Substrate etching method for manufacturing mask

Patent metadata

Field	Value
Publication number	US-11508908-B2
Application number	US-201916663287-A
Country	US
Kind code	B2
Filing date	Oct 24, 2019
Priority date	Nov 13, 2018
Publication date	Nov 22, 2022
Grant date	Nov 22, 2022

Abstract

A method for manufacturing a mask may include the following steps: preparing a substrate; providing a first coating, which may be optically transparent, may cover a covered portion of the substrate, and may expose exposed portions of the substrate; forming a scattering layer between the first coating layer and the covered portion of the substrate; and removing the exposed portions of the substrate to form mask holes.

First claim

What is claimed is:

1. A method for manufacturing a mask, the method comprising:
preparing a substrate;
providing a first coating, which is optically transparent, covers a covered portion of the substrate, and exposes exposed portions of the substrate;
irradiating a first laser through both a material of the first coating and at least one opening of the first coating onto both the covered portion of the substrate and the exposed portions of the substrate for forming a scattering layer between the first coating and the covered portion of the substrate, wherein the scattering layer exposes the exposed portions of the substrate between portions of the scattering layer that are covered by the first coating and overlap the covered portion of the substrate; and
removing the exposed portions of the substrate to form mask holes.

2. The method of claim 1 , further comprising:
preparing a material layer; and
patterning the material layer to form the first coating.

3. The method of claim 1 , wherein the forming of the scattering layer comprises:
producing particles on the substrate by irradiating the substrate with the first laser, wherein a material of the particles is identical to a material of the substrate, wherein the particles include a first particle set and a second particle set, wherein the first particle set is positioned on the covered portion of the substrate, and wherein the second particle set is positioned on the exposed portions of the substrate and is exposed by the first coating; and
removing the second particle set,
wherein the first particle set is covered by the first coating, and wherein the scattering layer comprises the first particle set.

4. The method of claim 3 , wherein the first particle set remains between the first coating and the covered portion of the substrate after the second particle set has been removed.

5. The method of claim 3 , wherein the producing of the particles on the substrate comprises: positioning a focal point of the first laser between the first coating and the substrate.

6. The method of claim 3 , wherein the first laser has a diameter of 2 μm or smaller.

7. The method of claim 3 , wherein the first coating has a thickness of 1.5 μm or thicker.

8. The method of claim 3 , wherein the removing of the exposed portions of the substrate comprises: irradiating the substrate with a second laser.

9. The method of claim 8 , wherein a maximum diameter of the second laser is larger than a maximum diameter of the first laser.

10. The method of claim 8 , wherein the maximum diameter of the second laser is larger than or equal to 10 μm.

11. The method of claim 8 , wherein a focal length of the first laser is shorter than a focal length of the second laser.

12. The method of claim 11 , wherein the first laser and the second laser have a same wavelength band.

13. The method of claim 1 , further comprising: removing the first coating and the scattering layer after the removing of the exposed portions of the substrate.

14. The method of claim 1 , wherein the first coating comprises a negative photoresist.

15. The method of claim 1 , wherein the first coating includes openings before the first coating is disposed on the substrate, and wherein the openings expose the exposed portions of the substrate.

16. The method of claim 1 , wherein the substrate comprises a metallic material.

17. The method of claim 1 , further comprising: forming a second coating on the scattering layer and the substrate after the forming of the scattering layer,
wherein an optical transparency of the second coating is lower than an optical transparency of the first coating.

18. The method of claim 17 , further comprising: removing the first coating, the scattering layer, and the second coating after the removing of the exposed portions of the substrate.

19. The method of claim 17 , wherein the second coating comprises a positive photoresist.

20. A method for manufacturing a mask, the method comprising:
preparing a substrate;
providing a first coating on the substrate, the first coating being optically transparent, covering a covered portion of the substrate, and exposing exposed portions of the substrate;
irradiating a first laser through both a material of the first coating and at least one opening of the first coating onto both the covered portion of the substrate and the exposed portions of the substrate to form a scattering layer between the first coating and the substrate, wherein the scattering layer exposes the exposed portions of the substrate between portions of the scattering layer that are covered by the first coating and overlap the covered portion of the substrate; and
irradiating a second laser to etch the exposed portions of the substrate, wherein a maximum diameter of the second laser is larger than a maximum diameter of the first laser.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Jeongkuk
• Hwang Kyuhwan

Classifications

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/691 Primary

  for Group V materials or Group III-V materials · CPC title

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/56

  Electricity · mapped topic