Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11511321-B2
Application number	US-201916662020-A
Country	US
Kind code	B2
Filing date	Oct 23, 2019
Priority date	Oct 25, 2018
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

First claim

What is claimed is:

1. A substrate processing method comprising:
forming a liquid film by supplying a first liquid to a substrate;
replacing the liquid film with a second liquid, different from the first liquid, by supplying the second liquid to a center area of the substrate so that the second liquid impinges on the liquid film formed on the center area of the substrate; and
after starting to supply the second liquid to the center area of the substrate, starting to supply a third liquid for a predetermined time diagonally with respect to an upper surface of the substrate during the supplying of the second liquid,
wherein the first liquid and the third liquid is the same liquid,
wherein in the supplying the third liquid, the third liquid is injected radially outwards from the center of the substrate toward an outer edge of the substrate.

2. The substrate processing method of claim 1 ,
wherein in the supplying the third liquid, the third liquid is injected toward a predetermined position that is outside a position at which the second liquid is injected and the liquid film is replaced with the second liquid.

3. The substrate processing method of claim 1 ,
wherein in the forming the liquid film, the first liquid is injected diagonally in the same direction as a rotational direction of the substrate.

4. The substrate processing method of claim 1 ,
wherein in the forming the liquid film, the first liquid is injected on both the center area of the substrate and a middle area outside the center area simultaneously.

5. The substrate processing method of claim 1 ,
wherein the first liquid is de-ionized water (DIW).

6. The substrate processing method of claim 1 ,
wherein the second liquid is isopropyl alcohol (IPA).

7. The substrate processing method of claim 4 ,
wherein a first portion of the first liquid is injected at a first injection flow rate toward the center area of the substrate,
wherein a second portion of the first liquid is injected at a second injection flow rate toward the middle area of the substrate, and
wherein a ratio of the first injection flow rate to the second injection flow rate is a one-to-one ratio.

8. A substrate processing method comprising:
supplying a first liquid to a substrate, wherein a liquid film is formed on the substrate;
replacing the liquid film with a second liquid, different from the first liquid, by supplying the second liquid to a center area of the substrate so that the second liquid impinges on the liquid film formed on the center area of the substrate; and
after starting the supplying of the second liquid, starting to supply a third liquid diagonally with respect to an upper surface of the substrate to a first position outside where a portion of the liquid film is replaced with the second liquid,
wherein the first liquid and the third liquid are the same liquid.

9. The substrate processing method of claim 8 ,
wherein the third liquid is supplied for a predetermined time during the supplying the second liquid.

10. The substrate processing method of claim 8 ,
wherein in the forming the liquid film, the first liquid is injected diagonally in the same direction as a rotational direction of the substrate.

11. The substrate processing method of claim 8 ,
wherein in the supplying the third liquid, the third liquid is injected radially outwards from the center of the substrate toward an outer edge of the substrate.

12. The substrate processing method of claim 9 ,
wherein for the predetermined time, the first position is moved toward an outer edge of the substrate, and
wherein the third liquid is supplied until the first position reaches the outer edge of the substrate.

Assignees

• Semes Co Ltd

Inventors

• Kim Young Jin
• Yu Jin Tack
• Jung Bu Young
• Bang Byung Sun
• Oh Seung Hoon
• Choi Young Jun
• Woo Jong Hyeon

Classifications

• H10P72/0408 Primary

  for drying · CPC title

• H10P70/50

  characterised by the part to be cleaned · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title