Integrated capacitor and method for producing the same

Patent metadata

Field	Value
Publication number	US-9455151-B2
Application number	US-201414549791-A
Country	US
Kind code	B2
Filing date	Nov 21, 2014
Priority date	Nov 22, 2013
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.

First claim

The invention claimed is:

1. An integrated high-voltage capacitor device structure, comprising:
a substrate with a first main surface area and an opposing second main surface area;
a first electrode terminal located at the first main surface area;
a second electrode terminal located at the second main surface area;
a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area; and
a compensation structure with a compensation layer that is integrated in the second main surface area; wherein
a ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure;
the first and second electrode terminals are arranged to receive an electric voltage;
the capacitor structure comprises a first hole structure with a first plurality of holes, a first trench structure with a first plurality of trenches, a first column structure with a first plurality of columns, or a first ring structure;
the compensation structure comprises a second hole structure with a second plurality of holes, a second trench structure with a second plurality of trenches, a second column structure with a second plurality of columns, or a ring structure; and
a layer thickness of a first section of the compensation layer is not equal to a layer thickness of a second section of the compensation layer and the compensation structure is arranged congruently to the capacitor structure.

2. The integrated high-voltage capacitor device structure according to claim 1 , wherein:
a material tension is present between the dielectric layer and the substrate and a material tension is present between the compensation layer and the substrate; and
the compensation structure is implemented to at least partly compensate, based on the material tension between the compensation layer and the substrate, the material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced.

3. The integrated high-voltage capacitor device structure according to claim 1 , wherein the surface enlargement of the first main surface area relates to an area of the capacitor structure covered by the dielectric layer, and wherein the surface enlargement of the second main surface area relates to an area of the compensation structure covered by the compensation layer.

4. An integrated high-voltage capacitor device structure comprising:
a substrate with a first main surface area and an opposing second main surface area;
a first electrode terminal located at the first main surface area;
a second electrode terminal located at the second main surface area;
a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area; and
a compensation structure with a compensation layer, wherein the compensation structure is integrated in the second main surface area; wherein
a material tension is present between the dielectric layer and the substrate and a material tension is present between the compensation layer and the substrate;
the compensation structure is implemented to at least partly compensate, based on the material tension between the compensation layer and the substrate, the material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced;
the first and second electrode terminals are arranged to receive an electric voltage;
the capacitor structure comprises a first hole structure with a first plurality of holes, a first trench structure with a first plurality of trenches, a first column structure with a first plurality of columns, or a first ring structure;
the compensation structure comprises a second hole structure with a second plurality of holes, a second trench structure with a second plurality of trenches, a second column structure with a second plurality of columns, or a ring structure; and
a layer thickness of a first section of the compensation layer is not equal to a layer thickness of a second section of the compensation layer and the compensation structure is arranged congruently to the capacitor structure.

5. The integrated high-voltage capacitor device structure according to claim 4 , wherein a ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.

6. The integrated high-voltage capacitor device structure according to claim 5 , wherein the surface enlargement of the first main surface area relates to an area of the capacitor structure covered by the dielectric layer, and wherein the surface enlargement of the second main surface area relates to an area of the compensation structure covered by the compensation layer.

7. The integrated high-voltage capacitor device structure according to claim 1 , wherein the dielectric layer comprises silicon nitride and comprises a thickness of more than 500 nm, or wherein the dielectric layer comprises an equivalent oxide thickness (EOT) of more than 280 nm.

8. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure comprises a compensation material, which is isolated from the substrate by means of the compensation layer.

9. The integrated high-voltage capacitor device structure according to claim 8 , wherein the compensation material and an electrode material in the capacitor structure comprise the same materials, or wherein the dielectric layer and the compensation layer comprise the same materials.

10. The integrated high-voltage capacitor device structure according claim 1 , wherein the first electrode terminal is arranged at the capacitor structure and a third electrode terminal is arranged at the substrate.

11. The integrated high-voltage capacitor device structure according to claim 10 , wherein the second electrode terminal is arranged at the compensation structure.

12. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure is short-circuited to the substrate.

13. The integrated high-voltage capacitor device structure according to claim 1 , wherein the capacitor structure in the first main surface area and the compensation structure in the second main surface area are arranged opposite to one another at the substrate and are implemented equally within a tolerance range.

14. An integrated high-voltage capacitor device structure, comprising:
a substrate with a first main surface area and an opposing second main surface area;
a first electrode terminal located at the first main surface area;
a second electrode terminal located at the second main surface area;
a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area; and
a compensation structure with a compensation layer that is integrated in the second main surface area; wherein
a ratio between a surface enlargement of the second main surface area effected by the compensation structure with regard to a surface of the substrate in the second main surface area when trenches or holes of the compensation structure are absent, corresponds to at least 30% of the surface enlargement of the

Assignees

• Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E V

Inventors

• Bauer Anton
• Erlbacher Tobias
• Schwarzmann Holger

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10D84/212

  of only capacitors · CPC title

• H10D84/206

  of combinations of capacitors and resistors · CPC title

• H10D88/101

  comprising components on opposite major surfaces of semiconductor substrates · CPC title

• H10D1/665

  Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors · CPC title