiating light through the at least one support structure or through the semiconductor wafer to form a weld region,
wherein the weld region is an interface between the at least one support structure and the semiconductor wafer, and/or a joining structure between the at least one support structure and the semiconductor wafer.

3. The method of claim 2 , wherein light of a first wavelength is irradiated through the at least one support structure, and wherein at least 50% of the light of the first wavelength impinging on the support structure is transmitted through the support structure and reaches the weld region.

4. The method of claim 1 , further comprising:
before welding the at least one support structure, forming an absorption region on the semiconductor wafer or on the at least one support structure.

5. The method of claim 4 , wherein the absorption region comprises a silicide layer.

6. The method of claim 5 , wherein the silicide layer is a nickel silicide layer, a cobalt silicide layer or a titanium silicide layer.

7. The method of claim 4 , wherein the absorption region comprises a polysilicon layer or an amorphous silicon layer.

8. The method of claim 4 , wherein forming the absorption region comprises implanting ions so that the absorption region comprises a doping concentration of at least 1·10 19 cm 3 .

9. The method of claim 4 , further comprising:
before reducing the thickness of the semiconductor wafer, forming an electrical element structure of a semiconductor device at a front side of the semiconductor wafer,
wherein forming the electrical element structure comprises of forming a polycrystalline silicon layer and/or forming a metallization layer,
wherein the absorption region comprises a part of the polycrystalline silicon layer and/or the metallization layer.

10. The method of claim 1 , wherein the at least one support structure comprises a ring structure or a grid structure.

11. The method of claim 1 , wherein the at least one support structure comprises at least one ring segment structure and/or at least one circular structure.

12. The method of claim 1 , wherein the at least one support structure is welded to a front side of the semiconductor wafer, and wherein the method further comprises:
before reducing the thickness of the semiconductor wafer, placing a carrier structure at the front side of the semiconductor wafer.

13. The method of claim 12 , further comprising:
before placing the carrier structure at the front side, filling a gap between the semiconductor wafer and the carrier structure with foam material.

14. The method of 12 , further comprising:
after reducing the thickness of the semiconductor wafer, removing the carrier structure.

15. The method of claim 1 , further comprising:
after welding the at least one support structure onto the semiconductor wafer, processing the semiconductor wafer at a temperature of at least 400° C.

Assignees

• Infineon Technologies Ag

Inventors

• Santos Rodriguez Francisco Javier
• Breymesser Alexander
• Griebl Erich
• Knabl Michael
• Kuenle Matthias
• Moser Andreas
• Rupp Roland
• Schulze Hans-Joachim
• Sgouridis Sokratis
• Voss Stephan

Classifications

• H10W76/40

  Fillings or auxiliary members in containers, e.g. centering rings (fillings or auxiliary members for thermal protection or control in containers or encapsulations H10W40/70) · CPC title

• H10W42/121 Primary

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H01L23/16

  Electricity · mapped topic

• H01L23/562 Primary

  Electricity · mapped topic