Organic light-emitting display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016307976-A1
Application number	US-201514977317-A
Country	US
Kind code	A1
Filing date	Dec 21, 2015
Priority date	Apr 20, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

A method of manufacturing an organic light-emitting display apparatus includes forming a semiconductor layer on a substrate; forming a gate electrode on the semiconductor layer; forming an interlayer insulating film on an entire surface of the substrate to cover the gate electrode; forming a source electrode and a drain electrode on the interlayer insulating film; and forming a pixel electrode and a pixel-defining film on the source electrode and the drain electrode, wherein the forming of the pixel electrode and the pixel-defining film includes forming the pixel electrode and the pixel-defining film by using one mask.

First claim

What is claimed is:

1 . A method of manufacturing an organic light-emitting display apparatus, the method comprising:
forming a semiconductor layer on a substrate; forming a gate electrode on the semiconductor layer; forming an interlayer insulating film on an entire surface of the substrate to cover the gate electrode; forming a source electrode and a drain electrode on the interlayer insulating film; and forming a pixel electrode and a pixel-defining film on the source electrode and the drain electrode, the forming of the pixel electrode and the pixel-defining film comprises forming the pixel electrode and the pixel-defining film by using one mask.

2 . The method of claim 1 , the pixel electrode comprising a first layer and a second layer.

3 . The method of claim 2 , the first layer being disposed under the second layer, the first layer comprises titanium (Ti) or a Ti alloy.

4 . The method of claim 2 , the first layer being disposed under the second layer, and the second layer comprising a conductive oxide.

5 . The method of claim 2 , the first layer being formed to have a thickness that is equal to or less than 300 Å.

6 . The method of claim 1 , after the forming of the source electrode and the drain electrode, the method further comprising forming red, green, and blue color filters on the interlayer insulating film.

7 . The method of claim 6 , after the forming of the red, green, and blue color filters and before the forming of the pixel electrode and the pixel-defining film, the method further comprising forming an overcoat layer on the red, green, and blue color filters.

8 . The method of claim 1 , the semiconductor layer comprising an oxide.

9 . The method of claim 1 , the forming of the pixel electrode and the pixel-defining film comprising:
forming the pixel electrode and the pixel-defining film on the entire surface of the substrate; patterning the pixel-defining film by using a half-tone mask; etching part of the second layer by using the patterned pixel-defining film as a mask; ashing the pixel-defining film; and etching part of the first layer by using the second layer as a mask.

10 . The method of claim 1 , after the forming of the pixel electrode and the pixel-defining film, the method further comprising forming an intermediate layer and a counter electrode.

11 . A method of manufacturing an organic light-emitting display apparatus, the method comprising:
forming a semiconductor layer on a substrate; forming a gate electrode on the semiconductor layer; forming an interlayer insulating film on an entire surface of the substrate to cover the gate electrode; forming a source electrode and a drain electrode on the interlayer insulating film; forming a pixel electrode comprising a first layer and a second layer on the source electrode and the drain electrode; forming a pixel-defining film on the pixel electrode; patterning the pixel-defining film by using a half-tone mask; etching part of the second layer by using the patterned pixel-defining film as a mask; ashing the pixel-defining film; and etching part of the first layer by using the second layer as a mask.

12 . The method of claim 11 , the first layer being disposed under the second layer, and the first layer comprising titanium (Ti) or a Ti alloy.

13 . The method of claim 11 , the first layer being disposed under the second layer, and the second layer comprising a conductive oxide.

14 . The method of claim 11 , the first layer being formed to have a thickness that is equal to or greater than 300 Å.

15 . The method of claim 11 , after the forming of the source electrode and the drain electrode, the method further comprising forming red, green, and blue color filters on the interlayer insulating film.

16 . The method of claim 15 , after the forming of the red, green, and blue color filters and before the forming of the pixel electrode and the pixel-defining film, the method further comprising forming an overcoat layer on the red, green, and blue color filters.

17 . The method of claim 11 , the semiconductor layer comprising an oxide.

18 . An organic light-emitting display apparatus comprising:
a substrate; a semiconductor layer that is formed on the substrate; a gate electrode that is formed on the semiconductor layer; an interlayer insulating film that is formed on an entire surface of the substrate to cover the gate electrode; a source electrode and a drain electrode that are formed on the interlayer insulating film; a pixel electrode that is formed on the source electrode and the drain electrode; and a pixel-defining film that is formed on the pixel electrode and defines a pixel region and a non-pixel region, the pixel electrode and the pixel-defining film being formed by using one mask.

19 . The organic light-emitting display apparatus of claim 18 , the pixel electrode comprising a first layer and a second layer.

20 . The organic light-emitting display apparatus of claim 19 , the first layer being formed under the second layer, and the first layer comprising titanium (Ti) or a Ti alloy.

21 . The organic light-emitting display apparatus of claim 19 , the first layer being formed under the second layer, and the second layer comprising a conductive oxide.

22 . The organic light-emitting display apparatus of claim 19 , the first layer being formed to have a thickness that is equal to or less than 300 Å.

23 . The organic light-emitting display apparatus of claim 18 , further comprising red, green, and blue color filters that are formed on the interlayer insulating film.

24 . The organic light-emitting display apparatus of claim 23 , further comprising an overcoat layer that is formed on the red, green, and blue color filters.

25 . The organic light-emitting display apparatus of claim 18 , the semiconductor layer comprising an oxide.

26 . An organic light-emitting display apparatus comprising:
a substrate; a semiconductor layer that is formed on the substrate; a gate electrode that is formed on the semiconductor layer; an interlayer insulating film that is formed on an entire surface of the substrate to cover the gate electrode; a source electrode and a drain electrode that are formed on the interlayer insulating film; a pixel electrode that is formed on the source electrode and the drain electrode and comprises a first layer and a second layer; and a pixel-defining film that is formed on the pixel electrode and defines a pixel region and a non-pixel region, the pixel electrode and the pixel-defining film being formed by using one mask, the first layer comprising a metal, and the second layer comprises a conductive oxide.

27 . An organic light-emitting display apparatus comprising:
a substrate; a semiconductor layer that is formed on the substrate; a gate electrode that is formed on the semiconductor layer; an interlayer insulating film that is formed on an entire surface of the substrate to cover the gate electrode; a source electrode and a drain electrode that are formed on the interlayer insulating film; a pixel electrode that is formed on one of the source electrode and the drain electrode; and a pixel-defining film that is formed on the pixel electrode and defines a pixel region and a non-pixel region, and a portion of the pixel-defining film at a first side of the defined pixel region ove

Assignees

• Samsung Display Co Ltd

Inventors

• You Chungi

Classifications

• H10D62/80

  characterised by the materials · CPC title

• H10K59/80517

  Multilayers, e.g. transparent multilayers · CPC title

• H10K59/122

  Pixel-defining structures or layers, e.g. banks · CPC title

• H10D86/441 Primary

  Interconnections, e.g. scanning lines · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title