Semiconductor reaction chamber with plasma capabilities
US-2015024609-A1 · Jan 22, 2015 · US
US11501956B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11501956-B2 |
| Application number | US-202016878443-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2020 |
| Priority date | Oct 12, 2012 |
| Publication date | Nov 15, 2022 |
| Grant date | Nov 15, 2022 |
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A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.
Opening claim text (preview).
What is claimed is: 1. A semiconductor tool comprising: a reaction chamber defining a processing area; a workpiece support within the reaction chamber; a showerhead for distributing at least one processing gas within the processing area; and a gas control valve assembly in fluid communication with the showerhead to control the at least one processing gas flow into the shower head; wherein the showerhead further comprises a first plurality of arcuate slots and a second plurality of arcuate slots, each of the plurality of arcuate slots having a common exit plane above a workpiece support and the first plurality of arcuate slots being concentrically aligned with the second plurality of arcuate slots, wherein the showerhead further comprises a first gas cavity in fluid communication with the first plurality of arcuate slots, and a second gas cavity in fluid communication with the second plurality of arcuate slots, and wherein the first gas cavity is at least partially defined by an upper plate, the upper plate comprising a plurality of cooling fins arranged in a plurality of concentric patterns extending outward from a central portion to control and/or reduce the temperature within the first gas cavity. 2. The semiconductor tool of claim 1 wherein the at least one process gas flows radially outward after leaving the first and second plurality of arcuate slots. 3. The semiconductor tool of claim 1 wherein each ring of the plurality of first and second arcuate slots are alternatively offset from adjacent rings of first and second arcuate slots. 4. The semiconductor tool of claim 1 further comprising a vacuum port in fluid communication with the first plurality of arcuate slots and another vacuum port in fluid communication with the second plurality of arcuate slots. 5. The semiconductor tool of claim 1 further comprising a purge port in fluid communication with the first plurality of arcuate slots and another purge port in fluid communication with the second plurality of arcuate slots. 6. The semiconductor tool of claim 5 wherein the purge ports are positioned radially outward of the plurality of first and second arcuate slots. 7. The semiconductor tool of claim 1 , further comprising a purge port in fluid communication with the first plurality of arcuate slots and a vacuum port in fluid communication with the second plurality of arcuate slots. 8. The semiconductor tool of claim 1 , further comprising a vacuum port in fluid communication with the first plurality of arcuate slots and a purge port in fluid communication with the second plurality of arcuate slots.
Nozzles for more than one gas · CPC title
Gas control, e.g. control of the gas flow · CPC title
Shower nozzles · CPC title
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