Method to improve profile control during selective etching of silicon nitride spacers

Patent metadata

Field	Value
Publication number	US-11469110-B2
Application number	US-202016821099-A
Country	US
Kind code	B2
Filing date	Mar 17, 2020
Priority date	Feb 1, 2019
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

First claim

What is claimed is:

1. A cyclic etch method, the method comprising the steps of:
i) exposing a SiN layer covering structures on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula C x H y F z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC;
ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on etch front; and
iii) repeating the steps of i) and ii) until the SiN layer covered on the etch front is removed thereby forming vertical straight SiN spacers with the SiN layer covered on the sidewalls of the structures,
wherein a pressure in the reaction chamber ranges from approximately 1 mTorr to approximately 1 Torr.

2. The cyclic etch method of claim 1 , further comprising the steps of, after the step of i),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with Ar;
pumping the reaction chamber to the vacuum; and
introducing the inert gas into the reaction chamber to generate the plasma of the inert gas.

3. The cyclic etch method of claim 2 , further comprising the steps of, after the step of ii),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with Ar;
pumping the reaction chamber to the vacuum; and
introducing the HFC into the reaction chamber to generate the plasma of the HFC.

4. The cyclic etch method of claim 1 , wherein a single or multiple RF sources are applied to generate the plasma of the HFC in the step of i) and to generate the plasma of the inert gas in the step of ii), respectively.

5. The cyclic etch method of claim 1 , wherein a single RF source is applied to generate the plasma of the HFC in the step of i) and multiple RF sources are applied to generate the plasma of the inert gas in the step of ii), and vice versa.

6. The cyclic ALE method of claim 1 , wherein the inert gas is Ar.

7. The cyclic etch method of claim 1 , wherein the HFC is C 2 H 5 F or C 3 H 7 F.

8. The cyclic etch method of claim 1 , wherein the HFC selectively etches the SiN layer over the structures.

9. The cyclic etch method of claim 1 , wherein less to no footings are formed at each corner between the vertical straight SiN spacer and the substrate.

10. The cyclic etch method of claim 1 , wherein no fluoride residuals are left on the vertical straight SiN spacers and the etch front.

11. A cyclic etch method for forming vertical straight SiN spacers, the method comprising the steps of:
i) exposing a SiN layer covering structures on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula C x H y F z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC;
ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on the etch front; and
iii) repeating the steps of i) and ii) until the SiN layer covered on the etch front is removed thereby forming the vertical straight SiN spacers with the SiN layer covered on the sidewalls of the structures,
wherein a pressure in the reaction chamber ranges from approximately 1 mTorr to approximately 1 Torr.

12. The cyclic etch method of claim 11 , wherein a single or multiple RF sources are applied to generate the plasma of the HFC in the step of i) and to generate the plasma of the inert gas in the step of ii), respectively.

13. The cyclic etch method of claim 11 , wherein a single RF source is applied to generate the plasma of the HFC in the step of i) and multiple RF sources are applied to generate the plasma of the inert gas in the step of ii), and vice versa.

14. The cyclic etch method of claim 11 , wherein the HFC is C 2 H 5 F or C 3 H 7 F.

15. The cyclic etch method of claim 11 , wherein the HFC selectively etches the SiN layer over the structures.

16. The cyclic etch method of claim 11 , wherein less to no footings are formed at each corner between the vertical straight SiN spacer and the substrate.

17. A cyclic etch method for forming vertical straight SiN gate spacers, the method comprising the steps of:
i) exposing a SiN layer covering gate stacks on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) selected from the group consisting of C 2 H 5 F and C 3 H 7 F to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer;
ii) exposing the polymer layer deposited on the SiN layer to Ar plasma, the Ar plasma removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on etch front; and
iii) repeating the steps of i) and ii) until the SiN layer covered on the etch front is removed thereby forming the vertical straight SiN gate spacers with the SiN layer covered on the sidewalls of the gate stacks,
wherein a pressure in the reaction chamber ranges from approximately 1 mTorr to approximately 1 Torr.

18. The cyclic etch method of claim 17 , wherein a single or multiple RF sources are applied to generate the plasma of the HFC in the step of i) and to generate the Ar plasma in the step of ii), respectively.

19. The cyclic etch method of claim 18 , wherein a single RF source is applied to generate the plasma of the HFC in the step of i) and multiple RF sources are applied to generate the Ar plasma in the step of ii), and vice versa.

20. The cyclic etch method of claim 18 , wherein less to no footings are formed at each corner between the SiN gate spacer and the substrate.

Assignees

• Air Liquide American

Inventors

• Guo Xiangyu
• Royer James
• Pallem Venkateswara R
• Stafford Nathan

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01L29/6653

  Electricity · mapped topic

• H01L21/31058

  Electricity · mapped topic

• H01L21/31116 Primary

  Electricity · mapped topic