Semiconductor device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-9397255-B2
Application number	US-201414584013-A
Country	US
Kind code	B2
Filing date	Dec 29, 2014
Priority date	May 16, 2008
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

First claim

What is claimed is:

1. A semiconductor device comprising
a first conductive film;
a second conductive film;
a third conductive film over and in contact with the first conductive film;
a fourth conductive film over and in contact with the second conductive film;
a first insulating film over the first conductive film, the third conductive film and the fourth conductive film;
a pixel electrode over the third conductive film with the first insulating film therebetween; and
a transistor comprising a semiconductor film, a gate electrode, a source electrode, a drain electrode and a gate dielectric,
wherein the first conductive film and the second conductive film are transparent, and the third conductive film and the fourth conductive film are not transparent,
wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,
wherein the semiconductor film is an oxide comprising indium (In), gallium (Ga) and zinc (Zn),
wherein a first portion of the second conductive film works as the gate electrode,
wherein a first portion of the pixel electrode works as an upper electrode of a storage capacitor,
wherein a first portion of the first conductive film works as a lower electrode of the storage capacitor,
wherein a first portion of the first insulating film works as a dielectric of the storage capacitor,
wherein the storage capacitor is transparent such that a light passes through the storage capacitor, and
wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive film.

2. The semiconductor device according to claim 1 ,
wherein a second portion of the third conductive film is included in a capacitor line, and
wherein a second portion of the fourth conductive film is included in a gate line.

3. The semiconductor device according to claim 2 , wherein the semiconductor film does not overlap with the fourth conductive film.

4. The semiconductor device according to claim 1 , wherein a second portion of the first insulating film is the gate dielectric of the transistor.

5. The semiconductor device according to claim 1 , further comprising a second insulating film between the first insulating film and the pixel electrode.

6. The semiconductor device according to claim 1 , wherein the semiconductor film is provided over the first insulating film.

7. The semiconductor device according to claim 1 , further comprising:
a fifth conductive film over the semiconductor film; and
a sixth conductive film over the fifth conductive film,
wherein the fifth conductive film is transparent and the sixth conductive film is not transparent,
wherein the transistor uses a first portion of the fifth conductive film as one of the source electrode and the drain electrode,
wherein the fifth conductive film is included in a source line, and
wherein an entirety of the sixth conductive film overlaps with the fifth conductive film while the first portion of the fifth conductive film do not overlap with the sixth conductive film.

8. The semiconductor device according to claim 1 , wherein the first conductive film and the second conductive film are formed by etching a seventh conductive film.

9. The semiconductor device according to claim 1 , wherein the transistor is transparent such that a light passes through the transistor.

10. A semiconductor device comprising:
a first conductive film;
a third conductive film over and in contact with the first conductive film;
a first insulating film over the first conductive film and the third conductive film;
a pixel electrode over the third conductive film with the first insulating film therebetween; and
a transistor comprising a semiconductor film, a gate electrode, a source electrode, a drain electrode and a gate dielectric,
wherein the first conductive film is transparent, and the third conductive film is not transparent,
wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,
wherein the semiconductor film is an oxide comprising indium (In), gallium (Ga) and zinc (Zn),
wherein a first portion of the pixel electrode works as an upper electrode of a storage capacitor,
wherein a first portion of the first conductive film works as a lower electrode of the storage capacitor,
wherein a first portion of the first insulating film works as a dielectric of the storage capacitor,
wherein the storage capacitor is transparent such that a light passes through the storage capacitor, and
wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive film.

11. The semiconductor device according to claim 10 ,
wherein a second portion of the third conductive film is included in a capacitor line.

12. The semiconductor device according to claim 10 , wherein a second portion of the first insulating film is the gate dielectric of the transistor.

13. The semiconductor device according to claim 10 , further comprising a second insulating film provided between the first insulating film and the pixel electrode.

14. The semiconductor device according to claim 10 , wherein the semiconductor film is provided over the first insulating film.

15. The semiconductor device according to claim 10 , further comprising:
a fifth conductive film over the semiconductor film; and
a sixth conductive film over the fifth conductive film,
wherein the fifth conductive film is transparent and the sixth conductive film is not transparent,
wherein the transistor uses a first portion of the fifth conductive film as one of the source electrode and the drain electrode,
wherein the fifth conductive film is included in a source line,
wherein an entirety of the sixth conductive film overlaps with the fifth conductive film while the first portion of the fifth conductive film do not overlap with the sixth conductive film.

16. The semiconductor device according to claim 10 , wherein the first conductive film and the gate electrode are formed by etching a seventh conductive film.

17. The semiconductor device according to claim 10 , wherein the transistor is transparent such that a light passes through the transistor.

18. A semiconductor device comprising:
a first conductive film;
a third conductive film over and in contact with the first conductive film;
a first insulating film over the first conductive film and the third conductive film;
a pixel electrode over the third conductive film with the first insulating film therebetween; and
a transistor comprising a semiconductor film, a gate electrode, a source electrode and a drain electrode,
wherein the first conductive film is transparent, and the third conductive film is not transparent,
wherein one of the source electrode and the drain electrode is electrically connected with the pixel electrode,
wherein a first portion of the pixel electrode works as an upper electrode of a capacitor,
wherein a first portion of the first conductive film works as a lower electrode of the capacitor,
wherein a first portion of the first insulating film works as a dielectric of the capacitor,
wherein the capacitor is transparent such that a light passes through the capacitor, and
wherein an entirety of the third conductive film overlaps with the first conductive film while the first portion of the first conductive film does not overlap with the third conductive

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime

Classifications

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title