Integrated capacitor and method for producing the same
US-9917146-B2 · Mar 13, 2018 · US
Capacitor
US11488784B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11488784-B2 |
| Application number | US-202016998058-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 20, 2020 |
| Priority date | Apr 27, 2018 |
| Publication date | Nov 1, 2022 |
| Grant date | Nov 1, 2022 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A capacitor that includes a substrate having a main surface with at least one of a recess or a projection, a dielectric film extending along the at least one of the recess or the projection and having an equivalent oxide thickness of 600 nm or more, and a conductor film covering at least part of the dielectric film.
First claim
Opening claim text (preview).
The invention claimed is: 1. A capacitor, comprising: a substrate having a main surface with at least one of a recess or a projection; a dielectric film extending along the at least one of the recess or the projection and having an equivalent oxide thickness of 600 nm or more; and a conductor film covering at least part of the dielectric film, wherein the dielectric film is a laminated structure having two or more layers, wherein an uppermost layer in the laminated structure has a smaller residual stress than any other layer in the laminated structure, and wherein the uppermost layer in the laminated structure contains at least one component selected from the group consisting of hydrogen, water, and carbon at a content more than a content of the component in any other layer in the laminated structure. 2. The capacitor according to claim 1 , wherein there is a gap between opposed portions of the conductor film in a region thereof that extends along the at least one of the recess or the projection. 3. The capacitor according to claim 1 , wherein the laminated structure includes an oxide film, a nitride film, and an oxide film that are laminated in that order. 4. The capacitor according to claim 1 , wherein the uppermost layer in the laminated structure has a thickness larger than any other layer in the laminated structure. 5. The capacitor according to claim 4 , wherein the thickness of the uppermost layer in the laminated structure is larger than a total thickness of all other layers in the laminated structure. 6. The capacitor according to claim 1 , wherein the uppermost layer in the laminated structure is an oxide film that is not a thermal oxide film. 7. The capacitor according to claim 1 , wherein the laminated structure includes an oxide film, a nitride film, an oxide film, a nitride film, and an oxide film that are laminated in that order. 8. A capacitor comprising: a substrate having a main surface with at least one of a recess or a projection; a dielectric film extending along the at least one of the recess or the projection and having an equivalent oxide thickness of 600 nm or more; and a conductor film covering at least part of the dielectric film, wherein the dielectric film is a laminated structure having three or more layers, wherein an uppermost layer in the laminated structure has a smaller residual stress than any other layer in the laminated structure, and wherein the uppermost layer in the laminated structure contains at least one component selected from the group consisting of hydrogen, water, and carbon at a content more than a content of the component in any other layer in the laminated structure. 9. The capacitor according to claim 8 , wherein the laminated structure includes an oxide film, a nitride film, and an oxide film that are laminated in that order. 10. The capacitor according to claim 8 , wherein the uppermost layer in the laminated structure has a thickness larger than any other layer in the laminated structure. 11. The capacitor according to claim 10 , wherein the thickness of the uppermost layer in the laminated structure is larger than a total thickness of all other layers in the laminated structure. 12. The capacitor according to claim 8 , wherein the uppermost layer in the laminated structure is an oxide film that is not a thermal oxide film. 13. The capacitor according to claim 8 , wherein the laminated structure includes an oxide film, a nitride film, an oxide film, a nitride film, and an oxide film that are laminated in that order.
Assignees
Inventors
Classifications
of conductive or resistive materials · CPC title
- H01G4/33Primary
Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title
characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence) · CPC title
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US11488784B2 cover?
- A capacitor that includes a substrate having a main surface with at least one of a recess or a projection, a dielectric film extending along the at least one of the recess or the projection and having an equivalent oxide thickness of 600 nm or more, and a conductor film covering at least part of the dielectric film.
- Who is the assignee on this patent?
- Murata Manufacturing Co
- What technology area does this patent fall under?
- Primary CPC classification H01G4/33. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 01 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).