Method of forming display electrodes and pixel defining layers without an increase of masks

Patent metadata

Field	Value
Publication number	US-11502145-B2
Application number	US-202016899124-A
Country	US
Kind code	B2
Filing date	Jun 11, 2020
Priority date	Oct 11, 2019
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

A method of manufacturing a light-emitting display apparatus and a light-emitting display apparatus are provided. The method includes forming a first photosensitive layer on a conductive material layer, forming a pixel electrode by etching the conductive material layer by using the first photosensitive layer as a mask, ashing the first photosensitive layer disposed on the pixel electrode, forming a pixel defining layer that covers an edge portion of the pixel electrode and includes a first opening overlapping the ashed first photosensitive layer, removing the ashed first photosensitive layer disposed in the first opening, forming an intermediate layer including a functional layer and an emission layer on the pixel defining layer, and forming an opposite electrode on the intermediate layer.

First claim

What is claimed is:

1. A method of manufacturing a light-emitting display apparatus, the method comprising:
forming a first photosensitive layer on a conductive material layer;
forming a pixel electrode by etching the conductive material layer by using the first photosensitive layer as a mask;
ashing the first photosensitive layer disposed on the pixel electrode;
forming a pixel defining layer that covers an edge portion of the pixel electrode and includes a first opening overlapping the ashed first photosensitive layer;
removing the ashed first photosensitive layer disposed in the first opening;
forming an intermediate layer including a functional layer and an emission layer on the pixel defining layer; and
forming an opposite electrode on the intermediate layer.

2. The method of claim 1 , wherein the forming of the pixel defining layer comprises:
forming a color material layer on the ashed first photosensitive layer;
exposing a part of the color material layer; and
forming the first opening by developing the exposed part of the color material layer.

3. The method of claim 2 , wherein the pixel defining layer comprises a negative photosensitive material.

4. The method of claim 3 , further comprising:
curing the pixel defining layer after the forming of the first opening.

5. The method of claim 3 , wherein the pixel defining layer further comprises a color pigment or carbon black.

6. The method of claim 1 , wherein a shape of the first opening is substantially same as a shape of the pixel electrode in a plan view.

7. The method of claim 1 , further comprising:
forming a thin-film transistor; and
forming an insulating layer between the thin-film transistor and the pixel electrode, wherein
the forming of the insulating layer includes forming a contact hole for electrical connection between the thin-film transistor and the pixel electrode, and
the first opening overlaps the contact hole.

8. The method of claim 7 , further comprising:
forming an optical functional layer comprising a color filter overlapping the first opening and a black matrix adjacent to the color filter, wherein
the black matrix overlaps the contact hole.

9. The method of claim 1 , further comprising:
forming a second photosensitive layer on the conductive material layer; and
forming a wiring by etching the conductive material layer using the second photosensitive layer as a mask.

10. The method of claim 9 , further comprising:
ashing the second photosensitive layer disposed on the wiring, wherein
the forming of the pixel defining layer comprises forming a second opening overlapping the ashed second photosensitive layer and spaced apart from the first opening.

11. The method of claim 10 , further comprising:
removing the ashed second photosensitive layer from the second opening.

12. The method of claim 11 , further comprising:
forming an insulating layer overlapping the second opening and disposed between the wiring and the intermediate layer.

13. The method of claim 11 , further comprising:
forming a hole in a portion of the functional layer, which overlaps the wiring,
wherein the opposite electrode is formed to be in electrical contact with the wiring through the hole.

Assignees

• Samsung Display Co Ltd

Inventors

• Park Gwuihyun
• Hong Pilsoon
• PARK Chulwon
• Sugitani Koichi
• Cho Hyungbin
• Kim Hyein

Classifications

• H01L2227/323

  Electricity · mapped topic

• H01L27/3258

  Electricity · mapped topic

• H01L27/3246 Primary

  Electricity · mapped topic

• H01L27/322

  Electricity · mapped topic

• H01L27/3248

  Electricity · mapped topic