Methods for enhancing selectivity in SAM-based selective deposition

Patent metadata

Field	Value
Publication number	US-11515155-B2
Application number	US-202117197866-A
Country	US
Kind code	B2
Filing date	Mar 10, 2021
Priority date	Nov 18, 2017
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

First claim

What is claimed is:

1. A method of selective deposition comprising:
providing a patterned substrate comprising a first metal surface and a second dielectric surface;
exposing the patterned substrate to a first SAM molecule to form a first SAM layer on the second surface and first SAM agglomerates on the substrate;
exposing the substrate to a plurality of reactants separately to selectively deposit a dielectric layer on the first surface over the second surface;
removing the first SAM layer from the second surface;
removing the first SAM agglomerates from the substrate;
exposing the substrate to a second SAM molecule to form a second SAM layer on the dielectric layer and the second surface and second SAM agglomerates on the substrate; and
exposing the substrate to a plurality of reactants separately to selectively deposit a dielectric layer on the first surface over the second surface and the dielectric layer.

2. The method of claim 1 , wherein the first SAM agglomerates and the second SAM agglomerates are formed on the first surface and the second surface.

3. The method of claim 1 , wherein the first SAM agglomerates and the second SAM agglomerates do overlap the same portions of the substrate.

4. The method of claim 1 , wherein the first SAM layer and the second SAM layer contain substantially no voids.

5. The method of claim 1 , wherein the first SAM layer is removed by exposing the substrate to an oxidizing plasma.

6. The method of claim 5 , wherein the oxidizing plasma comprises oxygen, ozone, water or peroxide.

7. The method of claim 5 , wherein the oxidizing plasma is generated remotely.

8. The method of claim 1 , wherein the first SAM agglomerates are removed through an ashing process.

9. The method of claim 1 , further comprising:
removing the second SAM layer from the dielectric layer and the second surface; and
removing the second SAM agglomerates from the substrate.

Assignees

• Applied Materials Inc

Inventors

• Ke Chang
• Jackson Michael S
• Wu Liqi
• Zhou Lei
• Zhang Shuyi
• Thompson David
• Ma Paul F
• Liu Biao
• Pan Cheng

Classifications

• H10P14/6348

  Liquid ALD · CPC title

• H10P14/61

  using masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6519

  the substance being oxygen · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title