Method of manufacturing surface-emitting semiconductor laser element

Patent metadata

Field	Value
Publication number	US-9762030-B2
Application number	US-201615225048-A
Country	US
Kind code	B2
Filing date	Aug 1, 2016
Priority date	Sep 9, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.

First claim

What is claimed is:

1. A method of manufacturing a surface-emitting semiconductor laser element comprising:
a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror of a first conductivity type, a rough surface formation layer on the first semiconductor multilayer reflection mirror, an active region on the rough surface formation layer, a second semiconductor multilayer reflection mirror of a second conductivity type on the active region, and a current confining layer that is adjacent to the active region;
a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed;
a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure;
a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer; and
a fifth process of forming an insulating film on the region including the rough surface region.

2. The method of manufacturing a surface-emitting semiconductor laser element according to claim 1 ,
wherein, in the forming the rough surface formation layer in the first process, an Al x Ga 1-x As (0<x<1) layer with a film thickness from 110 nm to 500 nm is formed.

3. The method of manufacturing a surface-emitting semiconductor laser element according to claim 2 ,
wherein a value of x of the Al x Ga 1-x As (0<x<1) layer is such a value that is sufficient to oxidize the rough surface formation layer by a depth of equal to or greater than 110 nm from the surface in the third process.

4. The method of manufacturing a surface-emitting semiconductor laser element according to claim 2 ,
wherein the value of x of the Al x Ga 1-x As (0<x<1) layer is equal to or greater than 0.9.

5. The method of manufacturing a surface-emitting semiconductor laser element according to claim 3 ,
wherein the value of x of the Al x Ga 1-x As (0<x<1) layer is equal to or greater than 0.9.

6. The method of manufacturing a surface-emitting semiconductor laser element according to claim 2 ,
wherein, in the forming the current confining layer in the first process, an Al y Ga 1-y As (0<y≦1, y>x) layer is formed.

7. The method of manufacturing a surface-emitting semiconductor laser element according to claim 3 ,
wherein, in the forming the current confining layer in the first process, an Al y Ga 1-y As (0<y≦1, y>x) layer is formed.

8. The method of manufacturing a surface-emitting semiconductor laser element according to claim 4 ,
wherein, in the forming the current confining layer in the first process, an Al y Ga 1-y As (0<y≦1, y>x) layer is formed.

9. The method of manufacturing a surface-emitting semiconductor laser element according to claim 1 ,
wherein, in the first process, the semiconductor layer that further includes, immediately below the rough surface formation layer, an oxidation stopping layer that stops the oxidation of the rough surface formation layer is formed in the third process.

10. The method of manufacturing a surface-emitting semiconductor laser element according to claim 2 ,
wherein, in the first process, the semiconductor layer that further includes, immediately below the rough surface formation layer, an oxidation stopping layer that stops the oxidation of the rough surface formation layer is formed in the third process.

11. The method of manufacturing a surface-emitting semiconductor laser element according to claim 3 ,
wherein, in the first process, the semiconductor layer that further includes, immediately below the rough surface formation layer, an oxidation stopping layer that stops the oxidation of the rough surface formation layer is formed in the third process.

12. The method of manufacturing a surface-emitting semiconductor laser element according to claim 4 ,
wherein, in the first process, the semiconductor layer that further includes, immediately below the rough surface formation layer, an oxidation stopping layer that stops the oxidation of the rough surface formation layer is formed in the third process.

13. The method of manufacturing a surface-emitting semiconductor laser element according to claim 5 ,
wherein, in the first process, the semiconductor layer that further includes, immediately below the rough surface formation layer, an oxidation stopping layer that stops the oxidation of the rough surface formation layer is formed in the third process.

14. The method of manufacturing a surface-emitting semiconductor laser element according to claim 9 ,
wherein when λ represents an oscillation wavelength in a medium of the surface-emitting semiconductor laser element,
in forming the first semiconductor multilayer reflection mirror and the second semiconductor multilayer reflection mirror in the first process, two layers with mutually different refraction indexes and with a film thickness of λ/4 are alternately laminated, and
in forming the rough surface formation layer and the oxidation stopping layer, each layer is formed such that each film thickness or a total film thickness is an integral multiple of λ/4.

15. The method of manufacturing a surface-emitting semiconductor laser element according to claim 10 ,
wherein when λ represents an oscillation wavelength in a medium of the surface-emitting semiconductor laser element,
in forming the first semiconductor multilayer reflection mirror and the second semiconductor multilayer reflection mirror in the first process, two layers with mutually different refraction indexes and with a film thickness of λ/4 are alternately laminated, and
in forming the rough surface formation layer and the oxidation stopping layer, each layer is formed such that each film thickness or a total film thickness is an integral multiple of λ/4.

16. The method of manufacturing a surface-emitting semiconductor laser element according to claim 11 ,
wherein when λ represents an oscillation wavelength in a medium of the surface-emitting semiconductor laser element,
in forming the first semiconductor multilayer reflection mirror and the second semiconductor multilayer reflection mirror in the first process, two layers with mutually different refraction indexes and with a film thickness of λ/4 are alternately laminated, and
in forming the rough surface formation layer and the oxidation stopping layer, each layer is formed such that each film thickness or a total film thickness is an integral multiple of λ/4.

17. The method of manufacturing a surface-emitting semiconductor laser element according to claim 12 ,
wherein when λ represents an oscillation wavelength in a medium of the surface-emitting semiconductor laser element,
in forming the first semiconductor multilayer reflection mirror and the second semiconductor multilayer reflection mirror in the first process, two layers with mutually different refraction indexes and with a film thickness of λ/4 are alternately laminated, and
in forming the rough surface formation layer and the oxidation stopping layer, each layer is formed such that each film thickness or a total film thickness is an integral multiple of λ/4.

18. The method of manufacturing a surface-emitting semiconductor laser element according to claim 13 ,
wherein when λ represents an oscillation wavelength in a medium of the surface-emitting semiconductor laser element, in forming the first semiconductor multilayer reflection mirror and the se

Assignees

• Fuji Xerox Co Ltd

Inventors

• Hayakawa Junichiro
• Murakami Akemi
• Kondo Takashi
• Jogan Naoki
• Sakurai Jun

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/2081

  using special etching techniques · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• H01S5/18311 Primary

  using selective oxidation · CPC title