Methods and apparatus for digital material deposition onto semiconductor wafers

Patent metadata

Field	Value
Publication number	US-11487206-B2
Application number	US-201916729919-A
Country	US
Kind code	B2
Filing date	Dec 30, 2019
Priority date	Dec 30, 2019
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

First claim

What is claimed is:

1. A method of forming a microelectronic device, comprising:
providing a wafer having a first surface with a lateral perimeter, wherein lateral refers to a direction parallel to the first surface, wherein the first surface does not extend onto a curved surface of the wafer, the first surface having a coating area that does not extend to the lateral perimeter;
providing droplet-on-demand sites configured to dispense droplets of a mixture of photoresist resin and solvents onto the wafer, the mixture having a viscosity of 2 centipoise (cp) to 20 cp and having a photoresist resin content of 10 weight percent to 20 weight percent, and the mixture including propylene glycol methyl ether acetate (PGMEA) and gamma butyrolactone (GBL);
heating the wafer to a temperature in a first temperature range;
moving the wafer under the droplet-on-demand sites in a first direction while the wafer is in the first temperature range, and dispensing first discrete amounts of the mixture of photoresist resin and solvents from the droplet-on-demand sites onto the wafer to form a first photoresist sublayer of a photoresist layer on the wafer, the first photoresist sublayer being continuous, the first photoresist sublayer covering the coating area;
removing a portion of the solvents from the first photoresist sublayer while the wafer is in the first temperature range, after dispensing the first discrete amounts of the mixture of photoresist resin and solvents; and
after removing the portion of the solvents from the first photoresist sublayer, moving the wafer under the droplet-on-demand sites in a second direction that is opposite from the first direction while the wafer is in a second temperature range, and dispensing second discrete amounts of the mixture of photoresist resin and solvents from the droplet-on-demand sites onto the wafer to form a second photoresist sublayer of the photoresist layer on the first photoresist sublayer, the second photoresist sublayer being continuous, the second photoresist sublayer covering the coating area.

2. The method of claim 1 , wherein after the first discrete amounts of the mixture of photoresist resin and solvents are dispensed onto the wafer, the wafer is slowed to a stop at a deceleration rate which does not exceed 500 millimeters/second 2 (mm/s 2 ).

3. The method of claim 1 , wherein the first discrete amounts of the mixture of photoresist resin and solvents each have a volume of 10 picoliters (pL) to 50 pL, and the second discrete amounts of the mixture of photoresist resin and solvents each have a volume of 10 pL to 50 pL.

4. The method of claim 1 , wherein the first temperature range is 45° C. to 50° C., and the second temperature range is 45° C. to 50° C.

5. The method of claim 1 , wherein the first photoresist sublayer is formed to have a thickness that decreases from a first thickness at a lateral perimeter of the coating area to zero in a taper region which extends from the coating area outward by a lateral distance of 100 microns to 1 mm, wherein the first photoresist sublayer does not extend into a wafer edge exposure (WEE) region that extends inward from the lateral perimeter of the first surface by a lateral distance of 1 mm to 3 mm.

6. The method of claim 1 , wherein the mixture of photoresist resin and solvents has a surface tension of 20 dynes/centimeter (dynes/cm) to 50 dynes/cm, at 20° C. to 25° C., as measured by a dynamic surface tension measurement method.

7. The method of claim 1 , further comprising introducing an anti-drying vapor over the wafer while the droplet-on-demand sites are dispensing the mixture of the photoresist resin and the solvents onto the wafer to form the first photoresist sublayer.

8. The method of claim 6 , further comprising:
after forming the first photoresist sublayer and before forming the second photoresist sublayer, moving the wafer laterally, in a direction perpendicular to the first direction, by a first lateral distance that is less than a lateral separation between adjacent droplet-on-demand sites.

9. The method of claim 1 , further comprising measuring thickness variations of the first photoresist sublayer before forming the second photoresist sublayer.

10. The method of claim 9 , wherein dispensing the second discrete amounts of the mixture of photoresist resin and solvents is adjusted to compensate for the thickness variations.

11. The method of claim 1 , including applying ultrasonic energy to the first discrete amounts of the mixture of the photoresist resin and the solvents to break up each of the first discrete amounts into small droplets.

12. The method of claim 1 , wherein the first discrete amounts of the mixture of photoresist resin and solvents are dispensed at a first dispensing frequency, and the second discrete amounts of the mixture of photoresist resin and solvents are dispensed at a second dispensing frequency, the second dispensing frequency being different from the first dispensing frequency.

13. The method of claim 1 , wherein the first discrete amounts of the mixture of photoresist resin and solvents each have a first volume, and the second discrete amounts of the mixture of photoresist resin and solvents each have a second volume, the second volume being different from the first volume.

14. The method of claim 1 , further comprising:
exposing regions of the photoresist layer to ultraviolet (UV) light through a photomask; and
dissolving the regions of the photoresist layer that were exposed to the UV light in a developer solution, leaving the photoresist layer that was not exposed to the UV light in place on the wafer.

15. The method of claim 1 , further comprising:
exposing regions of the photoresist layer to UV light through a photomask; and
dissolving the regions of the photoresist layer that were not exposed to the UV light in a developer solution, leaving the photoresist layer that was exposed to the UV light in place on the wafer.

16. The method of claim 1 , further comprising:
patterning the photoresist layer using a photolithographic process; and
plating copper pillars on the wafer in areas exposed by the photoresist layer.

17. The method of claim 1 , further comprising:
patterning the photoresist layer using a photolithographic process; and
implanting dopants into the wafer in areas exposed by the photoresist layer.

18. The method of claim 1 , further comprising:
patterning the photoresist layer using a photolithographic process; and
etching a material layer of the wafer in areas exposed by the photoresist layer.

19. The method of claim 1 , further comprising:
after dispensing the second discrete amounts of the mixture of photoresist resin and solvents, removing a portion of the solvents from the second photoresist sublayer while the wafer is in the second temperature range;
after removing the portion of the solvents from the second photoresist sublayer, moving the wafer under the droplet-on-demand sites in the first direction while the wafer is in a third temperature range, the third temperature range being equal to the second temperature range or the first temperature range, and dispensing third discrete amounts of the mixture of photoresist resin and solvents from the droplet-on-demand sites onto the wafer to form a third photoresist sublayer of the photoresist layer on the second photoresist sublayer, the third photoresist sublayer being continuous, the third photoresist sublayer covering the coating area.

Assignees

• Texas Instruments Inc

Inventors

• Revier Daniel Lee
• Chang Sean Ping
• Cook Benjamin Stassen
• Summerfelt Scott Robert

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P30/22

  using masks · CPC title

• H10W72/012

  of bump connectors, dummy bumps or thermal bumps · CPC title

• H10W72/0198

  batch processes · CPC title