Method for manufacturing optical semiconductor device

Patent metadata

Field	Value
Publication number	US-11456576-B2
Application number	US-202016927950-A
Country	US
Kind code	B2
Filing date	Jul 13, 2020
Priority date	Oct 16, 2019
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.

First claim

What is claimed is:

1. A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration comprising steps of:
forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer,
forming a ridge stripe configuration by etching the semiconductor layer by using gas containing SiCl 4 ,
removing an oxide layer of a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed, and
removing the Si based residue whose oxide layer is removed.

2. The method for manufacturing an optical semiconductor device according to claim 1 , wherein in the step of removing the Si based residue, the Si based residue is removed by using an alkaline solution.

3. The method for manufacturing an optical semiconductor device according to claim 2 , wherein the alkaline solution is KOH solution or TMAH solution.

4. The method for manufacturing an optical semiconductor device according to claim 1 , wherein in the step of removing the Si based residue, the Si based residue is removed by performing a XeF 2 gas treatment.

5. The method for manufacturing an optical semiconductor device according to claim 1 , wherein in the step of removing the oxide layer of the Si based residue, hydrochloric acid is used to remove the oxide layer.

Assignees

• Mitsubishi Electric Corp

Inventors

• Sakuma Hitoshi
• Kishimoto Kazumasa

Classifications

• H01S5/2205

  comprising special burying or current confinement layers · CPC title

• H01S5/2081 Primary

  using special etching techniques · CPC title

• H01S5/2226 Primary

  semiconductors with a specific doping · CPC title

• H01S5/223

  Buried stripe structure {(H01S5/227 takes precedence)} · CPC title

• H01S5/2277

  double channel planar buried heterostructure [DCPBH] laser · CPC title