Integrated capacitor and method for producing the same

Patent metadata

Field	Value
Publication number	US-9917146-B2
Application number	US-201615249750-A
Country	US
Kind code	B2
Filing date	Aug 29, 2016
Priority date	Nov 22, 2013
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.

First claim

The invention claimed is:

1. An integrated high-voltage capacitor device structure, comprising:
a substrate with a first main surface area and an opposing second main surface area;
a first electrode terminal located at the first main surface area;
a second electrode terminal located at the second main surface area;
a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area; and
a compensation structure with a compensation layer that is integrated in the second main surface area; wherein
a ratio between a surface enlargement of the second main surface area effected by the compensation structure with regard to a surface of the substrate in the second main surface area when trenches or holes of the compensation structure would be absent, corresponds to at least 30% of a surface enlargement of the first main surface area effected by the capacitor structure with regard to a surface of the substrate in the first main surface area when trenches or holes of the capacitor structure would be absent:
the first and the second electrode terminals are arranged to receive electric voltages; the capacitor structure comprises a first hole structure with a first plurality of holes, a first trench structure with a first plurality of trenches, a first column structure with a first plurality of columns, or a first ring structure;
the compensation structure comprises a second hole structure with a second plurality of holes, a second trench structure with a second plurality of trenches, a second column structure with a second plurality of columns, or a second ring structure; and
a layer thickness of a first section of the compensation layer is not a same as a layer thickness of a second section of the compensation layer and the trenches or holes of the compensation structure are offset with respect to the trenches or holes of the capacitor structure.

2. The integrated high-voltage capacitor device structure according to claim 1 , wherein the integrated high-voltage capacitor device structure comprises an operating voltage of at least 600 V.

3. The integrated high-voltage capacitor device structure according to claim 1 , wherein the integrated high-voltage capacitor is formed between the first and second electrode terminal.

4. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure is formed so as to comprise an absence of through silicon vias.

5. The integrated high-voltage capacitor device according to claim 1 , wherein a diameter of the first hole structure, the first trench structure, the first column structure or the first ring structure is different from a diameter of the second hole structure, the second trench structure, the second column structure or the second ring structure.

6. The integrated high-voltage capacitor device according to claim 1 , wherein the capacitor structure and the compensation structure have different shapes and/or a different number of respective structural elements.

7. The integrated high-voltage capacitor device according to claim 1 , wherein the compensation structure comprises a capacitive effect to increase the capacitance of the integrated high-voltage capacitor device or to increase the operation voltage.

8. The integrated high-voltage capacitor device structure according to claim 1 , wherein the dielectric layer comprises silicon nitride and comprises a thickness of more than 500 nm, and wherein the dielectric layer comprises an equivalent oxide thickness (EOT) of more than 280 nm.

9. The integrated high-voltage capacitor device structure according to claim 1 , wherein a material tension is present between the dielectric layer and the substrate and wherein a material tension is present between the compensation structure and the compensation layer and the substrate, wherein the compensation structure is implemented to at least partly compensate, based on the material tension between the compensation layer and the substrate, the material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced.

10. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure comprises a compensation material which is isolated from the substrate by means of the compensation layer, wherein the compensation material and an electrode material in the capacitor structure comprise the same materials, or wherein the dielectric layer and the compensation layer comprise the same materials.

11. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure is short-circuited to the substrate.

12. The integrated high-voltage capacitor device structure according claim 1 , a third electrode terminal at the substrate, the third electrode terminal arranged to receive electric voltages.

13. The integrated high-voltage capacitor device structure according to claim 1 , wherein the capacitor structure in the first main surface area and the compensation structure in the second main surface area are arranged opposite to one another at the substrate and are implemented equally within a tolerance range.

14. The integrated high-voltage capacitor device structure according to claim 1 , wherein the compensation structure is implemented to at least partly compensate, based on a material tension between the compensation layer and the substrate, material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the material tension between the dielectric layer and the substrate is reduced.

15. The integrated high-voltage capacitor device structure according to claim 1 , wherein the surface enlargement of the first main surface area relates to the surface of the substrate in the first main surface area when the capacitor structure would be absent, and to an area of the capacitor structure covered by the dielectric layer, and wherein the surface enlargement of the second main surface area relates to the surface of the substrate in the second main surface area when the compensation structure would be absent, and to an area of the compensation structure covered by the compensation layer.

Assignees

• Fraunhofer Ges Forschung

Inventors

• Bauer Anton
• Erlbacher Tobias
• Schwarzmann Holger

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10D84/212

  of only capacitors · CPC title

• H10D84/206

  of combinations of capacitors and resistors · CPC title

• H01L28/60 Primary

  Electricity · mapped topic

• H01L27/0682

  Electricity · mapped topic