X-ray imaging in cross-section using un-cut lamella with background material

Patent metadata

Field	Value
Publication number	US-11501951-B1
Application number	US-202117320526-A
Country	US
Kind code	B1
Filing date	May 14, 2021
Priority date	May 14, 2021
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, including: forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively; depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample; generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and detecting x-rays generated while the region of interest is scanned by the charged particle beam.

First claim

What is claimed is:

1. A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, the method comprising:
forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively;
depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample;
generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and
detecting x-rays generated while the region of interest is scanned by the charged particle beam.

2. The method of claim 1 further comprising generating a two-dimensional image of the scanned region of interest based on the detected x-rays.

3. The method of claim 1 wherein the first and second side surfaces of the lamella are substantially vertical and the charged particle beam is scanned across a region of interest on the substantially vertical first side surface of the lamella.

4. The method of claim 1 wherein the background material is deposited within the trench at a level below an area of interaction between the scanned charged particle beam and the lamella.

5. The method of claim 1 wherein the SEM column and FIB column are part of a SEM-FIB evaluation tool.

6. The method of claim 1 wherein the charged particle beam is directed to collide with the first surface of the lamella at a 45 degree angle to the first surface.

7. The method of claim 1 wherein the sample comprises a semiconductor wafer.

8. A system for evaluating a region of a sample, the system comprising:
a vacuum chamber;
a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process;
a focused ion beam (FIB) column configured to direct a charged particle beam into the vacuum chamber toward the sample;
a scanning electron microscope (SEM) column configured to direct a charged particle beam into the vacuum chamber toward the sample;
a detector configured to detect x-rays generated from the collision between the charged particle beam and the sample; and
a processor and a memory coupled to the processor, the memory including a plurality of computer-readable instructions that, when executed by the processor, cause the system to:
form a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively;
deposit background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample;
generate a charged particle beam with the SEM column and scan the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and
detect x-rays generated while the region of interest is scanned by the charged particle beam.

9. The system according to claim 8 further comprising generating a two-dimensional image of the scanned region of interest based on the detected x-rays.

10. The system according to claim 8 wherein the first and second side surfaces of the lamella are substantially vertical and the charged particle beam is scanned across a region of interest on the substantially vertical first side surface of the lamella.

11. The system according to claim 8 wherein the background material is deposited within the trench at a level below an area of interaction between the scanned charged particle beam and the lamella.

12. The system according to claim 8 wherein the SEM column and FIB column are part of a SEM-FIB evaluation tool.

13. The system according to claim 8 wherein the charged particle beam is directed to collide with the first surface of the lamella at a 45 degree angle to the first surface.

14. The system according to claim 8 wherein the sample comprises a semiconductor wafer.

15. A non-transitory computer-readable memory that stores a plurality of computer-readable instructions for evaluating a region of a sample by:
forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively;
depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample;
generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and
detecting x-rays generated while the region of interest is scanned by the charged particle beam.

16. The non-transitory computer-readable memory set forth in claim 15 wherein the computer-readable instructions for evaluating a region of a sample further comprise instructions for generating a two-dimensional image of the scanned region of interest based on the detected x-rays.

17. The non-transitory computer-readable memory set forth in claim 15 the first and second side surfaces of the lamella are substantially vertical and the charged particle beam is scanned across a region of interest on the substantially vertical first side surface of the lamella.

18. The non-transitory computer-readable memory set forth in claim 15 the background material is deposited within the trench at a level below an area of interaction between the scanned charged particle beam and the lamella.

19. The method of claim 1 further comprising depositing the background material in the first trench prior to scanning the charged particle beam across the region of interest.

20. The non-transitory computer-readable memory set forth in claim 15 the charged particle beam is directed to collide with the first surface of the lamella at a 45 degree angle to the first surface.

Assignees

• Applied Materials Israel Ltd

Inventors

• Zur Yehuda
• Litman Alon

Classifications

• H01J2237/2445

  Photon detectors for X-rays, light, e.g. photomultipliers · CPC title

• H01J37/222

  Image processing arrangements associated with the tube · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• H01J2237/2561

  electron · CPC title

• G01N2223/079

  incident electron beam and measuring excited X-rays · CPC title