Three-dimensional mask model for photolithography simulation

Patent metadata

Field	Value
Publication number	US-11461532-B2
Application number	US-202017097106-A
Country	US
Kind code	B2
Filing date	Nov 13, 2020
Priority date	Aug 14, 2007
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

First claim

What is claimed is:

1. A method comprising:
obtaining a plurality of kernels for adapting a mask design layout for a physical optical mask configured to create a pattern for optical projection onto a substrate, to a mask 3D transmission;
using the plurality of kernels with a thin mask transmission corresponding to the mask design layout to create a mask 3D transmission corresponding to the mask design layout; and
performing, based on the mask 3D transmission, or information derived therefrom, a computer simulation of optical projection of the pattern onto the substrate.

2. The method of claim 1 , wherein the kernels are independent of the layout of any particular mask.

3. The method of claim 1 , further comprising applying a filter in relation to the plurality of kernels and the mask design layout.

4. The method of claim 3 , wherein the applying the filter comprises limiting frequencies.

5. The method of claim 1 , wherein the performing the computer simulation comprises applying at least an optical model to the mask 3D transmission to create an image corresponding to the mask design layout.

6. The method of claim 1 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

7. The method of claim 1 , wherein the obtaining the plurality of kernels further comprises:
receiving a mask topography structure;
performing a rigorous simulation to simulate a near-field in relation to the mask topography structure; and
deriving the plurality of kernels from the near-field.

8. The method of claim 1 , wherein the mask 3D transmission is in a spatial domain form.

9. A non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, are configured to cause the computer system to at least:
obtain a plurality of kernels for adapting a mask design layout for a physical optical mask configured to create a pattern for optical projection onto a substrate, to a mask 3D transmission;
use the plurality of kernels with a thin mask transmission corresponding to the mask design layout to create a mask 3D transmission corresponding to the mask design layout; and
perform, based on the mask 3D transmission, or information derived therefrom, a computer simulation of optical projection of the pattern onto the substrate.

10. The computer-readable medium of claim 9 , wherein the kernels are independent of the layout of any particular mask.

11. The computer-readable medium of claim 9 , wherein the instructions are further configured to cause the computer system to apply a filter in relation to the plurality of kernels and the mask design layout.

12. The computer-readable medium of claim 11 , wherein the application of the filter comprises limiting of frequencies.

13. The computer-readable medium of claim 9 , wherein the instructions configured to cause the computer system to perform the computer simulation are further configured to cause the computer system to apply at least an optical model to the mask 3D transmission to create an image corresponding to the mask design layout.

14. The computer-readable medium of claim 9 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

15. The computer-readable medium of claim 9 , wherein the instructions configured to cause the computer system to obtain the plurality of kernels are further configured to cause the computer system to:
receive a mask topography structure;
perform a rigorous simulation to simulate a near-field in relation to the mask topography structure; and
derive the plurality of kernels from the near-field.

16. A non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, are configured to cause the computer system to at least:
apply a thin mask model to a mask design layout corresponding to a pattern for optical projection onto a substrate, to create a thin mask transmission;
apply a thick mask model to the mask design layout to generate a mask 3D residual or mask 3D transmission, the thick mask model comprising a plurality of edge-based kernels; and
perform, based on the thin mask transmission, or information derived therefrom, and on the mask 3D residual or mask 3D transmission, or information derived therefrom, a computer simulation of optical projection of the pattern onto the substrate.

17. The computer-readable medium of claim 16 , wherein the instructions are further configured to cause the computer system to apply a filter in relation to the plurality of kernels and the mask design layout.

18. The computer-readable medium of claim 17 , wherein the application of the filter comprises limiting of frequencies.

19. The computer-readable medium of claim 16 , wherein the kernels are independent of the layout of any particular mask.

20. The computer-readable medium of claim 16 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

21. The computer-readable medium of claim 16 , wherein the instructions are further configured to cause the computer system to:
receive a mask topography structure for the mask design layout;
perform a rigorous simulation to simulate a near-field; and
derive the plurality of kernels from the near-field.

Assignees

• Asml Netherlands Bv

Inventors

• Liu Peng
• Cao Yu
• Chen Luoqi
• Ye Jun

Classifications

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G06F30/337

  Design optimisation · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title